View EML9366_7768652.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 1/15 1.5mhz 600ma, synchronous step-down regulator general description EML9366 is designed with high efficiency step down dc/dc converter for portable devices applications. it features with extreme low quiescent current with no load which is the best fit for extending battery life during the standby mode. the device operates from 2.5v to 5.5v input voltage and up to 600ma output current capability. high 1.5mhz internal frequency makes small surf ace mount inductors and capacitors possible and reduces overall pcb board space. further, build-in synchronous switch makes external schottky diode is no longer needed and efficiency is improved. EML9366 is designed base on pulse width modulation (pwm) for low output voltage ripple and fixed frequency noise, low dropout mode provides 100% duty cycle operation. low reference voltage is designed for achieving regulated output down to 0.6v. the device is available in an adjustable version and fixed output voltages of 1.2v, 1.5v, 1.8v and 3.3v. the EML9366 is available in sot package. features ? achieve 95% efficiency ? input voltage : 2.5v to 5.5v ? output current up to 600ma ? reference voltage 0.6v ? quiescent current 200 a with no load ? internal switching frequency 1.5mhz ? no schottky diode needed ? low dropout operation: 100% duty cycle ? shutdown current < 1 a ? excellent line and load transient response ? over-temperature protection applications ? blue-tooth devices ? cellular and smart phones ? personal multi-media player (pmp) ? wireless networking ? digital still cameras ? portable applications typical application (adjustable) fig. 1 fig. 2 vout 2.7v sw 3 v fb 5 4 v in 1 en 2 gnd 2.2 uh 22 pf cout 10uf cer vin 3.3 ? 5.5v cin 4.7 uf cer r2 (350k ) r1 (100k ) en
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 2/15 connection diagram order information sot-23-5 EML9366-xxvf05grr/nrr xx output voltage vf05 sot-23-5package grr rohs (pb free ) rating: -40 to 85c package in tape & reel nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel package vout product id marking packing 1.2 EML9366-12vf05grr 1.8 EML9366-18vf05grr sot-23-5 3.3 EML9366-33vf05grr sot-23-5 adjustable EML9366-00vf05grr tape & reel 3kpcs en 1 gnd 2 sw 3 4 v in 5 v fb
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 3/15 package configuration pin functions pin # pin name function 1 en enable pin. minimum 1.2v to enable the device. maximum 0.4v to shut down the device. do not leave this pin floating and enable the chip after vin is in the input voltage range. 2 gnd ground pin. 3 sw switch pin. must be connected to inductor. this pin connects to the drains of the internal main and synchronous power mosfet switches. 4 v in input voltage pin. must be closely decoupled to gnd pin with a 4.7 f or greater ceramic capacitor. v fb (adjustable) feedback pin. receives the feedback voltage from an external resistive divider across the output. 5 v out (fixed voltage) output voltage pin. an internal resistive divider divides the output voltage down for comparison to the internal reference voltage. adjustable sot-23-5 t jmax =125 c , ja =250 c , jc =90 c /w en 1 gnd 2 sw 3 4 v in 5 v fb fixed voltage sot-23-5 t jmax =125 c , c , c /w en 1 gnd 2 sw 3 4 v in 5 v out
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 4/15 absolute maximum ratings devices are subjected to failure if they stay above absolute maximum ratings. input voltage ---------------------------------------- ? 0.3v to 6v en, v fb voltages ------------------------------------- ? 0.3v to v in sw voltage ------------------------------- ? 0.3v to (v in + 0.3v) pmos switch source current (dc) ------------------ 800ma nmos switch sink current (dc) ---------------------- 800ma peak switch sink and source current ------------------ 1.3a operating temperature range ---------- ?40c to 85c junction temperature (notes 1, 3) -------------------- 125c storage temperature range ------------- ? 