AOW480 80v n-channel mosfet sdmos tm general description product summary v ds 80v i d (atv gs =10v) 180a r ds(on) (atv gs =10v) <4.5m w r ds(on) (atv gs =7v) <5.5m w 100%uistested 100%r g tested symbol v ds v gs theAOW480isfabricatedwithsdmos tm trench technologythatcombinesexcellentr ds(on) withlowgate charge&lowq rr .theresultisoutstandingefficiencywith controlledswitchingbehavior.thisuniversaltechn ologyis wellsuitedforpwm,loadswitchingandgeneralpur pose applications. v 25 gatesourcevoltage drainsourcevoltage 80 v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 180 t =25c continuousdrain top view to-262 bottom view g d s g d s g d s i dm i as ,i ar e as ,e ar t j ,t stg symbol t10s steadystate steadystate r q jc 12 continuousdrain current 405 max t c =25c 1.9 167 t c =100c junctionandstoragetemperaturerange 55to175 15 c thermal characteristics avalancheenergyl=0.1mh c mj a 90 a t a =25c i dsm a t a =70c i d 180 134 t c =25c t c =100c 500 pulseddraincurrent c continuousdrain current g avalanchecurrent c w powerdissipation a p dsm w t a =70c 333 1.2 t a =25c powerdissipation b p d units maximumjunctiontoambient a maximumjunctiontocase c/w c/w maximumjunctiontoambient ad 0.35 65 0.45 c/w r q ja 12 54 15 parameter typ rev0:july2011 www.aosmd.com page1of7
AOW480 symbol min typ max units bv dss 80 v v ds =80v,v gs =0v 10 t j =55c 50 i gss 100 na v gs(th) gatethresholdvoltage 2 2.8 4 v i d(on) 500 a 3.7 4.5 t j =125c 6.1 7.3 4.2 5.5 m w g fs 60 s v sd 0.6 1 v i s 180 a c iss 5200 6520 7820 pf c oss 570 810 1060 pf c rss 185 310 430 pf r g 0.3 0.64 1 w q g (10v) 92 116 140 nc q gs 24 30 36 nc q gd 23 38 53 nc t d(on) 31.5 ns t 33 ns maximumbodydiodecontinuouscurrent inputcapacitance outputcapacitance turnondelaytime dynamic parameters turnonrisetime v =10v,v =40v,r =2 w , gateresistance v gs =0v,v ds =0v,f=1mhz totalgatecharge v gs =10v,v ds =40v,i d =20a gatesourcecharge r ds(on) m w i s =1a,v gs =0v v ds =5v,i d =20a v gs =7v,i d =20a diodeforwardvoltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zerogatevoltagedraincurrent drainsourcebreakdownvoltage onstatedraincurrent i d =250 m a,v gs =0v v gs =10v,v ds =5v v gs =10v,i d =20a reversetransfercapacitance v gs =0v,v ds =40v,f=1mhz switching parameters v ds =5v , i d =250 m a v ds =0v,v gs =25v gatebodyleakagecurrent forwardtransconductance staticdrainsourceonresistance gatedraincharge t r 33 ns t d(off) 46 ns t f 17.5 ns t rr 20 28 36 ns q rr 90 132 170 nc thisproducthasbeendesignedandqualifiedforth econsumermarket.applicationsorusesascritical componentsinlifesupportdevicesorsystemsaren otauthorized.aosdoesnotassumeanyliabilityar ising outofsuchapplicationsorusesofitsproducts. aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. bodydiodereverserecoverycharge i f =20a,di/dt=500a/ m s turnonrisetime turnoffdelaytime v gs =10v,v ds =40v,r l =2 w , r gen =3 w turnofffalltime bodydiodereverserecoverytime i f =20a,di/dt=500a/ m s a.thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenviron mentwitht a =25 c.the powerdissipationp dsm isbasedonr q ja andthemaximumallowedjunctiontemperatureof150 c.thevalueinanygivenapplicationdepends ontheuser'sspecificboarddesign,andthemaximu mtemperatureof175 cmaybeusedifthepcballowsit. b.thepowerdissipationp d isbasedont j(max) =175 c,usingjunctiontocasethermalresistance,andi smoreusefulinsettingtheupper dissipationlimitforcaseswhereadditionalheatsi nkingisused. c.repetitiverating,pulsewidthlimitedbyjuncti ontemperaturet j(max) =175 c.ratingsarebasedonlowfrequencyanddutycycl estokeep initialt j =25 c. d.ther q ja isthesumofthethermalimpedancefromjunctiont ocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6are obtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocaset hermalimpedancewhichismeasuredwiththedevice mountedtoalargeheatsink,assuming amaximumjunctiontemperatureoft j(max) =175 c.thesoacurveprovidesasinglepulserating. g.themaximumcurrentispackagelimited. h.thesetestsareperformedwiththedevicemounte don1in 2 fr4boardwith2oz.copper,inastillairenviron mentwitht a =25 c. rev0:july2011 www.aosmd.com page2of7
