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savantic semiconductor product specification silicon npn power transistors 2SC3256 description with to-3pn package fast switching speed low saturation voltage applications 60v/15a high-speed switching applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i cp collector current-peak 20 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3256 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;r be = 8 60 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 80 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 5 v v ce (sat) collector-emitter saturation voltage i c =7.5a; i b =0.375a 0.4 v i cbo collector cut-off current v cb =40v; i e =0 100 a i ebo emitter cut-off current v eb =4v; i c =0 100 a h fe dc current gain i c =1a ; v ce =2v 70 280 f t transition frequency i c =1a ; v ce =5v 100 mhz switching times t on turn-on time 0.1 s t s storage time 0.5 s t f fall time i c =6a; i b1 =0.3a;i b2 =-0.3a v cc =20v 0.1 s h fe classifications q r s 70-140 100-200 140-280 savantic semiconductor product specification 3 silicon npn power transistors 2SC3256 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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