? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c5a i dm t c = 25 c, pulse width limited by t jm 10 a i a t c = 25 c5a e as t c = 25 c 300 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220,to-247) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds99923(07/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 250 a 3.0 6.0 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 10 a v gs = 0v t j = 125 c 750 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 2.8 polar tm power mosfet hiperfet tm n-channel enhancement mode avalanche rated fast intrinsic diode ixfa5n100p IXFH5N100P ixfp5n100p v dss = 1000v i d25 = 5a r ds(on) 2.8 features z international standard packages z dynamic dv/dt rating z avalanche rated z low r ds(on) , rugged polar tm process z low q g z low drain-to-tab capacitance z low package inductance advantages z easy to mount z space savings applications: z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z uninterrupted power supplies z ac motor control z high speed power switching applications preliminary technical information g = gate d = drain s = source tab = drain to-220 (i xfp ) g (tab) d s (tab) to-247 (i xfh ) g d s g s to-263 (i xfa ) (tab) www..net
ixys reserves the right to change limits, test conditions, and dimensions. ixfa5n100p IXFH5N100P ixfp5n100p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 2.4 4.0 s r gi gate input resistance 1.6 c iss 1830 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 113 pf c rss 20 pf t d(on) 12 ns t r 13 ns t d(off) 30 ns t f 37 ns q g(on) 33.4 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 10.6 nc q gd 14.4 nc r thjc 0.50 c/w r thcs (to-220) 0.50 c/w r thcs (to-247) 0.25 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 5 a i sm repetitive, pulse width limited by t jm 20 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 200 ns i rm 7.4 a q rm 0.43 c note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 i f = 5a, v gs = 0v -di/dt = 100a/ s v r = 100v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 5 (external) pins: 1 - gate 2 - drain to-220 (ixfp) outline to-247 (ixfh) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-263 (ixfa) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. www..net
? 2008 ixys corporation, all rights reserved ixfa5n100p IXFH5N100P ixfp5n100p fig. 1. output characteristics @ 25oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 02468101214 v ds - volts i d - amperes v gs = 10v 8v 7 v 5 v 6 v fig. 2. extended output characteristics @ 25oc 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 8v 7 v 6 v fig. 3. output characteristics @ 125oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 036912151821242730 v ds - volts i d - amperes v gs = 10v 8v 5 v 7v 6v fig. 4. r ds(on) normalized to i d = 2.5a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 5a i d = 2.5a fig. 5. r ds(on) normalized to i d = 2.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 012345678 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes www..net
ixys reserves the right to change limits, test conditions, and dimensions. ixfa5n100p IXFH5N100P ixfp5n100p fig. 7. input admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.00.51.01.52.02.53.03.54.04.5 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 14 16 0.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 24 28 32 q g - nanocoulombs v gs - volts v ds = 500v i d = 2.5a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_5n100p(55-744)6-27-08 www..net
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