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| light emitting diode(gaalas) dimensions KLP-32R-x has a high bright ingaalp red led and has the optimized optical characteristics. features ? transparent epoxy encapsulent ? high optical output applications ? display ? indicator ? signage maximum ratings [ ta=25 c ] *1. i fp measured under duty 1/10 @ 1khz *2. soldering time 5 sec electro-optical characteristics [ ta=25 c ] 1/2 parameter symbol ratings unit KLP-32R-x reverse voltage v r 5v forward current i f 20 ma pulse forward current *1 i fp 0.1 a power dissipation p d 90 mw operating temperature t opr. -30 ~ +85 c storage temperature t stg. -40 ~ +105 c soldering temperature *2 t sol. 260 c parameter symbol conditions min typ max unit forward voltage v f i f = 20 ma - 1.8 2.2 v optical output power po i f = 20 ma 6.00 6.80 - mw iv 280 350 - mcd peak emission wavelength p i f = 20 ma - 630 - nm doninant wave length d i f = 20 ma 620 - 635 nm deg. spectral half bandwidth ? i f = 20 ma -20-nm half angle ? i f = 20 ma - 110 - 2 1 p i n c o n n e c t i o n 1 . c a t h o d e 2 . a n o d e
light emitting diode(ingaalp) 2/2 KLP-32R-x 0 0.2 0.4 0.6 0.8 1 1.2 500 550 600 650 700 750 wave length[nm] intensity [arb.] forward current vs. ambient temperature radiant intensity vs. forward current relative radiant intensity vs. ambient temperature forward current vs. forward voltage relative intensity vs. wavelength radiant pattern a mbient temperature t a forward current i f forward current if(ma) relative intensity relative radiant intensity p o a mbient temperature t a forward voltage v f forward current i f relative intensity(%) a ngle(deg) 100 0.1 -20 40 20 080 60 10 1 () 5 0 + 2 0 + 1 0 0 1 0 0 + 8 0 + 4 0 + 6 0 - 8 0 5 0 0 - 1 0 0 1 0 0 - 2 0 5 0 0 - 4 0 - 6 0 1.5 0 0 0.5 1.0 5 15 10 3.0 2.0 2.5 3.5 (v) (?) 30 25 20 0 0 510 0.5 1 (if) 1.5 15 20 25 30 35 w c u n |
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