TIPP110, tipp111, tipp112 npn silicon power darlingtons
1 may 1989 - revised september 2002 specifications are subject to change without notice. 20 w pulsed power dissipation 100 v capability 2 a continuous collector current 4 a peak collector current absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.32 w/c. 3. v ce = 20 v, i c = 1 a, p w = 10 ms, duty cycle 2%. rating symbol value unit collector-base voltage (i e = 0) TIPP110 tipp111 tipp112 v cbo 60 80 100 v collector-emitter voltage (i b = 0) TIPP110 tipp111 tipp112 v ceo 60 80 100 v emitter-base voltage v ebo 5v continuous collector current i c 2a peak collector current (see note 1) i cm 4a continuous base current i b 50 ma continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 0.8 w pulsed power dissipation (see note 3) p t 20 w operating junction temperature range t j -55 to +150 c storage temperature range t stg -55 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c lp package (top view) mdtrab e c b 1 2 3 obsolete
TIPP110, tipp111, tipp112 npn silicon power darlingtons 2
may 1989 - revised september 2002 specifications are subject to change without notice. notes: 4. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 5. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts and located within 3.2 mm from device body. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 10 ma (see note 4) i b = 0 TIPP110 tipp111 tipp112 60 80 100 v i ceo collector-emitter cut-off current v ce = 30 v v ce = 40 v v ce = 50 v v be =0 v be =0 v be =0 TIPP110 tipp111 tipp112 2 2 2 ma i cbo collector-base cut-off current v ce = 60 v v ce = 80 v v ce = 100 v i b =0 i b =0 i b =0 TIPP110 tipp111 tipp112 1 1 1 ma i ebo emitter cut-off current v eb = 5 v i c =0 2 ma h fe forward current transfer ratio v ce = 4 v v ce = 4 v i c =1a i c = 2 a (see notes 4 and 5) 1000 500 v ce(sat) collector-emitter saturation voltage i b = 8 ma i c = 2 a (see notes 4 and 5) 2.5 v v be base-emitter voltage v ce = 4 v i c = 2 a (see notes 4 and 5) 2.8 v v ec parallel diode forward voltage i e = 4 a i b = 0 (see notes 4 and 5) 3.5 v obsolete
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