tlz... vishay semiconductors rev. a4, 08-jaug-02 1 (9) www.vishay.com document number 85635 zdiodes features very sharp reverse characteristic low reverse current level available with tighter tolerances very high stability low noise silicon epitaxial planar high reliability applications voltage stabilization order instruction type ordering code remarks tlz2v4 tlz2v4gs08 tape and reel (2.500 pcs) tlz2v4 tlz2v4gs18 tape and reel (10.000 pcs) absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit power dissipation r thja 300k/w p v 500 mw zcurrent i z p v /v z ma junction temperature t j 175 c storage temperature range t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient on pc board 50 mmx50 mmx1.6 mm r thja 500 k/w electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =200ma v f 1.5 v
tlz... vishay semiconductors rev. a4, 08-aug-02 2 (9) www.vishay.com document number 85635 type v zmin v zmax. at i z z zmax at i z z zkmax. at i z i rmax. at v r i rmax 2) at v r 2) body mark- (v) (v) (ma) ( ) (ma) ( ) (ma) ( a) (v) ( a) (v) ing tlz2v4 2.330 2.630 20 100 20 2000 1 120 1.0 70 0.8 2v4 tlz2v4a 2.330 2.520 20 100 20 2000 1 120 1.0 70 0.8 2a4 tlz2v4b 2.430 2.630 20 100 20 2000 1 120 1.0 70 0.8 2b4 tlz2v7 2.540 2.910 20 100 20 1000 1 100 1.0 70 0.8 2v7 tlz2v7a 2.540 2.750 20 100 20 1000 1 100 1.0 70 0.8 2a7 tlz2v7b 2.690 2.910 20 100 20 1000 1 100 1.0 70 0.8 2b7 tlz3v0 2.850 3.220 20 80 20 1000 1 50 1.0 70 0.8 3v0 tlz3v0a 2.850 3.070 20 80 20 1000 1 50 1.0 70 0.8 3a0 tlz3v0b 3.010 3.220 20 80 20 1000 1 50 1.0 20 0.8 3b0 tlz3v3 3.160 3.530 20 70 20 1000 1 20 1.0 20 0.8 3v3 tlz3v3a 3.160 3.380 20 70 20 1000 1 20 1.0 20 0.8 3a3 tlz3v3b 3.320 3.530 20 70 20 1000 1 20 1.0 20 0.8 3b3 tlz3v6 3.455 3.845 20 60 20 1000 1 10 1.0 6 0.8 3v6 tlz3v6a 3.455 3.695 20 60 20 1000 1 10 1.0 6 0.8 3a6 tlz3v6b 3.600 3.845 20 60 20 1000 1 10 1.0 6 0.8 3b6 tlz3v9 3.74 4.16 20 50 20 1000 1 5 1.0 3 0.8 3v9 tlz3v9a 3.74 4.01 20 50 20 1000 1 5 1.0 3 0.8 3a9 tlz3v9b 3.89 4.16 20 50 20 1000 1 5 1.0 3 0.8 3b9 tlz4v3 4.04 4.57 20 40 20 1000 1 5 1.0 3 0.8 4v3 tlz4v3a 4.04 4.29 20 40 20 1000 1 5 1.0 3 0.8 4a3 tlz4v3b 4.17 4.43 20 40 20 1000 1 5 1.0 3 0.8 4b3 tlz4v3c 4.30 4.57 20 40 20 1000 1 5 1.0 3 0.8 4c3 tlz4v7 4.44 4.93 20 25 20 900 1 5 1.0 1.5 0.8 4v7 tlz4v7a 4.44 4.68 20 25 20 900 1 5 1.0 1.5 0.8 4a7 tlz4v7b 4.55 4.80 20 25 20 900 1 5 1.0 1.5 0.8 4b7 tlz4v7c 4.68 4.93 20 25 20 900 1 5 1.0 1.5 0.8 4c7 tlz5v1 4.81 5.37 20 20 20 800 1 5 1.5 0.5 1.0 5v1 tlz5v1a 4.81 5.07 20 20 20 800 1 5 1.5 0.5 1.0 5a1 tlz5v1b 4.94 5.20 20 20 20 800 1 5 1.5 0.5 1.0 5b1 tlz5v1c 5.09 5.37 20 20 20 800 1 5 1.5 0.1 1.0 5c1 tlz5v6 5.28 5.91 20 13 20 500 1 5 2.5 0.1 1.0 5v6 tlz5v6a 5.28 5.55 20 13 20 500 1 5 2.5 0.1 1.0 5a6 tlz5v6b 5.45 5.73 20 13 20 500 1 5 2.5 0.1 1.0 5b6 tlz5v6c 5.61 5.91 20 13 20 500 1 5 2.5 0.1 1.0 5c6
