advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v low on-resistance r ds(on) 20m fast switching i d -9.2a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice parameter drain-source voltage continuous drain current 3 -7.4 thermal data gate-source voltage continuous drain current 3 pulsed drain current 1 -50 linear derating factor storage temperature range 0.02 1 parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 ap4835gm-hf rating - 30 + 20 -9.2 halogen-free product 200812045 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-9a - - 20 m ? ?
a p4835gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g =-3.0v 0 10 20 30 40 50 0246 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c v g =-3.0v -10v -7.0v -5.0v -4.5v 0.5 0.9 1.3 1.7 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-9a v g =-10v 0 2 4 6 8 10 0.1 0.3 0.5 0.7 0.9 1.1 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 10 14 18 22 26 30 246810 -v gs , gate-to-source voltage (v) r ds(on) (m
ap4835gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge circuit 4 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 125
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