MCD200-18IO1 phase leg thyristor module 3 1 2 5 4 part number MCD200-18IO1 backside: isolated tav t vv 1.1 rrm 216 1800 = v= v i= a 2x features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability direct copper bonded al2o3-ceramic line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control y4 industry standard outline rohs compliant soldering pins for pcb mounting base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 3600 ixys reserves the right to change limits, conditions and dimensions. 20131121a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
MCD200-18IO1 v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i v i a v t 1.20 r 0.13 k/w min. 216 v v 400 t = 25c vj t = c vj ma 15 v = v t = 25c vj i = a t v t = c c 85 p tot 770 w t = 25c c 200 1800 forward voltage drop total power dissipation conditions unit 1.52 t = 25c vj 125 v t0 v 0.80 t = c vj 125 r t 1.4 m ? v 1.10 t = c vj i = a t v 200 1.50 i = a 400 i = a 400 threshold voltage slope resistance for power loss calculation only a 125 v v 1800 t = 25c vj i a 340 p gm w t = 30 s 120 max. gate power dissipation p t = c c 125 w t = 60 p p gav w 20 average gate power dissipation c j 366 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 125 i2t t = 45c value for fusing t = c 125 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 125 8.00 8.64 231.2 224.4 ka ka ka ka 6.80 7.35 320.0 310.5 1800 500 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 100 repetitive, i = t vj = 125c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v= 6 v t = c 25 (dv/dt) t=125c critical rate of rise of voltage a/s 500 v/s t = s; ia;v = ? v r = ; method 1 (linear voltage rise) vj d vj 600 a t p g =0.5 di /dt a/s; g =0.5 d drm cr v = ? v d drm gk 1000 2v t= c -40 vj i gt gate trigger current v= 6 v t = c 25 d vj 150 ma t= c -40 vj 3v 220 ma v gd gate non-trigger voltage t= c vj 0.25 v i gd gate non-trigger current 10 ma v = ? v d drm 125 latching current t= c vj 200 ma i l 25 ts p =30 ia; g = 0.5 di /dt a/s g =0.5 holding current t= c vj 150 ma i h 25 v= 6 v d r = gk gate controlled delay time t= c vj 2s t gd 25 ia; g = 0.5 di /dt a/s g =0.5 v = ? v d drm turn-off time t= c vj 200 s t q di/dt = a/s; 10 dv/dt = v/s; 50 v = r 100 v; i a; t = 300 v = ? v d drm t s p = 200 non-repet., i = 200 a t 125 r thch 0.05 thermal resistance case to heatsink k/w rectifier 1900 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage r/d reverse current, drain current t t r/d r/d 200 ixys reserves the right to change limits, conditions and dimensions. 20131121a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
MCD200-18IO1 ratings yyyyyyyyyyy yywwa circuit diagram 2d matrix part no. assembly line date code package t op c m d nm 2.75 mounting torque 2.25 t vj c 125 virtual junction temperature -40 weight g 150 symbol definition typ. max. min. conditions operation temperature unit m t nm 5.5 terminal torque 4.5 v v t = 1 second v t = 1 minute isolation voltage mm mm 14.0 10.0 16.0 16.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 300 a per terminal 100 -40 terminal to terminal y 4 delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol MCD200-18IO1 498297 box 6 MCD200-18IO1 standard 3600 isol t stg c 125 storage temperature -40 3000 threshold voltage v 0.8 m ? v 0 max r 0 max slope resistance * 0.7 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 125 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131121a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
MCD200-18IO1 123 65 0.25 30 29 5 ? 6.6 2.8 / 0.8 m6 x 16 2.2 1 2 3 34 15 12.4 94 80 7 5 63 40 17 5 4 67 optional accessories for modules keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red type zy 180l (l = left for pin pair 4/5) type zy 180r (r = right for pin pair 6/7) ul 758, style 3751 89 11 10 3 1 2 5 4 outlines y4 ixys reserves the right to change limits, conditions and dimensions. 20131121a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
MCD200-18IO1 0 25 50 75 100 125 150 t a [c] t c [c] t[ms] t[s] 0.001 0.01 0.1 1 0 2000 4000 6000 8000 0 1 1 10 4 10 5 10 6 0 25 50 75 100 125 150 0 100 200 300 400 i tsm [a] i tavm [a] 0 100 200 300 0 100 200 300 400 p tot [w] i tavm [a] 0 25 50 75 100 125 150 0 200 400 600 0 400 800 1200 1600 2000 i 2 dt [a 2 s] t vj =45c t vj =125c p tot [w] i davm [a] t a [c] fig. 1 surge overload current i tsm , i fsm : crest value, t: duration fig. 2 i 2 t versus time (1-10 ms) fig. 3 max. forward current at case temperature fig. 4 power dissipation vs. on-sta te current & ambient temperature (per thyristor or diode) fig. 5 gate trigger characteristics fig. 6 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature fig. 7 gate trigger delay time 180 sin 120 60 30 dc 0.01 0.1 1 10 1 10 100 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.1 1 10 i g [a] v g [v] i g [a] t vj =25c t gd [ s] limit typ. 50 hz 80% v rrm t vj =45c t vj =125c dc 30 60 120 180 sin r thka k/w 0.30 0.10 0.15 0.20 0.04 0.06 0.02 r thka k/w 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1: i gt ,t vj =125c 2: i gt ,t vj =25c 3: i gt ,t vj = -40c i gd ,t vj =130c 4: p gm =20w 5: p gm =60w 6: p gm =120w 1 2 3 4 5 6 thyristor ixys reserves the right to change limits, conditions and dimensions. 20131121a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
MCD200-18IO1 0.0 0.4 0.8 1.2 1.6 2.0 0 100 200 300 400 500 t[s] 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.0 0.1 0.2 0.3 0.4 z thjc [k/w] v t/f [v] i t/f [a] 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.0 0.1 0.2 0.3 z thjk [k/w] t[s] fig. 8 forward current versus voltage drop fig. 9 transient thermal impedance junction to case at various conduction angles fi g . 10 transient thermal im p edance j unction to heatsink ( p er th y ristor/diode ) dc 180 120 60 30 dc 180 120 60 30 constants for z thjc calculation: i r thi [k/w] t i [s] 1 0.0100 0.00014 2 0.0065 0.019 3 0.0250 0.180 4 0.0615 0.520 5 0.0270 1.600 rectifier ixys reserves the right to change limits, conditions and dimensions. 20131121a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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