2006-12-04 rev 1.3 page 1 bss 192 p sipmos ? ? ? ? small-signal-transistor product summary v ds -250 v r ds ( on ) 12 ? i d -0.19 a feature ? p-channel ? enhancement mode ? logic level ? d v /d t rated pg-sot89 2 1 3 vps05162 2 gate pin1 drain pin 2 source pin 3 marking kc type package pb-free tape and reel information bss 192 p pg-sot89 yes maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d -0.19 -0.1 a pulsed drain current t a =25c i d puls -0.76 reverse diode d v /d t i s =-0.19a, v ds =-200v, d i /d t =-200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t a =25c p tot 1 w operating and storage temperature t j , t st g -55... +150 c iec climatic category; din iec 68-1 55/150/56 l6327 : 1000 pcs/reel
2006-12-04 rev 1.3 page 2 bss 192 p thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point (pin 2) r thjs - - 10 k/w thermal resistance, junction - ambient, leaded r thj a - - 125 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =-250a v (br)dss -250 - - v gate threshold voltage, v gs = v ds i d =-130a v gs(th) -1 -1.5 -2 zero gate voltage drain current v ds =-250v, v gs =0, t j =25c v ds =-250v, v gs =0, t j =150c i dss - - -0.1 -10 -0.2 -100 a gate-source leakage current v gs =-20v, v ds =0 i gss - -10 -100 na drain-source on-state resistance v gs =-2.8v, i d =-0.025a r ds(on) - 10 20 drain-source on-state resistance v gs =-4.5v, i d =-0.1a r ds(on) - 8.3 15 drain-source on-state resistance v gs =-10v, i d =-0.19a r ds(on) - 7.7 12
2006-12-04 rev 1.3 page 3 bss 192 p electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs | v ds | 2*| i d |* r ds(on)max , i d =-0.1a 0.19 0.38 - s input capacitance c iss v gs =0, v ds =-25v, f =1mhz - 83 104 pf output capacitance c oss - 13 16 reverse transfer capacitance c rss - 6 8 turn-on delay time t d ( on ) v dd =-125v, v gs =-10v, i d =-0.19a, r g =2 - 4.7 7 ns rise time t r - 5.2 8 turn-off delay time t d ( off ) - 72 108 fall time t f - 50 75 gate charge characteristics gate to source charge q g s v dd =-200v, i d =-0.19a - -0.2 -0.25 nc gate to drain charge q g d - -1.9 -2.4 gate charge total q g v dd =-200v, i d =-0.19a, v gs =0 to -10v - -4.9 -6.1 gate plateau voltage v (p lateau ) v dd =-200v, i d =-0.19a - -2.63 - v reverse diode inverse diode continuous forward current i s t a =25c - - -0.19 a inv. diode direct current, pulse d i sm - - -0.76 inverse diode forward voltage v sd v gs =0, i f =-0.19a - -0.78 -1.1 v reverse recovery time t rr v r =-125v, i f = l s , d i f /d t =100a/s - 46 57 ns reverse recovery charge q rr - 72 90 nc
2006-12-04 rev 1.3 page 4 bss 192 p 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 w 1.1 bss 192 p p tot 2 drain current i d = f ( t a ) parameter: | v gs | 10v 0 20 40 60 80 100 120 c 160 t a 0 -0.02 -0.04 -0.06 -0.08 -0.1 -0.12 -0.14 -0.16 a -0.2 bss 192 p i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25c -10 -1 -10 0 -10 1 -10 2 -10 3 v v ds -3 -10 -2 -10 -1 -10 0 -10 1 -10 a bss 192 p i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 240.0 s 4 transient thermal impedance z thja = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 k/w bss 192 p z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2006-12-04 rev 1.3 page 5 bss 192 p 5 typ. output characteristic i d = f ( v ds ) parameter: t j =25c, - v gs 0 1 2 3 4 5 6 7 8 v 10 - v ds 0 0.1 0.2 0.3 0.4 0.5 a 0.7 - i d 10v 6v 4.6v 4v 3.6v 3.4v 3.2v 2.8v 2.6v 2.4v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs ; t j =25c, - v gs 0 0.1 0.2 0.3 0.4 0.5 a 0.7 - i d 0 1.5 3 4.5 6 7.5 9 10.5 12 15 r ds(on) 2.4v 2.6v 2.8v 3.2v 10v 6v 4.6v 4v 3.6v 3.4v 7 typ. transfer characteristics i d = f ( v gs ); | v ds | 2 x | i d | x r ds(on)max parameter: t j = 25 c 0 0.5 1 1.5 2 2.5 v 3.5 - v gs 0 0.1 0.2 0.3 0.4 0.5 a 0.7 - i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j =25c 0 0.1 0.2 0.3 0.4 0.5 a 0.7 - i d 0 0.1 0.2 0.3 0.4 0.5 0.6 s 0.8 g fs
2006-12-04 rev 1.3 page 6 bss 192 p 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = -0.19 a, v gs = -10 v -60 -20 20 60 100 c 180 t j 0 4 8 12 16 20 24 32 bss 192 p r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 160 t j 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v 2.2 - v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz, t j = 25 c 0 6 12 18 24 v 36 - v ds 0 10 1 10 2 10 3 10 pf c c oss c iss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 v -3 v sd -3 -10 -2 -10 -1 -10 0 -10 a bss 192 p i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2006-12-04 rev 1.3 page 7 bss 192 p 13 typ. gate charge v gs = f ( q gate ) parameter: i d = -0.19 a pulsed, t j = 25 c 0 1 2 3 4 5 6 nc 7.5 |q g | 0 -2 -4 -6 -8 -10 -12 v -16 bss 192 p v gs 20% 50% 80% 14 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -225 -230 -235 -240 -245 -250 -255 -260 -265 -270 -275 -280 -285 v -300 bss 192 p v (br)dss
2006-12-04 rev 1.3 page 8 bss 192 p published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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