2013/10/21 ver.1 page 1 spn8206 common-drain dual n-channel enhancement mode mosfet description applications the spn8206 is the common-drain dual n-channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application, notebook computer power mana gement and other battery powered circuits where high-side switching. ? power management in note book ? portable equipment ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter features pin configuration(tdfn? 6p) ? 20v/5.0a,r ds(on) = 8.2m ? @v gs = 4.5v ? 20v/3.0a,r ds(on) = 11.0m ? @v gs = 2.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? esd capability 2kv ? tdfn -6p package design part marking
2013/10/21 ver.1 page 2 spn8206 common-drain dual n-channel enhancement mode mosfet pin description pin symbol description 1 s1 source 2 s1 source 3 g1 gate 4 g2 gate 5 s2 source 6 s2 source exposed backside metal d1/d2 drain ordering information part number package part marking SPN8206TDN6RGB tdfn- 6p 8206 SPN8206TDN6RGB : 7? tape reel ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 20 v gate ?source voltage v gss 12 v continuous drain current(t j =150 ) t a =25 i d 11 a t a =70 8.0 pulsed drain current i dm 70 a power dissipation t a =25 p d 1.5 w t a =70 1.0 operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 80 /w
2013/10/21 ver.1 page 3 spn8206 common-drain dual n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.5 1.5 gate leakage current i gss v ds =0v,v gs =12v 10 ua zero gate voltage drain current i dss v ds =16v,v gs =0.0v 1 ua v ds =16v,v gs =0.0v t j =55 10 drain-source on-resistance r ds(on) v gs = 4.5v,i d =5.5a 8.2 m ? v gs = 4.0v,i d =5.5a 8.5 v gs = 3.7v,i d =5.5a 9.0 v gs = 3.1v,i d =5.5a 9.4 v gs = 2.5v,i d =5.5a 11.0 diode forward voltage v sd i s =1a,v gs =0v 1.2 v dynamic total gate charge q g v ds =16v, v gs =4.5v i d =11a 15 nc gate-source charge q gs 3 gate-drain charge q gd 7 input capacitance c iss v ds =10v, v gs =0v f=1mhz 1310 pf output capacitance c oss 264 reverse transfer capacitance c rss 235 turn-on time t d(on) v ds =16v, i d =5.5a, v gs =4.5v, r g =6.0 ? 31 ns t r 87 turn-off time t d(off) 69 t f 37
2013/10/21 ver.1 page 4 spn8206 common-drain dual n-channel enhancement mode mosfet typical characteristics
2013/10/21 ver.1 page 5 spn8206 common-drain dual n-channel enhancement mode mosfet typical characteristics
2013/10/21 ver.1 page 6 spn8206 common-drain dual n-channel enhancement mode mosfet typical characteristics
2013/10/21 ver.1 page 7 spn8206 common-drain dual n-channel enhancement mode mosfet tdfn- 6p package outline
2013/10/21 ver.1 page 8 spn8206 common-drain dual n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any patent or patent rights of sync power corporation. conditions mentioned in this pub lication are subject to change without notice. this publication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without expres s written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2013 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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