AOW480 typical electrical and thermal characteristics 17 52 10 0 18 0 30 60 90 120 150 180 2 3 4 5 6 7 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 3 4 5 6 7 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =7v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =7v v gs =10v 0 40 80 120 160 200 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =4.5v 6.5v 5.5v 10v 5v 6v 7v 40 voltage (note e) 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 3 4 5 6 7 8 9 4 5 6 7 8 9 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev0:july2011 www.aosmd.com page3of7
AOW480 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 20 40 60 80 100 120 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 20 40 60 80 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 1000 2000 3000 4000 5000 0.00001 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - case c oss c rss v ds =40v i d =20a t j(max) =175 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 40 figure 10: single pulse power rating junction - to - case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) singlepulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse figure 9: maximum forward biased safe operating area (note f) r q jc =0.45 c/w rev0:july2011 www.aosmd.com page4of7
AOW480 typical electrical and thermal characteristics 17 52 10 0 18 10.0 100.0 1000.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) 0 40 80 120 160 200 240 280 320 360 0 25 50 75 100 125 150 175 power dissipation (w) t case (c) figure 13: power de-rating (note f) 0 40 80 120 160 200 0 25 50 75 100 125 150 175 current rating i d (a) t case (c) figure 14: current de-rating (note f) t a =25 c 1 10 100 1000 0.0001 0.01 1 100 10000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) singlepulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse ambient (note h) r q ja =65 c/w rev0:july2011 www.aosmd.com page5of7
AOW480 typical electrical and thermal characteristics 2 10 18 26 34 42 50 80 120 160 200 240 0 5 10 15 20 25 30 i rm (a) q rr (nc) i s (a) figure 17: diode reverse recovery charge and peak current vs. conduction current di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 0 10 20 30 40 0 40 80 120 160 200 240 0 200 400 600 800 1000 i rm (a) q rr (nc) di/dt (a/ m mm m s) figure 19: diode reverse recovery charge and peak current vs. di/dt 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 0.5 1 1.5 4 8 12 16 20 24 28 32 36 0 5 10 15 20 25 30 s t rr (ns) i s (a) figure 18: diode reverse recovery time and softness factor vs. conduction current di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 0 0.5 1 1.5 2 0 10 20 30 40 50 0 200 400 600 800 1000 s t rr (ns) di/dt (a/ m mm m s) figure 20: diode reverse recovery time and softness factor vs. di/dt 125oc 25oc 25oc 125oc i s =20a t rr s rev0:july2011 www.aosmd.com page6of7
AOW480 + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclampedinductiveswitching(uis)testcircuit& waveforms vds dss 2 e=1/2li ar ar vdd vgs vgs rg dut + vdc vgs id vgs i ig vgs + vdc dut l vgs vds isd isd dioderecoverytestcircuit&waveforms vds vds+ i f ar di/dt i rm rr vdd vdd q=idt t rr rev0:july2011 www.aosmd.com page7of7
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