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  june 2012 ?2012 fairchild semiconductor corporation FDMC8588 rev.d3 www.fairchildsemi.com 1 FDMC8588 n-channel powertrench ? mosfet FDMC8588 n-channel powertrench ? mosfet 25 v, 40 a, 5.7 m features ? max r ds(on) = 5.7 m at v gs = 4.5 v, i d = 16.5 a ? state-of-the-art switching performance ? lower output capacitance, gate resistance, and gate charge boost efficiency ? shielded gate technology reduces switch node ringing and increases immunity to emi and cross conduction ? rohs compliant general description this n-channel mosfet ha s been designed specifically to improve the overall efficiency and to minimize switch node ringing of dc/dc converters using either synchronous or conventional switching pwm c ontrollers. it has been optimized for low gate charge, low r ds(on) , fast switching speed and body diode reverse recovery performance. applications ? high side switching for high end computing ? high power density dc-dc synchronous buck converter s s s g d d d d top power 33 bottom d d d d s s s g pin 1 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage (note 5) 25 v v gs gate to source voltage (note 4) 12 v i d drain current - continuous (package limited) t c = 25 c 40 a - continuous (silicon limited) t c = 25 c 59 - continuous (note 1a) 16.5 - pulsed 60 e as single pulse avalanche energy (note 3) 29 mj p d power dissipation t c = 25 c 26 w power dissipation t a = 25 c (note 1a) 2.4 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case t c = 25 c 4.7 c/w r ja thermal resistance, junction to ambient t a = 25 c (note 1a) 53 device marking device package reel size tape width quantity 08od FDMC8588 power 33 13 ?? 12 mm 3000 units
www.fairchildsemi.com 2 ?2012 fairchild semiconductor corporation FDMC8588 rev.d3 FDMC8588 n-channel powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics notes: symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a , v gs = 0 v 25 v bv dss t j breakdown voltage temperature coefficient i d = 250 a , referenced to 25 c 17 mv/c i dss zero gate voltage drain current v ds = 20 v, v gs = 0 v 1 a i gss gate to source leakage current, forward v gs = 12 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 0.8 1.4 1.8 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a , referenced to 25 c -4 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 17 a 3.5 5.0 m v gs = 4.5 v, i d = 16.5 a 4.3 5.7 v gs = 10 v, i d = 17 a,t j = 125 c 4.8 6.9 g fs forward transconductance v dd = 5 v, i d = 16.5 a 85 s c iss input capacitance v ds = 13 v, v gs = 0 v, f = 1 mhz 1228 pf c oss output capacitance 441 pf c rss reverse transfer capacitance 69 pf r g gate resistance 0.5 t d(on) turn-on delay time v dd = 13 v, i d = 16.5a, v gs = 10 v, r gen = 6 8ns t r rise time 3ns t d(off) turn-off delay time 25 ns t f fall time 2ns q g(tot) total gate charge at 4.5v v dd = 13 v, i d = 16.5 a 12 nc q gs total gate charge 3.0 nc q gd gate to drain ?miller? charge 3.3 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2 a (note 2) 0.7 1.2 v v gs = 0 v, i s = 16.5 a (note 2) 0.8 1.2 v t rr reverse recovery time i f = 16.5 a, di/dt = 100 a/ s 25 ns q rr reverse recovery charge 10 nc 1. r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 29 mj is based on starting t j = 25 c, l = 1.2 mh, i as = 7 a, v dd = 23 v, v gs = 10v. 100% tested at l = 0.1 mh, i as = 16 a. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. 5. the continuous vds rating is 25v; however, a pulse of 28 v peak voltage for no longer than 3ns duration at 500khz frequency can be applied. 53 c/w when mounted on a 1 in 2 pad of 2 oz copper a. 125 c/w when mounted on a minimum pad of 2 oz copper b. g df ds sf ss g df ds sf ss
www.fairchildsemi.com 3 ?2012 fairchild semiconductor corporation FDMC8588 rev.d3 FDMC8588 n-channel powertrench ? mosfet typical characteristics t j = 25c unless otherwise noted figure 1. 0.0 0.2 0.4 0.6 0 10 20 30 40 50 60 v gs = 2.5 v v gs = 3 v v gs = 4 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 102030405060 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 4 v v gs = 3 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 2.5 v v gs = 4.5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs. drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 16.5 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs. junction temperature figure 4. 0246810 0 5 10 15 20 t j = 125 o c i d = 16.5 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s . g a t e t o source voltage figure 5. transfer characteristics 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.2 0.1 1 10 60 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs. source current
www.fairchildsemi.com 4 ?2012 fairchild semiconductor corporation FDMC8588 rev.d3 FDMC8588 n-channel powertrench ? mosfet figure 7. 024681012 0.0 0.9 1.8 2.7 3.6 4.5 i d = 16.5 a v dd = 15 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 13 v gate charge characteristics figure 8. 0.1 1 10 30 30 100 1000 3000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s . d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1 10 50 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 10 20 30 40 50 60 70 limited by package v gs = 4.5 v r t jc = 4.7 o c/w v gs = 10 v i d , drain current (a) t c , c ase temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs. case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100200 0.01 0.1 1 10 100 100 p s 10 ms 10 s 100 ms dc 1 s 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 1000 0.5 1 10 100 1000 single pulse r t ja = 125 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
www.fairchildsemi.com 5 ?2012 fairchild semiconductor corporation FDMC8588 rev.d3 FDMC8588 n-channel powertrench ? mosfet figure 13. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 1000 5e-4 1e-3 0.01 0.1 1 2 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25c unless otherwise noted
www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation FDMC8588 rev.d3 FDMC8588 n-channel powertrench ? mosfet dimensional outline and pad layout detail a scal e: 2 x 8 1 5 4 4 1 85 land pattern recommendation 14 85 pkg c l pkg l c pkg l c l c sym see detail a notes: unless otherwise specified a) package standard reference: jedec mo-240, issue a, var. ba, d ated october 2002. b) all d imensions are in millimeters. c) dimensions do not include burrs or mold flash. mold flash or burrs does not exceed 0.10mm. d) dimensioning and tolerancing per asme y14.5m-1994. e) it is recommended to have no traces or vias within the keep out area. f) drawing file name: pqfn08brev2 seating plane 3.40 3.20 a b 3.40 3.20 2.37 min (0.45) (0.40) (0.65) 2.15 min 0.70 min 0.42 min 0.65 1.95 0.65 1.95 0.37 0.27 0.10 c a b 0.50 0.30 (1.65) 2.09 1.89 (2.27) 0.52 (0.39) (0.67) (0.20) 1.00 0.85 0.10 c 0.08 c 0.23 0.18 0.05 0.00 c keep out area 3.40 1.70
FDMC8588 n-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FDMC8588 rev.d3 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life su pport device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product developm ent. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experi ence many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 ?


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