advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 80v single drive requirement r ds(on) 52m surface mount package i d 4.6a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 continuous drain current 3 , v gs @ 10v 2.9 pulsed drain current 1 30 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 4.6 parameter rating drain-source voltage 80 rohs-compliant product 1 AP9980GM 200808191 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 80 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =4.6a - - 52 m ? ?
AP9980GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 60 70 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) v g =3.0v t a =25 o c 10v 7.0v 5.0v 4.5v 0 10 20 30 40 50 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c v g =3.0v 10v 7.0v 5.0v 4.5v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.3 0.8 1.3 1.8 2.3 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 4.6 a v g =10v 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 40 45 50 55 246810 v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform AP9980GM 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0 4 8 12 16 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =40v v ds =50v v ds =64v 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a rthja = 135 : /w t t 0.02
package outline : so-8 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 0.00 4.00 8.00 e 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ advanced power electronics corp. c detail a a1 a 9980 g m ywwsss package code part numbe r detail a l date code (ywwsss) y last digit of the year ww week sss sequence e b 1 34 5 6 7 8 2 d e1 e meet rohs requirement for low voltage mosfet only
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