?200 8 fairchild semiconductor corporation 1 www.fairchildsemi.com ffb10up20s rev. a 1 ffb10up20s ultrafast re covery power rectifier ffb10up20s ultrafast recovery power rectifier features ? ultrafast with soft recovery : < 45ns ? high reverse voltage : v rrm = 200v ? avalanche energy rated ? planar construction applications ? output rectifiers ? switching mode power supply ? free-wheeling diode for motor application ? power switching circuits absolute maximum ratings (per diode) t a = 25c unless otherwise noted thermal characteristics t a = 25c unless otherwise noted symbol parameter value units v rrm peak repetitive reverse voltage 200 v v rwm working peak reverse voltage 200 v v r dc blocking voltage 200 v i f(av) average rectified forward current @ t c = 120 c10 a i fsm non-repetitive peak surge current 60hz single half-sine wave 100 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max units r jc maximum thermal resistance, junction to case 3.0 c/w 1.anode 2.cathode 3.anode 1. anode 2. cathode 3. anode 1 d2-pak 1 2 3 ? r ohs compliant oct obe r 200 8 super fet tm
2 www.fairchildsemi.com ffb10up20s rev. a 1 ffb10up20s ultrafast re covery power rectifier electrical characteristics (per diode) t a = 25c unless otherwise noted * pulse test: pulse width=300 s, duty cycle = 2% symbol parameter min. typ. max. units v fm * i f = 10a i f = 10a t c = 25 c t c = 150 c - - - - 1.15 1.0 v v i rm * v r = 200v v r = 200v t c = 25 c t c = 150 c - - - - 100 500 a a t rr i f =1a, di/dt = 100a/ s, v cc = 30v i f =10a, di/dt = 200a/ s, v cc = 130v t c = 25 c t c = 25 c - - - - 35 45 ns ns t a t b q rr i f =10a, di/dt = 200a/ s, v cc = 130v t c = 25 c t c = 25 c t c = 25 c - - - 15 12 36 - - - ns ns nc w avl avalanche energy (l = 20mh) 10 - - mj
3 www.fairchildsemi.com ffb10up20s rev. a 1 ffb10up20s ultrafast re covery power rectifier typical performance characteristics figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.1 1 10 50 0.0 0.5 1.0 1.5 2.0 t c = 25 o c t c = 100 o c forward voltage , v f [v] forward current , i f [a] 0 50 100 150 200 0.001 0.01 0.1 1 10 100 t c = 25 o c t c = 100 o c reverse current , i r [ a] reverse voltage , v r [v] 0.1 1 10 100 10 100 400 f = 1 mhz capacitance , cj [pf] reverse voltage , v r [v] 100 200 300 400 500 20 30 40 50 60 t c =25 o c reverse recovery time , t rr [ns] di/dt [a/ s] t c =125 o c i f =10a 100 200 300 400 500 0 2 4 6 8 10 12 t c =25 o c i f = 10a reverse recovery current , i rr [a] di/dt [a/ s] t c =125 o c 100 110 120 130 140 150 0 2 4 6 8 10 12 14 average rectified forward current, i f(av) [a] case temperature, t c [ o c] dc
di mensions in millimeters mechanical dimensions d 2 - pa k f fb10up20s ultrafast recovery power rectifier f fb10up20s rev. a 1 www.fair c h ildsemi.com 4 f fb10up20s ultrafast recovery power rectifier f fb10up20s rev. a www.fair c h ildsemi.com 8 f fb10up20s ultrafast recovery power rectifier f fb10up20s rev. a www.fair c h ildsemi.com 8 f fb10up20s ultrafast recovery power rectifier f fb10up20s rev. a www.fair c h ildsemi.com 8 f fb10up20s ultrafast recovery power rectifier f fb10up20s rev. a www.fair c h ildsemi.com 8
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