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? IRGP4078DPBF irgp4078d-ep 1 www.irf.com ? 2012 international rectifier january 8, 2013 IRGP4078DPBF to-247ac g c e g ? g c e g irgp4078d-ep to-247ad g c e gate collector emitter base part number package type standard pack orderable part number form quantity IRGP4078DPBF to-247ac tube 25 IRGP4078DPBF irgp4078d-epbf to-247ad tube 25 irgp4078d-epbf v ces = 600v i nominal = 50a t j(max) = 175c v ce(on) typ. = 1.9v e g n-channel c ? ? insulated gate bipolar transis tor with ultra-low vf diode for induction heating and so ft switching applications features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175c ? 5 s short circuit soa ? square rbsoa ? 100% of the parts tested for i lm ? ? positive v ce (on) temperature co-efficient ? ultra-low vf hyperfast diode ? tight parameter distribution benefits ? device optimized for induction heating and soft switching applications ? high efficiency due to low v ce(on) , low switching losses and ultra-low v f ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi absolute maximum ratings ?? parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 74 i c @ t c = 100c continuous collector current 50 i cm pulse collector current, v ge = 15v 150 i lm clamped inductive load current, v ge = 20v ? 200 a i f @ t c = 25c diode continuous forward current 44 i fsm @ t c = 25c diode non repetitive p eak surge current @ t j = 25c ?? 120 i frm @tc = 100c diode repetitive peak forward current at tp=10s ?? 79 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 278 w p d @ t c = 100c maximum power dissipation 139 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) i f @ t c = 100c diode continuous forward current 25
? IRGP4078DPBF/ep 2 www.irf.com ? 2012 international rectifier january 8, 2013 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.45 ? v/c v ge = 0v, i c = 1ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.9 2.2 v i c = 50a, v ge = 15v, t j = 25c ? 2.5 ? i c = 50a, v ge = 15v, t j = 150c ?? ? 2.6 ? i c = 50a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 1.0ma gfe forward transconductance ? 26 ? s v ce = 50v, i c = 50a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 80 a v ge = 0v, v ce = 600v ?? ? 600 ? v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 1.17 1.30 v i f = 25a ? 1.06 ? i f = 25a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 61 92 i c = 50a q ge gate-to-emitter charge (turn-on) ? 20 30 nc ? v ge = 15v q gc gate-to-collector charge (turn-on) ? 22 33 ? v cc = 300v e off turn-off switching loss ? 1.1 1.4 mj i c = 50a, v cc = 400v, v ge = 15v r g = 10 ? , l = 210h, t j = 25c t d(off) turn-off delay time ? 116 ? ns ? energy losses include tail & diode ? t f fall time ? 33 ? ? reverse recovery e off turn-off switching loss ? 1.5 ? mj i c = 50a, v cc = 400v, v ge =15v r g = 10 ? , l = 210h, t j = 175c t d(off) turn-off delay time ? 113 ? ns energy losses include tail & diode ? t f fall time ? 54 ? ? reverse recovery c ies input capacitance ? 2105 ? v ge = 0v c oes output capacitance ? 131 ? pf v cc = 30v c res reverse transfer capacitance ? 59 ? f = 1.0mhz t j = 175c, i c = 200a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 10 ? , v ge = +20v to 0v scsoa short circuit safe operating area 5 ? ? s v cc = 400v, vp 600v rg = 10 ? , v ge = +15v to 0v notes: ? v cc = 80% (v ces ), v ge = 20v, l = 23h, r g = 10 ? . ? pulse width limited by max. junction temperature. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? fsw = 20khz, refer to figure 19. ? r ? is measured at t j of approximately 90c. ? sinusoidal half wave, t = 10ms. thermal resistance ??? parameter min. typ. max. units r jc (igbt) thermal resistance juncti on-to-case-(each igbt) ??? ??? 0.54 r jc (diode) thermal resistance juncti on-to-case-(each diode) ??? ??? 2.55 c/w r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40
? IRGP4078DPBF/ep 3 www.irf.com ? 2012 international rectifier january 8, 2013 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 5 - typ. igbt output characteristics t j = 25c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 4 - typ. igbt output characteristics t j = -40c; tp = 20s 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 i c ( a ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 1 - maximum dc collector current vs. case temperature fig. 3 - reverse bias soa t j = 150c; v ge = 20v 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 300 p t o t ( w ) fig. 2 - power dissipation vs. case temperature fig. 6 - typ. igbt output characteristics t j = 175c; tp = 20s
