to-126 plastic-encapsulate transistors d 2611 transistor (npn) feature power switching applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector -base voltage 600 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current -continuous 0.2 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 600 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 400 v emitter-base breakdown voltage v (br)ebo i e = 100 a , i c =0 7 v collector cut-off current i cbo v cb = 600v, i e =0 100 a collector cut-off current i ceo v ce = 400v, i b =0 200 a emitter cut-off current i ebo v eb =7v, i c =0 100 a h fe(1) v ce =20v, i c =20ma 10 40 dc current gain h fe(2) v ce =10v, i c = 0.25ma 5 i c = 50ma, i b = 10ma 0.5 v collector-emitter saturation voltage v ce(sat) i c = 100ma, i b = 20ma 0.6 v base-emitter saturation voltage v be(sat) i c = 50ma, i b =10ma 1.2 v transition frequency f t v ce =20v,i c =20ma f = 1mhz mhz fall time t s 0.3 s storage time t f i c =50ma, i b1 =-i b2 =5ma, v cc =45v 1.5 s classification of h fe(1) rank range 10-15 15-20 20-25 25-30 30-35 35-40 1 2 3 to-126 1. emitter 2. collector 3. base 5 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,dec,2012
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