digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mac229(a) series silicon bidirectional thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings (t j = 25c unless otherwise noted) rating symbol value unit peak repetitive off-state voltage (1) (t j = -40 to +110c, ? sine wave, 50 to 60hz, gate open) mac229-4, mac229a-4 mac229-6, mac229a-6 mac229-8, mac229a-8 MAC229-10, mac229a-10 v drm 200 400 600 800 volts rms on-state current (full cycle sine wave, 50 to 60hz, t c = 80c) i t(rms) 8 amps peak non-repetitive surge current (1 cycle, 60hz, t j = 110c) i tsm 80 amps circuit fusing considerations (t = 8.3ms) i 2 t 26 a 2 s peak gate current (t 2s) i gm 2 amps peak gate voltage (t 2s) v gm 10 volts peak gate power (t 2s) p gm 20 watts average gate power (t c = 80c, t 8.3ms) p g(av) 0.5 watts operating junction temperature range t j -40 to +110 c storage temperature range t stg -40 to +150 c mounting torque 8 in. lb. note 1: v drm for all types can be applied on a continuous basis. blocking vo ltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 2.2 c/w thermal resistance, junction to ambient r ? ja 60 c/w electrical characteristics (t c = 25c and either polarity of mt2 to mt1 voltage unless otherwise noted) characteristic symbol min typ. max unit peak blocking current (2) (v d = rated v drm , gate open, t j = 25c) (v d = rated v drm , gate open, t j = 110c) i drm - - - - 10 2 a ma peak on-state voltage (i tm = 11a peak, pulse width 2ms, duty cycle 2%.) v tm - - 1.8 volts gate trigger current (continuous dc) (v d = 12v, r l = 100 ? ) mt2(+),g(+); mt2(+),g(-); mt2(-),g(-) mt2(-),g(+) ?a? suffix only i gt - - - - 10 15 ma gate trigger voltage (continuous dc) (v d = 12v, r l = 100 ? ) mt2(+),g(+); mt2(+),g(-); mt2(-),g(-) mt2(-),g(+) ?a? suffix only (v d = rated v drm , r l = 10k ? , t c = 110c) mt2(+),g(+); mt2(+),g(-); mt2(-),g(-), all types mt2(-),g(+) ?a? suffix only v gt - - 0.2 0.2 - - - - 2.0 2.5 - - volts holding current (v d = 12v, i tm = 200ma, gate open) i h - - 15 ma gate controlled turn-on time (v d = rated v drm , i tm = 16a, i g = 30ma) t gt - 1.5 - s sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130213
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mac229(a) series silicon bidirectional thyristors characteristic symbol min typ. max unit critical rate of rise of off-state voltage (v d = rated v drm , exponential waveform, t c = 110c) dv/dt - 25 - v/s critical rate of rise of commutation voltage (v d = rated v drm, i tm = 11.3a peak, commutating di/dt = 4.1a/ms, gate unenergized, t c = 80c) dv/dt(c) - 5 - v/s note 2: ratings apply for open gate condit ions. devices shall not be tested with a co nstant current source for blocking voltage s such that the voltage applied exceeds the rated blocking voltage. mechanical characteristic case to-220ab marking alpha-numeric pin out see below sales@digitroncorp.com to-220ab inches millimeters min max min max a 0.575 0.620 14.600 15.750 b 0.380 0.405 9.650 10.290 c 0.160 0.190 4.060 4.820 d 0.025 0.035 0.640 0.890 f 0.142 0.147 3.610 3.730 g 0.095 0.105 2.410 2.670 h 0.110 0.155 2.790 3.930 j 0.014 0.022 0.360 0.560 k 0.500 0.562 12.700 14.270 l 0.045 0.055 1.140 1.390 n 0.190 0.210 4.830 5.330 q 0.100 0.120 2.540 3.040 r 0.080 0.110 2.040 2.790 s 0.045 0.055 1.140 1.390 t 0.235 0.255 5.970 6.480 u - 0.050 - 1.270 v 0.045 - 1.140 - z - 0.080 - 2.030 fax +1.908.245-0555 www.digitroncorp.com rev. 20130213
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