? IRGP4078DPBF/ep 4 www.irf.com ? 2012 international rectifier january 8, 2013 4 6 8 10 12 14 16 18 20 v ge (v) 0 50 100 150 200 250 300 350 i c e ( a ) t j = 175c t j = 25c fig. 11 - typ. transfer characteristics v ce = 50v; tp = 20s 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a fig. 9 - typical v ce vs. v ge t j = 25c 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a 10 20 30 40 50 60 70 80 90 100 i c (a) 0 1000 2000 3000 4000 5000 e n e r g y ( j ) e off fig. 10 - typical v ce vs. v ge t j = 175c 5101520 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a fig. 8 - typical v ce vs. v ge t j = -40c fig. 12 - typ. energy loss vs. i c t j = 175c; l = 210mh; v ce = 400v, r g = 10 ? ; v ge = 15v 0.0 1.0 2.0 3.0 v f (v) 1 10 100 1000 i f ( a ) -40c 25c 175c fig. 7 - typ. diode forward voltage drop characteristics
? IRGP4078DPBF/ep 5 www.irf.com ? 2012 international rectifier january 8, 2013 0 20 40 60 80 100 rg ( ? ) 1000 2000 3000 4000 5000 e n e r g y ( j ) e off 8 1012141618 v ge (v) 4 8 12 16 20 t i m e ( s ) 70 140 210 280 350 c u r r e n t ( a ) t sc i sc fig. 14 - typ. energy loss vs. r g t j = 175c; l = 210mh; v ce = 400v, i ce = 50a; v ge = 15v 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 10203040506070 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 18 - typical gate charge vs. v ge i ce = 50a 0 20 40 60 80 100 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) td off t f fig. 15 - typ. switching time vs. r g t j = 175c; l = 210mh; v ce = 400v, i ce = 50a; v ge = 15v 0 20 40 60 80 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) td off t f fig. 13 - typ. switching time vs. i c t j = 175c; l = 210mh; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 16 - v ge vs. short circuit v cc = 400v; t c = 25c
? IRGP4078DPBF/ep 6 www.irf.com ? 2012 international rectifier january 8, 2013 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 21. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? i (sec) ? 0.011823 0.000009 0.150739 0.000142 0.223153 0.002294 0.153695 0.014121 fig 22. maximum transient thermal impedance, junction-to-case (diode) ri (c/w) ? i (sec) ? 0.073136 0.000027 0.471726 0.000218 1.318881 0.002656 0.686257 0.026124 25 50 75 100 125 150 175 case temperature (c) 0 20 40 60 80 100 120 140 r e p e t i t i v e p e a k c u r r e n t ( a ) d= 0.5 d= 0.2 d= 0.1 fig. 19 - maximum diode repetitive forward peak current vs. case temperature 25 50 75 100 125 150 175 t j , temperature (c) 2.0 3.0 4.0 5.0 6.0 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e ( n o r m a l i z e d ) i c = 1.0ma fig. 20 - typical gate threshold voltage (normalized) vs. junction temperature ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 t = 50us t square pulse, f = 20khz d = t/t
? IRGP4078DPBF/ep 7 www.irf.com ? 2012 international rectifier january 8, 2013 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.4 - switching loss circuit g force c sense 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.5 - bvces filter circuit fig.c.t.3 - s.c. soa circuit dc 4x dut vcc
? IRGP4078DPBF/ep 8 www.irf.com ? 2012 international rectifier january 8, 2013 -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -3 -0.5 2 4.5 7 i ce (a) v ce (v) time(s) 90% i ce 5% v ce 10% i ce eoff loss tf fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 -100 0 100 200 300 400 500 -5 0 5 10 ice (a) vce (v) time (s) vce ice
? IRGP4078DPBF/ep 9 www.irf.com ? 2012 international rectifier january 8, 2013 to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
? IRGP4078DPBF/ep 10 www.irf.com ? 2012 international rectifier january 8, 2013 to-247ad package outline dimensions are shown in millimeters (inches) to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in th e assem bly lin e "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part num ber date code in t e r n a t io n a l r e c t if ie r lo g o 035h 5 6 5 7 w eek 35 lin e h lo t co de n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application.
? IRGP4078DPBF/ep 11 www.irf.com ? 2012 international rectifier january 8, 2013 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial ? (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes to-247ad n/a ? qualification standards can be found at international rectifier?s web site: h ttp://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release.

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