65c to 150c lead temperature (soldering, 10 sec) ---------------- 240c esd susceptibility hbm ------------------------------------------ 2kv mm ---------------------------------------- 200v electrical characteristics the denotes specifications which apply over the full opera ting temperature range, otherwise specifications are t a = 25c. v in = 3.6v unless otherwise specified. symbol parameter conditions min typ max units i vfb feedback current 30 na v fb regulated feedback voltage t a = 25c 0.588 0.600 0.612 v v fb reference voltage line regulation v in = 2.5v to 5.5v 0.4 %/v v out % output voltage accuracy -3 3 % v ovl = v ovl ? v fb , EML9366 20 50 80 mv v ovl output over-voltage lockout v ovl = v ovl ? v out , EML9366-fixed 2.5 7.8 13 % v out output voltage line regulation v in = 2.5v to 5.5v 0.4 %/v i pk peak inductor current v in = 3v, v fb = 0.5v or v out = 90%, duty cycle < 35% 1.0 a v loadreg output voltage load regulation 0.5 % quiescent current (note 2) v fb = 0.5v or v out = 90% 200 340 a i s shutdown v en = 0v, v in = 4.2v 0.1 1 a oscillator frequency v fb = 0.6v or v out = 100% 1.2 1.5 1.8 mhz f osc v fb = 0v or v out = 0v 290 khz r pfet r ds(on) of pmos i sw = 100ma 0.45 0.55 r nfet r ds(on) of nmos i sw = ?100ma 0.40 0.5 i lsw sw leakage v en = 0v, v sw = 0v or 5v, v in = 5v 1 a enable threshold 1.2 v v en shutdown threshold 0.4 v i en en leakage current 1 a note 1: t j is a function of the ambient temperature t a and power dissipation p d ( t j = t a + (p d )(250c/w) ) note 2: dynamic quiescent current is higher due to the gate charge being delivered at the switching frequency. note 3: this ic is build-in over-temperature protecti on to avoid damage from overload conditions.
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 5/15 typical performance characteristics efficiency vs output current efficiency vs output current output voltage vs load current efficiency vs output current efficiency vs output current reference voltage vs temperature
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 6/15 r ds(on) vs temperature dynamic supply current vs temperature oscillator frequency vs temperature r ds(on) vs input voltage dynamic supply current vs supply voltage oscillator frequency vs supply voltage
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 7/15 typical performance characteristics discontinuous operation load step load step start-up from shutdown load step load step i load 500ma/div i l 500ma/div v in =3.6v 20 s/div v out =1.8v i load =100ma to 600ma v in =3.6v 1 s/div v out =1.8v i load =50ma i l 200ma/div sw 2v/div v out 10mv/div ac coupled en 5v/div v out 1v/div v in =3.6v 40 s/div v out =1.8v i load =600ma (3 resistor) i l 500ma/div v out 100m/div ac coupled i l 500ma/div v in =3.6v 20 s/div v out =1.8v i load =0ma to 600ma i load 500ma/div v out 100m/div ac coupled i l 500ma/div i load 500ma/div v in =3.6v 20 s/div v out =1.8v i load =50ma to 600ma v out 100m/div ac coupled i load 500ma/div v out 100m/div ac coupled i l 500ma/div v in =3.6v 20 s/div v out =1.8v i load =200ma to 600ma
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 8/15 functional block diagram
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 9/15 applications the typical application circuit of adjustable version is shown in fig.1. fixed voltage version is shown below: inductor selection basically, inductor ripple current and core saturation are two factors considered to decide the inductor value. ? ? ? ? ? ? ? ? ? ? = in v out v out v l i 1 1 l f eq. 1 the eq. 1 shows the inductor ripple current is a function of frequency, inductance, vin and vout. it is recommended to set ripple current to 40% of max. load current. a low esr inductor is preferred. c in and c out selection a low esr input capacitor can prevent large voltage transients at v in . the rms current of input capacitor is required larger than i rms calculated by: () in out in out v v v v omax i rms i ? ? eq. 2 esr is an important parameter to select c out . the output ripple v out is determined by: ? ? ? ? ? ? ? ? ? ? + ? out c f 8 1 l i out v esr eq. 3 higher values, lower cost ceramic capacitors are now available in smaller sizes. these ceramic capacitors have high ripple currents, high voltage ratings and low esr that make them ideal for switching regulator applications. optimize very low output ripple and small circuit size is doable from cout selection since cout does not affect the internal control loop stability. it is recommended to use the x5r or x7r which have the best temperature and voltage characteristics of all the ceramics for a given value and size. output voltage (EML9366 adjustable) in the adjustable version, the output voltage can be determined by: ? ? ? ? ? ? ? ? + = 1 r 2 r 1 v out v 6 . 