http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 ECH8651R n-channel power mosfet 24v, 10a, 14m , dual ech8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance ? built-in gate protection resistor ? 2.5v drive ? best suited for lib charging and discharging switch ? common-drain type ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 24 v gate-to-source voltage v gss 12 v drain current (dc) i d 10 a drain current (pulse) i dp pw 10 s, duty cycle 1% 60 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.4 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7011a-003 product & package information ? package : ech8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection ordering number : ena1010a 8765 1234 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain 6 : drain 7 : drain 8 : drain ech8 1 4 85 0.15 0 to 0.02 0.25 0.25 2.8 2.3 0.65 2.9 0.3 0.9 0.07 top view bottom view tl wv lot no. ECH8651R-tl-h 50912 tkim/40908pe tiim tc-00001313 no. a1010-1/7
electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 24 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance | yfs | v ds =10v, i d =5a 5.5 9.5 s static drain-to-source on-state resistance r ds (on)1 i d =5a, v gs =4.5v 7 10.5 14 m r ds (on)2 i d =5a, v gs =4.0v 7.2 11 15 m r ds (on)3 i d =5a, v gs =3.1v 7.5 12.5 17.5 m r ds (on)4 i d =2.5a, v gs =2.5v 9 15 21 m turn-on delay time t d (on) see speci ed test circuit. 300 ns rise time t r 1000 ns turn-off delay time t d (off) 4000 ns fall time t f 2500 ns total gate charge qg v ds =10v, v gs =10v, i d =10a 24 nc gate-to-source charge qgs 2nc gate-to-drain ?miller? charge qgd 4.5 nc diode forward voltage v sd i s =10a, v gs =0v 0.77 1.2 v switching time test circuit ordering information device package shipping memo ECH8651R-tl-h ech8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =5a r l =2 v dd =10v v out ECH8651R v in 4.5v 0v v in r g r g =1k ECH8651R no. a1010-2/7
0 it13149 0 2 4 6 7 1 3 5 9 8 10 0 0.1 0.2 0.3 0.4 0.5 26 4810 0 5 10 15 20 30 25 35 40 v gs =1v 2.5v ta=25 c it13148 3.1v 4v 4.5v 1.5v i d =2.5a 5.0a gate-to-source voltage, v gs -- v r ds (on) -- v gs drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m 0.1 0.4 0.5 0.2 0.3 0.6 0.7 0.8 0.9 it13150 --50 0 50 100 150 200 0 5 15 10 20 25 30 it13151 it13152 0.001 0.01 7 5 3 2 0.1 7 5 3 2 2 1.0 7 5 3 2 1.0 2 3 10 7 5 0.1 57 23 1.0 2 ta= --25 c 75 c 25 c v ds =10v --25 c 25 c ta=75 c v gs =0v 10 57 3 10 7 5 3 v gs =3.1v, i d =5a v gs =2.5v, i d =2.5a v gs =4.0v, i d =5a v gs =4.5v, i d =5a ambient temperature, ta -- c r ds (on) -- ta drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a i s -- v sd static drain-to-source on-state resistance, r ds (on) -- m a s o drain-to-source voltage, v ds -- v drain current, i d -- a sw time -- i d v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v switching time, sw time -- ns drain current, i d -- a 2 100 2 1000 1000 7 5 3 7 5 3 0.1 2 1.0 357 it13295 v dd =10v v gs =4v t d (off) t d (on) t r t f 10 23 57 0 5 10 15 20 25 30 0 1.0 0.5 2.0 1.5 3.0 2.5 3.5 4.0 4.5 it13296 v ds =10v i d =10a it13390 2 2 3 5 7 0.1 2 3 5 7 1.0 0.01 0.01 0.1 57 23 2 1.0 57 32 10 57 33 25 operation in this area is limited by r ds (on). pw 10 s 100 s 100ms dc operation 10ms 1ms 2 3 5 7 3 2 5 7 10 100 i dp =60a i d =10a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit forward transfer admittance, | y fs | -- s | y fs | -- i d ECH8651R no. a1010-3/7
it13154 0 0 20 40 0.4 60 80 100 120 140 160 1.0 1.4 1.5 1.8 0.2 0.8 0.6 1.2 1.6 1unit ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w total dissipation when mounted on ceramic substrate (900mm 2 ? 0.8mm) ECH8651R no. a1010-4/7
embossed taping speci cation ECH8651R-tl-h ECH8651R no. a1010-5/7
outline drawing land pattern example ECH8651R-tl-h mass (g) unit 0.02 * for reference mm unit: mm 0.4 0.6 2.8 0.65 ECH8651R no. a1010-6/7
note on usage : since the ECH8651R is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. ECH8651R ps no. a1010-7/7
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