tlz... vishay semiconductors rev. a4, 08-jaug-02 3 (9) www.vishay.com document number 85635 type v zmin . v zmax. at i z z zmax . at i z z zkmax. at i z i rmax. at v r i rmax 2) at v r 2) body mark- (v) (v) (ma) ( ) (ma) ( ) (ma) ( a) (v) ( a) (v) ing tlz6v2 5.78 6.44 20 10 20 300 1 5 3.0 0.1 1.0 6v2 tlz6v2a 5.78 6.09 20 10 20 300 1 5 3.0 0.1 1.0 6a2 tlz6v2b 5.96 6.27 20 10 20 300 1 5 3.0 0.1 2.0 6b2 tlz6v2c 6.12 6.44 20 10 20 300 1 5 3.0 0.1 2.0 6c2 tlz6v8 6.29 7.01 20 8 20 150 0.5 2 3.5 0.1 2.0 6v8 tlz6v8a 6.29 6.63 20 8 20 150 0.5 2 3.5 0.1 2.0 6a8 tlz6v8b 6.49 6.83 20 8 20 150 0.5 2 3.5 0.1 3.0 6b8 tlz6v8c 6.66 7.01 20 8 20 150 0.5 2 3.5 0.1 3.0 6c8 tlz7v5 6.85 7.67 20 8 20 120 0.5 0.5 4.0 0.1 3.0 7v5 tlz7v5a 6.85 7.22 20 8 20 120 0.5 0.5 4.0 0.1 3.0 7a5 tlz7v5b 7.07 7.45 20 8 20 120 0.5 0.5 4.0 0.1 4.0 7b5 tlz7v5c 7.29 7.67 20 8 20 120 0.5 0.5 4.0 0.1 4.0 7c5 tlz8v2 7.53 8.45 20 8 20 120 0.5 0.5 5.0 0.1 4.0 8v2 tlz8v2a 7.53 7.92 20 8 20 120 0.5 0.5 5.0 0.1 4.0 8a2 tlz8v2b 7.78 8.19 20 8 20 120 0.5 0.5 5.0 0.1 4.0 8b2 tlz8v2c 8.03 8.45 20 8 20 120 0.5 0.5 5.0 0.1 4.0 8c2 tlz9v1 8.29 9.30 20 8 20 120 0.5 0.5 6.0 9v1 tlz9v1a 8.29 8.73 20 8 20 120 0.5 0.5 6.0 9a1 tlz9v1b 8.57 9.01 20 8 20 120 0.5 0.5 6.0 9b1 tlz9v1c 8.83 9.30 20 8 20 120 0.5 0.5 6.0 9c1 tlz10 9.12 10.44 20 8 20 120 0.5 0.2 7.0 10 tlz10a 9.12 9.59 20 8 20 120 0.5 0.2 7.0 10a tlz10b 9.41 9.90 20 8 20 120 0.5 0.2 7.0 10b tlz10c 9.70 10.20 20 8 20 120 0.5 0.2 7.0 10c tlz10d 9.94 10.44 20 8 20 120 0.5 0.2 7.0 10d tlz11 10.18 11.38 10 10 10 120 0.5 0.2 8.0 11 tlz11a 10.18 10.71 10 10 10 120 0.5 0.2 8.0 11a tlz11b 10.50 11.05 10 10 10 120 0.5 0.2 8.0 11b tlz11c 10.82 11.38 10 10 10 120 0.5 0.2 8.0 11c tlz12 11.13 12.35 10 12 10 110 0.5 0.2 9.0 12 tlz12a 11.13 11.71 10 12 10 110 0.5 0.2 9.0 12a tlz12b 11.44 12.03 10 12 10 110 0.5 0.2 9.0 12b tlz12c 11.74 12.35 10 12 10 110 0.5 0.2 9.0 12c tlz13 12.11 13.66 10 14 10 110 0.5 0.2 10 13 tlz13a 12.11 12.75 10 14 10 110 0.5 0.2 10 13a tlz13b 12.55 13.21 10 14 10 110 0.5 0.2 10 13b tlz13c 12.99 13.66 10 14 10 110 0.5 0.2 10 13c
tlz... vishay semiconductors rev. a4, 08-aug-02 4 (9) www.vishay.com document number 85635 type v zmin . v zmax. at i z z zmax . at i z z zkmax. at i z i rmax. at v r i rmax 2) at v r 2) body mark- (v) (v) (ma) ( ) (ma) ( ) (ma) ( a) (v) ( a) (v) ing tlz15 13.44 15.09 10 16 10 110 0.5 0.2 11 15 tlz15a 13.44 14.13 10 16 10 110 0.5 0.2 11 15a tlz15b 13.89 14.62 10 16 10 110 0.5 0.2 11 15b tlz15c 14.35 15.09 10 16 10 110 0.5 0.2 11 15c tlz16 14.80 16.51 10 18 10 150 0.5 0.2 12 16 tlz16a 14.80 15.57 10 18 10 150 0.5 0.2 12 16a tlz16b 15.25 16.04 10 18 10 150 0.5 0.2 12 16b tlz16c 15.69 16.51 10 18 10 150 0.5 0.2 12 16c tlz18 16.22 18.33 10 23 10 150 0.5 0.2 13 18 tlz18a 16.22 17.06 10 23 10 150 0.5 0.2 13 18a tlz18b 16.82 17.70 10 23 10 150 0.5 0.2 13 18b tlz18c 17.42 18.33 10 23 10 150 0.5 0.2 13 18c tlz20 18.02 20.72 10 28 10 200 0.5 0.2 15 20 tlz20a 18.02 18.96 10 28 10 200 0.5 0.2 15 20a tlz20b 18.63 19.59 10 28 10 200 0.5 0.2 15 20b tlz20c 19.23 20.22 10 28 10 200 0.5 0.2 15 20c tlz20d 19.72 20.72 10 28 10 200 0.5 0.2 15 20d tlz22 20.15 22.63 5 30 5 200 0.5 0.2 17 22 tlz22a 20.15 21.20 5 30 5 200 0.5 0.2 17 22a tlz22b 20.64 21.71 5 30 5 200 0.5 0.2 17 22b tlz22c 21.08 22.17 5 30 5 200 0.5 0.2 17 22c tlz22d 21.52 22.63 5 30 5 200 0.5 0.2 17 22d tlz24 22.05 24.85 5 35 5 200 0.5 0.2 19 24 tlz24a 22.05 23.18 5 35 5 200 0.5 0.2 19 24a tlz24b 22.61 23.77 5 35 5 200 0.5 0.2 19 24b tlz24c 23.12 24.31 5 35 5 200 0.5 0.2 19 24c tlz24d 23.63 24.85 5 35 5 200 0.5 0.2 19 24d tlz27 24.26 27.64 5 45 5 250 0.5 0.2 21 27 tlz27a 24.26 25.52 5 45 5 250 0.5 0.2 21 27a tlz27b 24.97 26.26 5 45 5 250 0.5 0.2 21 27b tlz27c 25.63 26.95 5 45 5 250 0.5 0.2 21 27c tlz27d 26.29 27.64 5 45 5 250 0.5 0.2 21 27d tlz30 26.99 30.51 5 55 5 250 0.5 0.2 23 30 tlz30a 26.99 28.39 5 55 5 250 0.5 0.2 23 30a tlz30b 27.70 29.13 5 55 5 250 0.5 0.2 23 30b tlz30c 28.36 29.82 5 55 5 250 0.5 0.2 23 30c tlz30d 29.02 30.51 5 55 5 250 0.5 0.2 23 30d
tlz... vishay semiconductors rev. a4, 08-jaug-02 5 (9) www.vishay.com document number 85635 type v zmin . v zmax. at i z z zmax . at i z z zkmax. at i z i rmax. at v r i rmax 2) at v r 2) body mark- (v) (v) (ma) ( ) (ma) ( ) (ma) ( a) (v) ( a) (v) ing tlz33 29.68 33.11 5 65 5 250 0.5 0.2 25 33 tlz33a 29.68 31.22 5 65 5 250 0.5 0.2 25 33a tlz33b 30.32 31.88 5 65 5 250 0.5 0.2 25 33b tlz33c 30.90 32.50 5 65 5 250 0.5 0.2 25 33c tlz33d 31.49 33.11 5 65 5 250 0.5 0.2 25 33d tlz36 32.14 35.77 5 75 5 250 0.5 0.2 27 36 tlz36a 32.14 33.79 5 75 5 250 0.5 0.2 27 36a tlz36b 32.79 34.49 5 75 5 250 0.5 0.2 27 36b tlz36c 33.40 35.13 5 75 5 250 0.5 0.2 27 36c tlz36d 34.01 35.77 5 75 5 250 0.5 0.2 27 36d tlz39 34.68 40.80 5 85 5 250 0.5 0.2 30 39 tlz39a 34.68 36.47 5 85 5 250 0.5 0.2 30 39a tlz39b 35.36 37.19 5 85 5 250 0.5 0.2 30 39b tlz39c 36.00 37.85 5 85 5 250 0.5 0.2 30 39c tlz39d 36.63 38.52 5 85 5 250 0.5 0.2 30 39d tlz39e 37.36 39.29 5 85 5 250 0.5 0.2 30 39e tlz39f 38.14 40.11 5 85 5 250 0.5 0.2 30 39f tlz39g 38.94 40.80 5 85 5 250 0.5 0.2 30 39g tlz43 40.00 45.00 5 90 5 0.2 33 43 tlz47 44.00 49.00 5 90 5 0.2 36 47 tlz51 48.00 54.00 5 100 5 0.2 39 51 tlz56 53.00 60.00 5 100 5 0.2 43 56 2) additional measurement please note: additional measurement of voltage group 9v1 to 75 i r at 95 % v zmin = < 35 na at t j 25 c
tlz... vishay semiconductors rev. a4, 08-aug-02 6 (9) www.vishay.com document number 85635 characteristics (t j = 25 c unless otherwise specified) 0 40 80 120 160 0 100 300 400 500 600 p total power dissipation ( mw ) tot t amb ambient temperature ( c ) 200 95 9602 200 figure 1. total power dissipation vs. ambient temperature 0 5 10 15 20 1 10 100 1000 v voltage change ( mv ) z v z z-voltage ( v ) 25 95 9598 i z =5ma t j =25 c figure 2. typical change of working voltage under operating conditions at t amb =25 c 60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v relative voltage change ztn t j junction temperature ( c ) 240 95 9599 v ztn =v zt /v z (25 c) tk vz =10 10 4 /k 8 10 4 /k 4 10 4 /k 6 10 4 /k 4 10 4 /k 2 10 4 /k 2 10 4 /k 0 figure 3. typical change of working voltage vs. junction temperature 0102030 5 0 5 10 15 tk temperature coefficient of v ( 10 /k ) vz v z z-voltage ( v ) 50 95 9600 40 z 4 i z =5ma figure 4. temperature coefficient of vz vs. zvoltage 0 5 10 15 0 50 100 150 200 c diode capacitance ( pf ) d v z z-voltage ( v ) 25 95 9601 20 t j =25 c v r =2v figure 5. diode capacitance vs. zvoltage 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i forward current ( ma ) f v f forward voltage ( v ) t j =25 c figure 6. forward current vs. forward voltage
tlz... vishay semiconductors rev. a4, 08-jaug-02 7 (9) www.vishay.com document number 85635 04 8 1216 20 95 9604 0 20 40 60 80 100 i z-current ( ma ) z v z z-voltage ( v ) p tot =500mw t amb =25 c figure 7. zcurrent vs. zvoltage 15 20 25 30 0 10 20 30 40 50 i z-current ( ma ) z v z z-voltage ( v ) 35 95 9607 p tot =500mw t amb =25 c figure 8. zcurrent vs. zvoltage 0 5 10 15 20 1 10 100 1000 r differential z-resistance ( ) z v z z-voltage ( v ) 25 95 9606 t j =25 c i z =1ma 5ma 10ma figure 9. differential zresistance vs. zvoltage 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( ms ) 95 9603 10 1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax t amb i zm =(v z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) figure 10. thermal response
tlz... vishay semiconductors rev. a4, 08-aug-02 8 (9) www.vishay.com document number 85635 dimensions in mm 96 12070 marking voltage group 2v4 2v4 2v4 2v4 remark: the zener voltage tlz2v4 or zener voltage group tlz2v4a is printet with max 3 digits 3 times on the surface. the marking should be readable at minimum 2 times. the third print is allowed to be incomplete due to tolerances in diameter of the glassbody. 2a4 2a4 2a4 2a4 tlz2v4a tlz2v4
tlz... vishay semiconductors rev. a4, 08-jaug-02 9 (9) www.vishay.com document number 85635 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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