0 eq. 4 thermal considerations although thermal shutdown is build-in in EML9366 that protect the device from thermal damage, the total power dissipation that EML9366 can sustain should be base on the package thermal capability. the formula to ensure the safe operation is shown in note 1. to avoid the EML9366 from exceeding the maximum junction temperature, the user will need to do some thermal analysis. guidelines for pcb layout to ensure proper operation of the EML9366, please note the following pcb layout guidelines: 1. the gnd trace, the sw trace and the v in trace should be kept short, direct and wide. 2. v fb pin must be connected directly to the feedback resistors. resistive divider r 1 /r 2 must be connected and parallel to the output capacitor c out . 3. the input capacitor c in must be connected to pin v in as closely as possible. 4. keep sw node away from the sensitive v fb node since this node is with high frequency and voltage swing. 5. keep the (?) plates of c in and c out as close as possible. vout 1.8v sw 3 v fb 5 4 v in 1 en 2 gnd 2.2 uh cout 10uf cer vin 2.5 ? 5.5v cin 4.7 uf cer en
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 10/15 applications (continued) output voltage ripple when v in closes to v out EML9366 goes into ldo mode when input voltage closes to output voltage. the transition from pwm mode to ldo mode is smooth. bottom diagram shows the relationship of output voltage ripple versus input voltage when output voltage is 3.3v and EML9366 provides 200ma load current. v out ripple when v in closes to v out design example assume the EML9366 is used in a single lithium-ion battery-powered application. the v in range will be about 2.7v to 4.2v. output voltage is 1.8v. with this information we can calculate l using equation: ? ? ? ? ? ? ? ? ? ? = in v out v out v l i 1 1 l f substituting v out = 1.8v, v in = 4.2v, i l = 240ma and f = 1.5mhz in eq. 1 gives: h 86 . 2 1 240ma 1.5mhz 1.8v l = ? ? = ? ? ? ? ? ? 4.2v 1.8v a 2.2 h inductor could be chose with this application. a greater inductor with less equivalent series resistance makes best efficiency. c in will require an rms current rating of at least i load(max) /2 and low esr. in most cases, a ceramic capacitor will satisfy this requirement.
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 11/15 application (continued) typical schematic for pcb layout
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 12/15
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 13/15 package information sot-23-5 o 2 symbpls min. nom. max. a 1.05 1.20 1.35 a1 0.05 0.10 0.15 a2 1.00 1.10 1.20 b 0.30 0.50 c 0.08 0.20 d 2.80 2.90 3.00 e 2.60 2.80 3.00 e1 1.50 1.60 1.70 e 0.95 bsc e1 1.90 bsc l 0.30 0.45 0.55 l1 0.60 ref 0 5 10 2 6 8 10 unit: mm
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 14/15 revision history revision date description 2.0 2009.06.09 emp transferred from version 1.1 2.1 2011.01.28 revise electrical characteristics (ven)
esmt/emp EML9366 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2011 revision : 2.1 15/15 important notice all rights reserved. no part of this document may be repr oduced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this docume nt are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is pr esented only as a guide or examples for the application of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellect ual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted un der any patents, copyrights or other intellectual property righ ts of esmt or others. any semiconductor devices may have in herently a certain rate of failure. to minimize risks associated with cu stomer's application, adequate design and operating safeguards against inju ry, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.

▲Up To Search▲

Price & Availability of EML9366

	To Download EML9366 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .