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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. january 2013 doc id 023150 rev 2 1/12 12 STL6N2VH5 n-channel 20 v, 0.025 typ., 6 a stripfet? v power mosfet in powerflat? 2x2 package datasheet ? preliminary data features very low switching gate charge very low thermal resistance conduction losses reduced switching losses reduced 2.5 v gate drive very low threshold device applications switching applications description this device is an n-channel power mosfet developed using stmicroelectronics? stripfet?v technology. the device has been optimized to achieve very low on-state resistance, contributing to an fom that is among the best in its class. figure 1. internal schematic diagram order code v dss r ds(on) max. i d p tot STL6N2VH5 20 v 0.03 (v gs =4.5 v) 0.04 (v gs =2.5 v) 6 a 2.4 w powerflat? 2x2 1 2 3 6 5 4 1 2 3 1(d) 2(d) 3 (g) 6(d) 5(d) 4( s ) d s am11269v1 table 1. device summary order code marking package packaging STL6N2VH5 std1 powerflat? 2x2 tape and reel www.st.com
contents STL6N2VH5 2/12 doc id 023150 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STL6N2VH5 electrical ratings doc id 023150 rev 2 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 20 v v gs gate-source voltage 8 v i d (1) 1. the value is rated according r thj-pcb drain current (continuous) at t pcb = 25 c 6 a i d (1) drain current (continuous) at t pcb = 100 c 3.75 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 24 a p tot (1) total dissipation at t pcb = 25 c 2.4 w t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb 52 c/w
electrical characteristics STL6N2VH5 4/12 doc id 023150 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 20 v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v, v ds = 20 v, t j = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 8 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.7 v r ds(on) static drain-source on- resistance v gs = 4.5 v, i d = 3 a v gs =2.5 v, i d = 3 a 0.025 0.031 0.03 0.04 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 16 v, f=1 mhz, v gs =0 - 550 110 16 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 10 v, i d = 6 a v gs = 4.5 v (see figure 3) - 6 tbd tbd - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 10 v, i d = 3 a, r g = 4.7 , v gs = 4.5 v (see figure 2) - tbd tbd tbd tbd - ns ns ns ns
STL6N2VH5 electrical characteristics doc id 023150 rev 2 5/12 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 6 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 24 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 6 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6 a, di/dt = 100 a/s, v dd = 16 v, t j = 150 c - tbd tbd tbd ns nc a
test circuits STL6N2VH5 6/12 doc id 023150 rev 2 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive waveform figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL6N2VH5 package mechanical data doc id 023150 rev 2 7/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL6N2VH5 8/12 doc id 023150 rev 2 table 8. powerflat? 2x2 mechanical data dim. mm. min. typ. max. a 0.70 0.75 0.80 a1 0.00 0.02 0.05 a3 0.20 b 0.25 0.30 0.35 d 1.90 2.00 2.10 e 1.90 2.00 2.10 d2 0.90 1.00 1.10 e2 0.80 0.90 1.00 e 0.55 0.65 0.75 k 0.15 0.25 0.35 k1 0.20 0.30 0.40 k2 0.25 0.35 0.45 l 0.20 0.25 0.30 l1 0.65 0.75 0.85
STL6N2VH5 package mechanical data doc id 023150 rev 2 9/12 figure 8. powerflat? 2 x 2 drawing 83 6 8 575_rev_c
package mechanical data STL6N2VH5 10/12 doc id 023150 rev 2 figure 9. powerflat? 2 x 2 recommended footprint (dimensions in millimeters) footprint
STL6N2VH5 revision history doc id 023150 rev 2 11/12 5 revision history table 9. document revision history date revision changes 24-apr-2012 1 first release. 10-jan-2013 2 ? modified: r ds(on) values ? document status promoted from target data to preliminary data
STL6N2VH5 12/12 doc id 023150 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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