on-state current 4 amp fs04...i sensitive gate scr these series of s ilicon c ontrolled r ectifier use a high performance pnpn technology. these parts are intended for general purpose applications where high gate sensitivity is required like small engine ignition, smps crowbar protection, food procesor. absolute maximum ratings, according to iec publication no. 134 on-state current average on-state current non-repetitive on-state current non-repetitive on-state current fusing current peak reverse gate voltage peak gate current peak gate dissipation gate dissipation operating temperature storage temperature lead temperature for soldering i t(rms) parameter conditions min. max. unit ipak (plastic) gate trigger current < 200 ? off-state voltage 200 v ?600 v symbol i t(av) i tsm i tsm i 2 t v grm i gm p gm p g(av) t j t stg t l 180?conduction angle, tc = 105 ? ta = 25 ? half cycle, q = 180 ? tc = 105 ? ta = 25 ? half cycle, 60 hz half cycle, 50 hz t = 10ms, half cycle i gr = 10 ? 20 ? max. 20 ? max. 20 ms max. 10s at 4.5mm from case 4 1.35 2.5 0.9 33 30 4.5 8 -40 -40 a a a a a 2 s v a w w ? ? ? 1.2 3 0.2 +125 +150 260 jun - 02 k a g a repetitive peak off state voltage parameter conditions voltage unit symbol v drm v rrm r gk = 1 k w b 200 v d 400 m 600
fs04...i sensitive gate scr electrical characteristics gate trigger current off-state leakage current on-state voltage gate trigger voltage gate non trigger voltage holding current latching current parameter conditions sensitivity unit symbol i gt i drm v d = 12 v dc , r l = 33 w , t j = 25 ? 01 1 20 ? 04 15 50 02 200 03 20 200 1 5 1.6 0.8 0.1 5 6 10 10 5 10 ma ? v v v ma ma v/? min max max max max max min max max min min 50 7.5 100 a/? / i rrm v tm v gt i h i l dv / dt di / dt critical rate of voltage rise critical rate of current rise v d = v drm , r gk = 220 w , t j = 125 ? t j = 25 ? v r = v rrm , at i t = 8 amp, tp = 380 ?, t j = 25 ? v d = 12 v dc , r l = 33 w , t j = 25 ? i t = 50 ma , r gk = 1k w , t j = 25 ? i g = 1 ma , r gk = 1k w , t j = 25 ? v d = 0.67 x v drm , r gk = 220 w , t j = 125 ? part number information jun - 02 ?/w r th(j-a) thermal resistance junction-ambient ?/w r th(j-c) thermal resistance junction-case for dc fagor scr current case voltage sensitivity f s 04 01 b i 00 forming tu packaging tr 100 ns, f = 60 hz, t j = 125 ? i g = 2 x i gt v gd v d = v drm , r l = 3.3k w , t j = 125 ? r gk = 220 w ,
fs04...i sensitive gate scr 0 5 4 3 2 1 0 0.5 1 1.5 2 p (w) fig. 1: maximum average power dissipation versus average on-state current 0 20 5 4 3 2 1 0 40 60 80 100 120 140 p (w) fig. 2: correlation between maximum average power dissipation and maximum allowable temperature (tamb and t case). t case (?) 85 95 105 115 125 fig. 3: average on-state current versus case temperature fig. 5: relative variation of gate trigger current and holding current versus junction temperature. 1 10 100 1000 fig. 6: non repetitive surge peak on-state current versus number of cycles. 35 30 25 20 15 10 5 0 i tsm (a) tj initial = 25 c 1.00 0.10 0.01 zth(j-a) / rth(j-a) fig. 4: relative variation of thermal impedance junction to ambient versus pulse duration. 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 jun- 02 rth (j-a) 2.5 3 3.5 tamb ( c) number of cycles tp (s) i t(av) (a) 4 a 360 rth (j-c) a = 80 i t(av) (a) t case (?) 5 4 3 2 1 0 0 25 50 75 100 125 a = 180 d.c. i gt , i h (tj) / i gt , i h (tj = 25 ?) tj (?) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 20 60 80 100 0 40 120 140 ih & il igt
fs04...i jun - 02 sensitive gate scr i tsm (a). i 2 t (a 2 s) fig. 7: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp 10 ms, and corresponding value of i 2 t. 100 10 1 1 10 tj initial = 25 ? tp(ms) i tsm i 2 t fig. 8: on-state characteristics (maximum values). 100 10 1 i tm (a) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 tj max tj initial 25 c v tm (v) tj max vto = 0.95 v rt = 0.100 w package mechanical data ipak to 251-aa marking: type number weight: 0.2 g
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