i c, nom 800 a i c 1200 a min. typ. max. - 1,7 2,15 v - 2 t.b.d. v insulation test voltage rms, f= 50hz, t= 1min. v isol na gate emitter leakage current gate emitter reststrom v ce = 0v, v ge = 20v, t vj = 25c i ges - - 5 i2t value i2t v ge(th) c ies gate threshold voltage v r = 0v, t p = 10ms, t vj = 125c isolations prfspannung grenzlastintegral - a v nf 57 - 7,7 - c 6,5 p tot a dc forward current +/- 20 3,9 v ges kw v gate emitter peak voltage t c = 25c; transistor repetitive peak collector current t p = 1ms, t c = 80c periodischer kollektor spitzenstrom dauergleichstrom i f 800 1600 h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung t c = 80c kollektor dauergleichstrom collector emitter voltage elektrische eigenschaften / electrical properties t vj = 25c t c = 25c dc collector current periodischer spitzenstrom gesamt verlustleistung total power dissipation gate emitter spitzenspannung v cesat charakteristische werte / characteristic values approved: sm tm; christoph lbke vorl?ufige daten preliminary data technische information / technical information ff800r12ke3 igbt-module igbt-modules v ces a i crm 1200 v 1600 repetitive peak forward current kv 5 5,8 transistor wechselrichter / transistor inverter 2,5 140 k a2s t p = 1ms i frm date of publication: 2002-07-30 kollektor emitter s?ttigungsspannung i c = 800a, v ge = 15v, t vj = 25c, collector emitter satration voltage i c = 800a, v ge = 15v, t vj = 125c, gate schwellenspannung i c = 32ma, v ce = v ge , t vj = 25c, eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v revision: 2.0 prepared by: mod-d2; mark mnzer kollektor emitter reststrom c res collector emitter cut off current i ces rckwirkungskapazit?t reverse transfer capacitance v ge = 0v, t vj = 25c, v ce = 1200v nf - 2,7 f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v - gateladung v ge = -15v...+15v; v ce =...v q g - gate charge ma - - 400 1 (8) db_ff800r12ke3_2.0.xls 2002-07-30
vorl?ufige daten preliminary data technische information / technical information ff800r12ke3 igbt-module igbt-modules min. typ. max. - 0,60 - s - 0,66 - s - 0,23 - s - 0,22 - s - 0,82 - s - 0,96 - s - 0,15 - s - 0,18 - s - 2,2 2,8 v - 2 - v - 260 - a - 400 - a - 37 - c - 90 - c - 9 - mj - 24 - mj - 3200 - a turn on energy loss per pulse ausschaltverlustenergie pro puls - v ge =15v, r gon =3,3 , t vj = 125c fallzeit (induktive last) fall time (inductive load) i sc e off i c = 800a, v cc = 600v, l = 90nh v ge =15v, r goff =0,39 , t vj = 125c i c = 800a, v cc = 600v v ge =15v, r goff =0,39 , t vj =25c v ge =15v, r goff =0,39 ,t vj = 125c e on i c = 800a, v cc = 600v, l = 90nh - nh stray inductance module modulindiktivit?t l ce - 20 turn off energy loss per pulse sc data v cc = 900v, v cemax = v ces - l ce di/dt kurzschlussverhalten t p 10s, v ge 15v, t vj 125c einschaltverlustenergie pro puls 0,18 q r ausschaltenergie pro puls reverse recovery energy e rec v r = 600v, v ge = -15v, t v j = 25c v r = 600v, v ge = -15v, t v j = 125c i f =i c , nom , -di f /dt= 3600a/s sperrverz?gerungsladung recoverred charge i f =i c , nom , -di f /dt= 3600a/s i c = 800a, v cc = 600v t d,off v ge =15v, r goff =0,39 , t vj =25c v ge =15v, r goff =0,39 ,t vj = 125c m charakteristische werte / characteristic values - - t f v ge =15v, r gon =3,3 t vj =25c v ge =15v, r gon =3,3 , t vj = 125c - t d,on i c = 800a, v cc = 600v t r abschaltverz?gerungszeit (ind. last) turn off delay time (inductive load) v r = 600v, v ge = -15v, t v j = 125c v f forward voltage rckstromspitze peak reverse recovery current i rm leitungswiderstand, anschluss-chip lead resistance, terminal-chip r cc/ee t c = 25c v r = 600v, v ge = -15v, t v j = 25c i f =i c , nom , -di f /dt= 3600a/s durchlassspannung charakteristische werte / characteristic values i f = i c, nom , v ge = 0v, t vj = 25c i f = i c, nom , v ge = 0v, t vj = 125c diode wechselrichter / diode inverter transistor wechselrichter / transistor inverter anstiegszeit (induktive last) rise time (inductive load) einschaltverz?gerungszeit (ind. last) turn on delay time (inductive load) v ge =15v, r gon =3,3 , t vj = 125c i c = 800a, v cc = 600v v ge =15v, r gon =3,3 t vj =25c v r = 600v, v ge = -15v, t v j = 25c v r = 600v, v ge = -15v, t v j = 125c 160 125 - mj - mj 2 (8) db_ff800r12ke3_2.0.xls 2002-07-30
