^mi-conductor ^products., una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon controlled rectifiers reverse blocking triode thyristors .. . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and mpu interface. ? center gate geometry for uniform current density ? all diffused and glass-passivated junctions for parameter uniformity and stability ? small, rugged thermowatt construction for low thermal resistance, high heat dissipation and durability ? low trigger currents, 200 (ja maximum for direct driving from integrated circuits mcr72 scrs 8 amperes rms 50 thru 800 volts maximum ratings (tj = 25c unless otherwise noted.) (to-220ab) rating peak repetitive forward and reverse blocking voltageo) (tj =-40 to 110c, 1/2 sine wave, rqk = 1kq) MCR72-2 mcr72-3 mcr72-4 mcr72-6 mcr72-8 mcr72-10 on-state rms current (tc = 83c) peak non-repetitive surge current (1/2 cycle, 60 hz, tj = -40 to 110c) circuit fusing (t = 8.3 ms) peak gate voltage (t ? 10 us) peak gate current (t s= 10 (is) peak gate power (t s; 10 us) average gate power operating junction temperature range symbol vdrm or vrrm !t(rms) !tsm |2t vgm ]gm pgm pg(av) tj value 50 100 200 . 400 600 800 8 100 40 5 1 5 0.75 -40to+110 unit volts amps amps a2s volts amp watts watts c for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ounlifv
mcr72 series maximum ratings ? continued rating storage temperature range mounting torque symbol tstg ? value -40to + 150 8 unit c in. ib. thermal characteristics characteristic thermal resistance, junction to case thermal resistance, junction to ambient symbol rejc r0ja max 2.2 60 unit c/w c/w electrical characteristics (tc = 25c, rqk = 1 kn unless otherwise noted.) characteristic peak forward or reverse blocking current 1) (vak = rated vdrm r vrrm) tj = 25c tj = 110c on-state voltage (ijm = 16 a peak, pulse width ss 1 ms, duty cycle s= 2%) gate trigger current (continuous dc)(2) (vd = 12v, r|_ = 100 2) gate trigger voltage (continuous dc) (vd = 12v, rl = 100 q) (vd = rated vdrm. rl = 1 k". tj = 110c) holding current (vd = 12v, itm = 100 ma) critical rate-of-rise of forward blocking voltage (vd = rated vdrm. tj = 110c, exponential waveform) gate controlled turn-on time (vd = rated vdrm, itm = 16 a, ig = 2 ma) symbol !drm. !rrm vtm igt vgt ih dv/dt tgt min ? ? ? ? ? 0.1 ? ? ? typ ? ? 1.7 30 0.5 ? ? 10 1 max 10 500 2 200 1.5 ? 6 ? ? unit ua ma volts ua volts ma v/us us 1. ratings apply for negative gate voltage or rgk = 1 kq. devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 2. does not include rqk current.
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