preliminary solid state devices, inc. sff1310m sff1310z features: data sheet #: FT0004a maximum ratings ? rugged construction with polysilicon gate ? low rds (on) and high transconductance ? excellent high temperature stability ? very fast switching speed ? fast recovery and superior dv/dt performance ? increased reverse energy capability ? low input and transfer capacitance for easy paralleling ? hermetically sealed package ? tx, txv, and space level screening available ? replaces: smm40n20 type to-3 40 amps 200 volts 0.050 s n-channel power mosfet designer's data sheet 14830 valley view av. * la mirada, ca 90670 phone: (562) 404-7855 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scds for these devices should be reviewed by ssdi prior to release. package outline: to-3 pin out: drain: pin 1 source: pin 2 gate: pin 3 v gs 20 volts gate to source voltage i d 40 continuous drain current drain to source voltage v ds 200 amps volts thermal resistance, junction to case r 2 jc t op & t stg -55 to +150 operating and storage temperature o c o c/w 0.5 characteristic symbol v alue unit watts total device dissipation p d 250 190 @ tc = 25 o c @ tc = 55 o c
solid state devices, inc. sff1310m sff1310z preliminary 14830 valley view av. * la mirada, ca 90670 phone: (562) 404-7855 * fax: (562) 404-1773 electrical characteristics @ t j =25 o c (unless otherwise specified) v drain to source breakdown voltage (vgs =0 v, id =250 : a) - bv dss - rating symbol min typ max unit 200 s drain to source on state resistance (vgs = 10 v, 60% of rated id) - - r ds(on) 0.050 - - v gate threshold voltage (vds =vgs, id = 4ma) - v gs(th) 4.0 2.0 s( ) forward transconductance (vds > id(on) x rds (on) max, ids = 50% rated id) 25 - 20 : a zero gate voltage drain current (v gs = 0v) - - i dss - - gate to source leakage forward gate to source leakage reverse - - i gss +100 -100 - - at rated vgs total gate charge gate to source charge gate to drain charge vgs = 10 v 50% rated vds 50% rated id qg qgs qgd - - - 190 35 95 220 50 120 nsec turn on delay time rise time turn off delay time fall time vdd =50% rated vds 50% rated id rg = 6.2 s t d (on) tr t d (off) tf - - - - 28 38 110 30 35 40 130 35 v - v sd 1.50 - diode reverse recovery time reverse recovery charge - 1.5 t rr q rr 225 - - - t j =25 o c if = 10a di/dt = 100a/ : sec input capacitance output capacitance reverse transfer capacitance vgs =0 volts vds =25 volts f =1 mhz ciss coss crss - - - 4400 800 285 - - - pf nsec : c a on state drain current (vds > id(on) x rds(on) max, vgs = 10 v) - i d(on) - 50 diode forvard voltage (i s = rated i d , v gs = 0v, t j = 25 o c) nc na 250 1000 notes: g fs v ds = max rated voltage, t a = 25 o c v ds = 80% rated v ds , t a = 125 o c i d = 37.5a
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