spc6602 description applications the spc6602 is the n- a nd p-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration( tsop? 6p ) part marking ? n-channel 30v/2.8a,r ds(on) = 60m ? @v gs =10v 30v/2.3a,r ds(on) = 80m ? @v gs =4.5v ? p-channel -30v/-2.8a,r ds(on) =105m ? @v gs =- 10v -30v/-2.5a,r ds(on) =135m ? @v gs =-4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? tsop? 6p package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g1 gate 1 2 s2 source 2 3 g2 gate 2 4 d2 drain 2 5 s1 source 1 6 d1 drain1 ordering information part number package part marking SPC6602ST6RG tsop- 6p 02yw SPC6602ST6RGb tsop- 6p 02yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPC6602ST6RG : tape reel ; pb ? free SPC6602ST6RGb : tape reel ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) typical parameter symbol n-channel p-channel unit drain-source voltage v dss 30 -30 v gate ?source voltage v gss 20 20 v t a =25 2.8 -2.8 continuous drain current(t j =150 ) t a =70 i d 2.3 -2.1 a pulsed drain current i dm 10 -8 a continuous source current(diode conduction) i s 1.25 -1.4 a t a =25 1.15 power dissipation t a =70 p d 0.75 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 t 10sec 50 52 thermal resistance-junction to ambient steady state r ja 90 90 /w spc6602 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
parameter symbol conditions min. typ max. unit static v gs =0v,i d = 250ua n-ch 30 drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua p-ch -30 v ds =v gs ,i d =250ua n-ch 1 3 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua p-ch 1 -3 v v ds =0v,v gs =20v n-ch 100 gate leakage current i gss v ds =0v,v gs =20v p-ch 100 na v ds = 24v,v gs =0v n-ch 1 v ds =-24v,v gs =0v p-ch -1 v ds = 24v,v gs =0v t j =55 n-ch 10 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =55 p-ch -10 ua v ds 5v,v gs = 10v n-ch 6 on-state drain current i d(on) v ds -5v,v gs =-10v p-ch -6 a v gs = 10v,i d = 2.8a n-ch 0.043 0.060 v gs =-10v,i d =-2.8a p-ch 0.088 0.105 v gs = 4.5v,i d = 2.3a n-ch 0.056 0.080 drain-source on-resistance r ds(on) v gs =-4.5v,i d =-2.5a p-ch 0.118 0.135 ? v ds =4.5v,i d =2.8a n-ch 4.6 forward transconductance gfs v ds =-10v,i d =-2.8a p-ch 4 s i s = 1.25a,v gs =0v n-ch 0.8 1.2 diode forward voltage v sd i s =-1.2a,v gs =0v p-ch -0.8 -1.2 v dynamic n-ch 4.5 10 total gate charge q g p-ch 5.8 10 n-ch 0.8 gate-source charge q gs p-ch 0.8 n-ch 1.0 gate-drain charge q gd n-channel v ds =15 ,v gs =4.5v , i d 2.0a p-channel v ds =-15v ,v gs =-4.5v , i d -2.0a p-ch 1.5 nc n-ch 8 20 t d(on) p-ch 9 20 n-ch 12 30 turn-on time t r p-ch 9 20 n-ch 17 35 t d(off) p-ch 18 35 n-ch 8 20 turn-off time t f n-channel v dd =15 , r l =10 ? v gen =10v , r g =3 ? p-channel v dd =-15v , r l =15 ? v gen =-10v , r g =3 ? p-ch 6 20 ns spc6602 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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