Part Number Hot Search : 
HD1075R MHO63FBD ECG55 X76F640H PCD3755F AV1085D HDC12CA 2N6975
Product Description
Full Text Search
 

To Download SW4N60D Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 features high ruggedness r ds( on ) (max 2.2 ? )@v gs =10v gate charge ( typ 18nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply. n - channel to - 220f/ i - pakn/d - pak mosfet absolute maximum ratings symbol parameter value unit to - 220f to - 251n to - 252 v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 4* a continuous drain current (@t c =100 o c) 2.5* a i dm drain current pulsed (note 1) 16 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 184 mj e ar repetitive avalanche energy (note 1) 55 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 23.5 152.6 141.0 w derating factor above 25 o c 0.19 1.22 1.13 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 220f to - 251n to - 252 r thjc thermal resistance, junction to case 5.31 0.82 0.89 o c/w r thcs thermal resistance, case to sink o c/w r thja thermal resistance, junction to ambient 47.1 83.5 79.0 o c/w 1/6 *. drain current is limited by junction temperature. bv dss : 600v i d : 4a r ds(on) : 2.2 ? 1 2 3 1. gate 2. drain 3. source to - 251n SW4N60D samwin 1 2 3 order codes item sales type marking package packaging 1 sw f 4n60 SW4N60D to - 220f tube 2 sw i 4n60 SW4N60D to - 251n tube 3 sw d 4n60 SW4N60D to - 252 reel to - 220f to - 252 1 2 3 1 2 3
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.47 v/ o c i dss drain to source leakage current v ds =600v, v gs =0v 1 ua v ds =480v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v 100 na v gs = - 30v, v ds =0v - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.5 4.5 v r ds(on) drain to source on state resistance v gs =10v, i d = 2a 1.9 2.2 ? g fs forward transconductance v ds = 30 v, i d = 2 a 3.5 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 522 pf c oss output capacitance 57 c rss reverse transfer capacitance 49 t d(on) turn on delay time v ds =300v, i d =4a, r g =25? (note 4,5) 10 ns tr rising time 25 t d(off) turn off delay time 37 t f fall time 25 q g total gate charge v ds =480v, v gs =10v, i d =4a (note 4,5) 18 nc q gs gate - source charge 3 q gd gate - drain charge 9 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 4 a i sm pulsed source current 16 a v sd diode forward voltage drop. i s =4a, v gs =0v 1.5 v t rr reverse recovery time i s =4a, v gs =0v, di f /dt=100a/us 233 ns q rr reverse recovery charge 1.6 uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 22.8mh, i as = 4a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 4a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature. SW4N60D samwin 2/6
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics 3/6 SW4N60D samwin fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 4/6 SW4N60D samwin fig. 7 . maximum safe operating area to - 220f fig. 8 . transient thermal response curve to - 220f fig. 9. maximum safe operating area to - 251n fig. 10. transient thermal response curve to - 251n fig. 11. maximum safe operating area to - 252 fig. 12. transient thermal response curve to - 252
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 14. gate charge test circuit & waveform fig. 15 . switching time test circuit & waveform 5/6 SW4N60D samwin v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge nc 10v fig. 13. c apacitance characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 2.0 fig. 17 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd SW4N60D samwin 6/6 fig. 16 . unclamped inductive switching test circuit & waveform


▲Up To Search▲   

 
Price & Availability of SW4N60D

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X