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| savantic semiconductor product specification silicon npn power transistors bu526 BU526A description with to-3 package short switching times. high dielectric strength. applications for use in power supply units of tv receives. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v bu526 400 v ceo collector-emitter voltage BU526A open base 460 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a i cm collector current-peak 10 a p t total power dissipation t c =25 86 w t j junction temperature 175 t stg storage temperature -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.04 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors bu526 BU526A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bu526 400 v (br)ceo collector-emitter breakdown voltage BU526A i c =50ma; i b =0; 460 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0; 7 v v cesat-1 collector-emitter saturation voltage i c =5a;i b =1 a 1.5 v v cesat-2 collector-emitter saturation voltage i c =8a;i b =3 a 5.0 v v besat base-emitter saturation voltage i c =5a;i b =1 a 1.6 v i cbo collector cut-off current v cb =900v;i e =0 0.1 ma i ebo emitter cut-off current v eb =7v;i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =5v 15 45 savantic semiconductor product specification 3 silicon npn power transistors bu526 BU526A package outline fig.2 outline dimensions |
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