copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 4.0 features high ruggedness r ds( on ) (max 1.15 ? )@v gs =10v gate charge ( typ 13nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply. n - channel to - 220f/ i - pak/d - pak mosfet absolute maximum ratings symbol parameter value unit to - 220f to - 251 to - 252 v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 4* a continuous drain current (@t c =100 o c) 2.5* a i dm drain current pulsed (note 1) 16 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 50 mj e ar repetitive avalanche energy (note 1) 5 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 23.5 106.4 101.4 w derating factor above 25 o c 0.19 0.85 0.81 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 220f to - 251 to - 252 r thjc thermal resistance, junction to case 5.31 1.18 1.23 o c /w r thcs thermal resistance, case to sink o c/w r thja thermal resistance, junction to ambient 49.5 82.8 84.9 o c /w 1/6 *. drain current is limited by junction temperature. bv dss : 600v i d : 4a r ds(on) : 1.15 ? 1 2 3 1. gate 2. drain 3. source to - 251 SW4N60K samwin 1 2 3 order codes item sales type marking package packaging 1 sw f 4n60 SW4N60K to - 220f tube 2 sw i 4n60 SW4N60K to - 251 tube 3 sw d 4n60 SW4N60K to - 252 reel to - 220f to - 252 1 2 3 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 4.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.55 v/ o c i dss drain to source leakage current v ds =600v, v gs =0v 1 ua v ds =480v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na v gs = - 30v, v ds =0v - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 3 5 v r ds(on) drain to source on state resistance v gs =10v, i d = 2a 0.98 1.15 ? g fs forward transconductance v ds = 20 v, i d = 2 a 2.4 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 382 pf c oss output capacitance 290 c rss reverse transfer capacitance 9 t d(on) turn on delay time v ds =300v, i d =4a, r g =25? (note 4,5) 10 ns tr rising time 25 t d(off) turn off delay time 25 t f fall time 22 q g total gate charge v ds =480v, v gs =10v, i d =4a (note 4,5) 13 nc q gs gate - source charge 3 q gd gate - drain charge 6.5 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 4 a i sm pulsed source current 16 a v sd diode forward voltage drop. i s =3.5a, v gs =0v 1.2 v t rr reverse recovery time i s =4a, v gs =0v, di f / dt =100a/us 207 ns q rr reverse recovery charge 1.6 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 25mh, i as =2a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 4a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature. SW4N60K samwin 2/6
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 4.0 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics 3/6 SW4N60K samwin fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 4.0 4/6 SW4N60K samwin fig. 7 . maximum safe operating area to - 220f fig. 8 . transient thermal response curve to - 220f fig. 9. maximum safe operating area to - 251 fig. 10. transient thermal response curve to - 251 fig. 11. maximum safe operating area to - 252 fig. 12. transient thermal response curve to - 252
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 4.0 v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 14. gate charge test circuit & waveform fig. 15 . switching time test circuit & waveform 5/6 SW4N60K samwin v ds same type as dut dut v gs 0.8ma q g q gs q gd v gs charge nc 10v fig. 13. c apacitance characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 4.0 fig. 17 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd SW4N60K samwin 6/6 fig. 16 . unclamped inductive switching test circuit & waveform
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