2002. 4. 1 1/2 semiconductor technical data kdr521t schottky barrier type diode revision no : 1 high frequency rectification. switching regulators, converters, choppers. features low forward voltage : v f max=0.45v. low leakage current : i r max=200 a. maximum rating (ta=25 ) dim millimeters a b d e tsm 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k 0.60 l 0.55 a f g g d k k b e c l h j j i 2 1 3 + _ + _ + _ + _ + _ 1. nc 2. anode 3. cathode 21 3 electrical characteristics (ta=25 ) type name marking lot no. t 2 characteristic symbol rating unit repetitive peak reverse voltage v rrm 25 v reverse voltage v r 20 v average forward current i o 1.0 a non-repetitive peak surge current i fsm 3 a junction temperature t j 125 storage temperature range t stg -55 125 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =1.0a - 0.4 0.45 v reverse current i r v r =20v - - 200 a
2002. 4. 1 2/2 kdr521t revision no : 1
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