vorl?ufige daten preliminary data technische information / technical information ff800r12ke3 igbt-module igbt-modules min. typ. max. r thjc - - 0,016 k/w - - 0,032 k/w -- 0,032 k/w - - 0,064 k/w - 0,006 - k/w - 0,012 - k/w r thck t vj op terminal connection torque m pro modul / per module pro zweig/ per arm; paste / grease =1w/m*k operation temperature maximum junction temperature lagertemperatur this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. mechanische eigenschaften / mechanical properties nm anzugsdrehmoment, mech. befestigung mounting torque nm 8-10 mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. c t stg -40 - storage temperature 125 c 150 -- -40 - 125 c betriebstemperatur thermische ei g enschaften / thermal p ro p erties thermal resistance, case to heatsink h?chstzul?ssige sperrschichttemp. bergangs w?rmewiderstand t vj max al 2 o 3 anzugsdrehmoment, elektr. anschlsse m 4,25 innere isolation schraube / screw m5 anschlsse / terminal m4 comperative tracking index case, see appendix geh?use, siehe anlage internal insulation cti >400 - m- 5,75 1,7 g weight 2,3 nm g 1500 gewicht anschlsse / terminal m8 innerer w?rmewiderstand thermal resistance, junction to case transistor, dc, pro modul / per module transistor, dc, pro zweig / per arm diode/diode, dc, pro modul / per module diode/diode, dc, pro zweig / per arm 32 mm creepage distance kriechstrecke 20 mm clearance luftstrecke 3 (8) db_ff800r12ke3_2.0.xls 2002-07-30
vorl?ufige daten preliminary data technische information / technical information ff800r12ke3 igbt-module igbt-modules ausgangskennlinie (typisch) i c = f(v ce ) output characteristic (typical) t v j = 125c output characteristic (typical) v ge = 15 v ausgangskennlinienfeld (typisch) i c = f(v ce ) 0 200 400 600 800 1000 1200 1400 1600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 200 400 600 800 1000 1200 1400 1600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 4 (8) db_ff800r12ke3_2.0.xls 2002-07-30
vorl?ufige daten preliminary data technische information / technical information ff800r12ke3 igbt-module igbt-modules bertragungscharakteristik (typisch) transfer characteristic (typical) i c = f(v ge ) v ce = 20 v durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward caracteristic of inverse diode (typical) 0 200 400 600 800 1000 1200 1400 1600 5678910111213 v ge [v] i c [a] tvj=25c tvj=125c 0 200 400 600 800 1000 1200 1400 1600 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8) db_ff800r12ke3_2.0.xls 2002-07-30
vorl?ufige daten preliminary data technische information / technical information ff800r12ke3 igbt-module igbt-modules schaltverluste (typisch) switching losses (typical) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) v ge =15v, r g on =3,3 , r g of f =0,39 , v ce =600v, t v j =125c schaltverluste (typisch) switching losses (typical) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge =15v, i c =800a, v ce =600v, t v j =125c 0 50 100 150 200 250 300 350 400 450 500 0 200 400 600 800 1000 1200 1400 1600 i c [a] e [mj] eon eoff erec 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 14 16 18 20 22 24 r g [ ] e [mj] eon eoff erec 6 (8) db_ff800r12ke3_2.0.xls 2002-07-30
vorl?ufige daten preliminary data technische information / technical information ff800r12ke3 igbt-module igbt-modules z thjc = f (t) 3 1,83 2,997e-02 transient thermal impedance 6,897e-01 transienter w?rmewiderstand sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, t v j =125c i r i [k/kw] : igbt i [s] : igbt r i [k/kw] : diode i [s] : diode 1 13,45 4,30 2,850e-03 18,37 4,452e-01 20,16 7,451e-02 21,17 2,647e-02 0,60 3,820e-03 2 16,12 5,634e-02 4 0,001 0,01 0,1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth : igbt zth : diode ic,chip 0 200 400 600 800 1000 1200 1400 1600 1800 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip 7 (8) db_ff800r12ke3_2.0.xls 2002-07-30
vorl?ufige daten preliminary data technische information / technical information ff800r12ke3 igbt-module igbt-modules geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_ff800r12ke3_2.0.xls 2002-07-30
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