Part Number Hot Search : 
0015477 IRHF3130 LM78XX TOP247F MN622 IQ1815 10D4B41 AD704JR
Product Description
Full Text Search
 

To Download IXTX24N100 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c24a i dm t c = 25 c 96 a i a t c = 25 c24a e as t c = 25 c3j dv/dt i s i dm , v dd v dss , t j 150 c 5 v/ns p d t c = 25 c 568 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting force 20..120 / 4.5..27 n/lb. weight 6 g power mosfet n-channel enhancement mode avalanche rated v dss = 1000v i d25 = 24a r ds(on) 400m ds99201c(09/10) IXTX24N100 features ? international standard package ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? avalanche rated ? low package inductance advantages ? plus 247 tm package for clip or spring mounting ? space savings ? high power density applications ? dc-dc converters ? battery chargers ? switch-mode and resonant-mode power supplies ? dc choppers ? ac motor drives ? temperature and lighting controls g = gate d = drain s = source tab = drain plus247 tab symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 400 m
IXTX24N100 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 15 27 s c iss 8700 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 785 pf c rss 315 pf t d(on) 35 ns t r 35 ns t d(off) 75 ns t f 21 ns q g(on) 267 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 52 nc q gd 142 nc r thjc 0.22 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 24 a i sm repetitive, pulse width limited by t jm 96 a v sd i f = 24a, v gs = 0v, note 1 1.5 v t rr 850 ns ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = 24a, -di/dt = 100a/ s, v r = 100v, v gs = 0v dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain 3 - source plus 247 tm (ixtx) outline
? 2010 ixys corporation, all rights reserved IXTX24N100 fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0123456789 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 5v 6v 7v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 02468101214161820 v ds - volts i d - amperes v gs = 10v 5v 6v fig. 4. r ds(on) normalized to i d = 12a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 24a i d = 12a fig. 5. r ds(on) normalized to i d = 12a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 28 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXTX24N100 ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: f_24n100(9x)4-14-10 fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 3.03.54.04.55.05.56.06.57.0 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.20.30.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 30 60 90 120 150 180 210 240 270 q g - nanocoulombs v gs - volts v ds = 500v i d = 12a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w


▲Up To Search▲   

 
Price & Availability of IXTX24N100

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X