page:p2-p1 plastic-encapsulate diodes fast switching diodes features maximum ratings (ta=25 unless otherwise noted) parameter symbol value units non-repetitive peak reverse voltage 90 v dc blocking 80 v forward continuous current 225 ma average rectified output current 100 ma junction temperature 125 storage temperature --55-125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol min typ max unit conditions forward voltage 1.2 v i =100ma reverse current 0.1 a v =80 v capacitance between terminals 3 pf v =0v,f=1mhz reverse recovery time 4 ns sod-323 - + v rm v r i fm i o t j t st g v f i r c t t rr i f = 10ma r l =100 ? f f r r marking: small surface mounting type. high speed.(trr=1.2ns typ.) high reliability with high surge current handling capability. surge current (1s) i 500 ma surge v=6 v a 1SS355 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
page:p2-p2 plastic-encapsulate diodes sur ge curr ent characteristics 1 10 s u r g e c u r r e n t ( a ) 2 1 0.1 20 100 10 10 0 10 00 10000 pulse sin gle pulse forward volt age, v rever se voltage, v 1m f o r w a r d c u r r e n t , a 0 10 100 0.4 10m 100m ta=-25 c ta=75 c ta=25 c ta=125 c 1.2 0.8 for w ard characteristics 1 ta=125 c ta=75 c ta=25 c r e v e r s e c u r r e n t , a 0 1n 100n 10n 40 1 0.1 m 10 80 120 rever se characteristics 1m 0 0.1 0.2 r e v erse voltage, v r ( v ) 4 81 2 14 c t (pf) 1 2 10 ca p acitance between terminals characteristics rev ers e recovery time (ns) forward current (ma) 0 10 20 30 r ev ers e recovery time characteristics 3 1 2 v r =6v i rr = 1 /10 i r typical characteristics 1SS355 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
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