sot23 pnp silicon planar medium power transistors issue 3 ? january 1996 j features * gain of 50 at i c =100ma partmarking detail - fmmta55 - 2h fmmta56 - 2g FMMTA55R - nb fmmta56r - mb absolute maximum ratings. parameter symbol fmmta55 fmmta56 unit collector-base voltage v cbo -60 -80 v collector-emitter voltage v ceo -60 -80 v emitter-base voltage v ebo -4 v continuous collector current i c -500 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). fmmta55 fmmta56 parameter symbol min. max. min. max. unit conditions. collector-emitter breakdown voltage v (br)ceo -60 -80 v i c =-1ma, i b =0* emitter-base breakdown voltage v (br)ebo -4 -4 v i e =-100 m a, i c =0 collector-emitter cut-off current i ces -0.1 -0.1 m a v ce =-60v collector-base cut-off current i cbo -0.1 -0.1 m a v cb =-80v, i e =0 v cb =-60v, i e =0 static forward current transfer ratio h fe 50 50 50 50 i c =-10ma, v ce =1v* i c =-100ma, v ce =1v* collector-emitter saturation voltage v ce(sat) -0.25 -0.25 v i c =-100ma, i b =-10ma* base-emitter turn-on voltage v be(on) -1.2 -1.2 v i c =-100ma, v ce =-1v* transition frequency f t 100 100 mhz i c =-10ma, v ce =-2v f=100mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% fmmta55 fmmta56 3 - 177 c b e sot23
|
