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Datasheet File OCR Text: |
to-92mod plastic-encapsulate transistors 3CG751 transistor (pnp) feature y high power amplifier y low v ce(sat) maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -30 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -1.5 a p c collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics ( t a =25 unless otherwise specified ) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c = -100a, i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c = -1 ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100a , i c =0 -5 v collector cut-off current i cbo v cb = -30 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =-2 v, i c = -500ma 100 400 collector-emitter saturation voltage v ce(sat) i c = -1.5 a, i b = -30ma -2 v transition frequency f t v ce = -5v, i c = -100ma 50 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 80 pf classification of h fe rank o y range 100-240 150-400 to-92mod 1.emitter 2.collector 3.base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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