? 2009 ixys all rights reserved 1 - 5 20090929b MUBW10-06A6K ixys reserves the right to change limits, test conditions and dimensions. preliminary data converter - brake - inverter module (cbi 1) npt igbt three phase rectifer brake chopper three phase inverter v rrm = 1600 v v ces = 600 v v ces = 600 v i davm25 = 90 a i c25 = 12 a i c25 = 52 a i fsm = 300 a v ce(sat) = 2.5 v v ce(sat) = 2.5 v pin confguration see outlines. application: ac motor drives with ? input from single or three phase grid ? three phase synchronous or asynchronous motor ? electric braking operation features: ? high level of integration - only one power semiconductor module required for the whole drive ? inverter with npt igbts - low saturation voltage - positive temperature coeffcient - fast switching - short tail current ? epitaxial free wheeling diodes with hiperfast and soft reverse recovery ? industry standard package with insu lated copper base plate and soldering pins for pcb mounting ? temperature sense included package: ? ul registered ? industry standard e1-pack part name (marking on product) MUBW10-06A6K e72873
? 2009 ixys all rights reserved 2 - 5 20090929b MUBW10-06A6K ixys reserves the right to change limits, test conditions and dimensions. ouput inverter t1 - t6 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 150c 600 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 11 8 a a p tot total power dissipation t c = 25c 50 w v ce(sat) collector emitter saturation voltage i c = 10 a; v ge = 15 v t vj = 25c t vj = 125c 2.7 3.1 3.3 v v v ge(th) gate emitter threshold voltage i c = 0.2 ma; v ge = v ce t vj = 25c 4.5 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 125c 1.0 65 a ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 120 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = 1 mhz 220 pf q g(on) total gate charge v ce = 300 v; v ge = 15 v; i c = 6 a 32 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 125c v ce = 300 v; i c = 6 a v ge = 15 v; r g = 54 w 20 10 110 30 0.22 0.26 ns ns ns ns mj mj i cm reverse bias safe operating area rbsoa; v ge = 15 v; r g = 54 w l = 100 h; clamped induct. load t vj = 125c v cemax = v ces - l s di/dt 18 a t sc (scsoa) short circuit safe operating area v ce = 600 v; v ge = 15 v; t vj = 125c r g = 54 w; non-repetitive 10 s r thjc thermal resistance junction to case (per igbt) 2.75 k/w r thch thermal resistance case to heatsink (per igbt) 0.95 k/w output inverter d1 - d6 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitve reverse voltage t vj = 150c 600 v i f25 i f80 forward current t c = 25c t c = 80c 21 14 a a v f forward voltage i f = 10 a; v ge = 0 v t vj = 25c t vj = 125c 2.2 1.6 v v i rm t rr e rec(off) max. reverse recovery current reverse recovery time reverse recovery energy v r = 100 v di f /dt = -100 a/s t vj = 100c i f = 12 a; v ge = 0 v 80 tbd 4.4 a ns j r thjc thermal resistance junction to case (per diode) 2.5 k/w r thch thermal resistance case to heatsink (per diode) 0.85 k/w t c = 25c unless otherwise stated
? 2009 ixys all rights reserved 3 - 5 20090929b MUBW10-06A6K ixys reserves the right to change limits, test conditions and dimensions. brake chopper t7 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 150c 600 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 11 8 a a p tot total power dissipation t c = 25c 50 w v ce(sat) collector emitter saturation voltage i c = 10 a; v ge = 15 v t vj = 25c t vj = 125c 2.65 3.1 3.3 v v v ge(th) gate emitter threshold voltage i c = 0.2 ma; v ge = v ce t vj = 25c 4.5 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 125c 0.7 0.1 ma ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 120 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = 1 mhz 220 pf q g(on) total gate charge v ce = 300 v; v ge = 15 v; i c = 6 a 32 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 125c v ce = 300 v; i c = 6 a v ge = 15 v; r g = 54 w 20 10 110 30 0.21 0.26 ns ns ns ns mj mj i cm reverse bias safe operating area rbsoa; v ge = 15 v; r g = 54 w l = 100 h; clamped induct. load t vj = 125c v cemax = v ces - l s di/dt 18 a t sc (scsoa) short circuit safe operating area v ce = 600 v; v ge = 15 v; t vj = 125c r g = 54 w; non-repetitive 10 s r thjc thermal resistance junction to case (per igbt) 2.75 k/w r thch thermal resistance case to heatsink (per igbt) 0.9 k/w brake chopper d7 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitive reverse voltage t vj = 150c 600 v i f25 i f80 forward current t c = 25c t c = 80c 21 14 a a v f forward voltage i f = 10 a; v ge = 0 v t vj = 25c t vj = 125c 1.25 2.1 v v i r reverse current v r = v rrm t vj = 25c t vj = 125c 0.2 0.06 ma ma i rm t rr max. reverse recovery current reverse recovery time v r = 100 v; i f = 12 a di f /dt = -100 a/s t vj = 100c 3.5 80 a ns r thjc thermal resistance junction to case (per diode) 2.5 k/w r thch thermal resistance case to heatsink (per diode) 0.85 k/w t c = 25c unless otherwise stated
? 2009 ixys all rights reserved 4 - 5 20090929b MUBW10-06A6K ixys reserves the right to change limits, test conditions and dimensions. temperature sensor ntc ratings symbol defnitions conditions min. typ. max. unit r 25 b 25/85 resistance t c = 25c 4.45 4.7 3510 5.0 kw k module ratings symbol defnitions conditions min. typ. max. unit t vj t vjm t stg operating temperature max. virtual junction temperature storage temperature -40 -40 150 150 125 c c c v isol isolation voltage i isol < 1 ma; 50/60 hz 2500 v~ m d mounting torque (m4) 2.0 2.2 nm d s d a creep distance on surface strike distance through air 12.7 9.6 mm mm weight 40 g equivalent circuits for simulation ratings symbol defnitions conditions min. typ. max. unit v 0 r 0 rectifer diode d8 - d13 t vj = 125c 0.90 12 v mw v 0 r 0 igbt t1 - t6 t vj = 125c 1.4 150 v mw v 0 r 0 free wheeling diode d1 - d6 t vj = 125c 1.25 26 v mw v 0 r 0 igbt t7 t vj = 125c 1.4 150 v mw v 0 r 0 free wheeling diode d7 t vj = 125c 1.25 26 v mw i v 0 r 0 t c = 25c unless otherwise stated input rectifer bridge d8 - d13 symbol defnitions conditions maximum ratings v rrm max. repetitive reverse voltage 1600 v i fav i davm i fsm average forward current max. average dc output current max. surge forward current sine 180 t c = 80c rectangular; d = 1 / 3 ; bridge t c = 80c t = 10 ms; sine 50 hz t c = 25c 22 61 300 a a a p tot total power dissipation t c = 25c 50 w symbol conditions characteristic values min. typ. max. v f forward voltage i f = 30 a t vj = 25c t vj = 125c 1.1 1.2 1.45 v v i r reverse current v r = v rrm t vj = 25c t vj = 125c 0.3 0.01 ma ma r thjc thermal resistance junction to case (per diode) t vj = 25c 2.1 k/w r thch thermal resistance case to heatsink (per diode) 0.7 k/w
? 2009 ixys all rights reserved 5 - 5 20090929b MUBW10-06A6K ixys reserves the right to change limits, test conditions and dimensions. ordering part name marking on product delivering mode base qty ordering code standard mubw 10-06a6k MUBW10-06A6K box 10 500 087 outline drawing dimensions in mm (1 mm = 0.0394) product marking
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