general description product summary v ds i d (at v gs =10v) 11.5a r ds(on) (at v gs =10v) < 0.42 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot12n30l/AOTF12N30l symbol parameter absolute maximum ratings t a =25c unless otherwise noted 350v@150 the aot12n30/AOTF12N30 is fabricated using an advanced high voltage mosfet process that is design ed to deliver high levels of performance and robustnes s in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.these parts are ideal for boos t converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backligh ting. units aot12n30 AOTF12N30 g d s AOTF12N30 top view to-220f to-220 aot12n30 symbol v ds v gs i dm i as e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc p d c/w c maximum junction-to-ambient a,d c/w 300 thermal characteristics AOTF12N30 65 0.5 v parameter drain-source voltage 300 units aot12n30 AOTF12N30 v 30 gate-source voltage continuous drain current t c =25c i d a 29 pulsed drain current c t c =100c 11.5 7.3 11.5* 7.3* aot12n30 maximum junction-to-case avalanche current c single pulsed avalanche energy g 430 parameter maximum case-to-sink a maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range derate above 25 o c t c =25c 3.8 5 power dissipation b -55 to 150 132 1 36 0.3 v/ns units a c mj w w/ o c 0.95 65 -- 3.5 c/w 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF12N30 g d s g d s
symbol min typ max units 300 350 bv dss / ? tj 0.29 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.4 4 4.5 v r ds(on) 0.31 0.42 w g fs 11 s v sd 0.74 1 v i s maximum body-diode continuous current 11.5 a i sm 29 a c iss 500 632 790 pf c oss 55 90 125 pf c rss 3 7 11 pf r g 1.3 2.7 4.1 w q g 10 12.8 16 nc q gs 4.4 nc q gd 4.3 nc t d(on) 18 ns t r 31 ns t d(off) 36 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions static drain-source on-resistance v gs =10v, i d =6a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz i dss zero gate voltage drain current v ds =300v, v gs =0v diode forward voltage v ds =5v i d =250 m a v ds =240v, t j =125c turn-off delaytime v gs =10v, v ds =150v, i d =12a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =240v, i d =12a gate source charge gate drain charge switching parameters i s =1a,v gs =0v v ds =40v, i d =6a forward transconductance zero gate voltage drain current id=250 a, v gs =0v bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time m a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c t d(off) 36 ns t f 20 ns t rr 130 170 205 ns q rr 1 1.3 1.6 m c body diode reverse recovery time i f =12a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery charge i f =12a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =3.8a, v dd =150v, r g =25 ? , starting t j =25 c 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF12N30
typical electrical and thermal characteristics 0 4 8 12 16 20 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 0 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 r ds(on) ( w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =6a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( c) figure 5:break down vs. junction temparature 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF12N30
typical electrical and thermal characteristics 0 3 6 9 12 15 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =240v i d =12a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s v ds (volts) figure 9: maximum forward biased safe operating area for aot12n30 (note f) 0 3 6 9 12 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 11: current de-rating (note b) v ds (volts) figure 10: maximum forward biased safe operating area for AOTF12N30 (note f) 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF12N30
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for AOTF12N30 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot12n30 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.95 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF12N30
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF12N30
|
