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  139 ?2012 littelfuse, inc. speci?cations are subject to change without notice. please refer to www.littelfuse.com/spa for current information. tvs diode arrays (spa ? family of products) revision: march 20, 2012 splv2.8 series splv2.8 lightning surge protection - splv2.8 series description features applications the splv2.8 was designed to protect low voltage, cmos devices from esd and lightning induced transients. there is a compensating diode in parallel with the low voltage tvs to protect one unidirectional line or a high speed data pair when two devices are paired together. these robust structures can safely absorb repetitive esd strikes at 30kv (contact discharge) per the iec61000-4-2 standard and each structure can safely dissipate up to 40a (iec61000-4-5, t p =8/20s) with very low clamping voltages. pinout functional block diagram t &4% *&$  30kv contact, 30kv air t &'5 *&$ " (5/50ns) t -jhiuojoh *&$  40a (8/20s) t -pxdbqbdjubodfpgq' per line (pin 2 to 1) t -pxmfblbhfdvssfoupg 1a (max) at 2.8v t 4nbmm405 +&%&$ to-236) package saves board space t &uifsofu t 8"/-"/&rvjqnfou t 4xjudijoh4ztufnt t %ftlupqt 4fswfst boe notebooks t "obmph*oqvut t #btf4ubujpot 1 2 3 3 1 2 rohs pb green ethernet phy j1 j8 rj-4 5 connector nc nc application example see application example detail section on page 135 for more information splv2.8 series 2.8v 40a tvs array
?2012 littelfuse, inc. speci?cations are subject to change without notice. please refer to www.littelfuse.com/spa for current information. 140 tvs diode arrays (spa ? family of products) revision: march 20, 2012 splv2.8 series lightning surge protection - splv2.8 series absolute maximum ratings parameter rating units peak pulse power (t p =8/20s) 600 w peak pulse current (t p =8/20s) 40 a operating temperature -40 to 85 oc storage temperature -60 to 150 oc electrical characteristics (t op = 25c) parameter symbol test conditions min typ max units reverse standoff voltage v rwm i r 1a 2.8 v reverse breakdown voltage v br i t =2a 3.0 v snap back voltage v sb i t =50ma 2.8 v reverse leakage current i leak v r =2.8v (pin 2 or 3 to 1) 1 a clamping voltage 1 v c i pp =5a, t p =8/20s (pin 3 to 1) 5.7 7.0 v clamping voltage 1 i pp =24a, t p =8/20s (pin 3 to 1) 8.3 12.5 v clamping voltage 1 i pp =5a, t p =8/20s (pin 2 to 1) 7.0 8.5 v clamping voltage 1 i pp =24a, t p =8/20s (pin 2 to 1) 13.9 15.0 v dynamic resistance r dyn (v c2 - v c1 ) / (i pp2 - i pp1 ) (pin 2 to 1) 0.4 esd withstand voltage 1 v esd iec61000-4-2 (contact) 30 kv iec61000-4-2 (air) 30 kv diode capacitance 1 c d v r =0v, f=1mhz (pin 2 to 1) 2.0 2.5 pf caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied. note: 1 parameter is guaranteed by design and/or device characterization. figure 2: clamping voltage vs. i pp figure 1: capacitance vs. reverse voltage figure 3: pulse waveform 0.0 0. 5 1.0 1. 5 2.0 2. 5 3.0 3. 5 4.0 0.0 0. 5 1.0 1. 5 2.0 2. 5 dc bias (v) capacitance (pf) 0% 10% 20% 30% 40% 5 0% 60% 70% 80% 90% 100% 110 % 0.0 5 .0 10.0 1 5 .0 20.0 2 5 .0 30.0 time (s) percent of i pp 0 2 4 6 8 10 12 14 0 5 10 1 5 20 2 5 peak pulse current-i pp (a) clamping voltage-v c (v)
141 ?2012 littelfuse, inc. speci?cations are subject to change without notice. please refer to www.littelfuse.com/spa for current information. tvs diode arrays (spa ? family of products) revision: march 20, 2012 splv2.8 series splv2.8 lightning surge protection - splv2.8 series product characteristics lead plating matte tin lead material copper alloy lead coplanarity 0.0004 inches (0.102mm) substitute material silicon body material molded epoxy flammability ul 94 v-0 notes : 1. all dimensions are in millimeters 2. dimensions include solder plating. 3. dimensions are exclusive of mold ?ash & metal burr. 4. blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. package surface matte ?nish vdi 11-13. time temperature t p t l t s(max) t s(min) 25 t p t l t s time to peak temperature preheat p reheat ramp-up r amp-up ramp-down r amp-d o critical zone t l to t p c ritical zon e t l to t p re?ow condition pb C free assembly pre heat - temperature min (t s(min) ) 150c - temperature max (t s(max) ) 200c - time (min to max) (t s ) 60 C 180 secs average ramp up rate (liquidus) temp (t l ) to peak 3c/second max t s(max) to t l - ramp-up rate 3c/second max re?ow - temperature (t l ) (liquidus) 217c - temperature (t l ) 60 C 150 seconds peak temperature (t p ) 260 +0/-5 c time within 5c of actual peak temperature (t p ) 20 C 40 seconds ramp-down rate 6c/second max time 25c to peak temperature (t p ) 8 minutes max. do not exceed 260c soldering parameters data line protection of one unidirectional line ethernet phy j1 j8 rj-4 5 connector nc nc protection of one unidirectional data line is realized by connecting pin 3 to the protected line, and pins 1 and 2 to gnd. in this con?guration, the device presents a maximum loading capacitance of tens of picofarads. during positive transients, the internal tvs diode will conduct and steer current from pin 3 to 1 (gnd), clamping the data line at or below the speci?ed voltages for the device (see electrical characteristics section). for negative transients, the internal compensating diode is forward biased, steering the current from pin 2 (gnd) to 3. application example detail low capacitance protection of a high-speed data pair is realized by connecting two devices in antiparallel. as shown, pin 1 of the ?rst device is connected to d1 and pin 2 is connected to d2. additionally, pin 2 of the second device is connected to d1 and pin 1 is connected to d2. pin 3 must be nc (or not connected) for both devices. when the potential on d1 exceeds the potential on d2 (by the rated standoff voltage), pin 2 on the second device will steer current into pin 1. the compensating diode will conduct in the forward direction steering current into the avalanching tvs diode which is operating in the reverse direction. for the opposite transient, the ?rst device will behave in the same manner. in this two device arrangement, the total loading capacitance is two times the rated capacitance from pin 2 to pin 1 which will typically be much less than 10pf making it suitable for high- speed data pair such as 10/100/1000 ethernet. nc low capacitance protection of one high speed data pair d1 d2
?2012 littelfuse, inc. speci?cations are subject to change without notice. please refer to www.littelfuse.com/spa for current information. 142 tvs diode arrays (spa ? family of products) revision: march 20, 2012 splv2.8 series lightning surge protection - splv2.8 series package dimensions sot-23 package sot23-3 pins 3 jedec to-236 millimetres inches min max min max a 0.89 1.12 0.035 0.044 a1 0.01 0.1 0.0004 0.004 b 0.3 0.5 0.012 0.020 c 0.08 0.2 0.003 0.008 d 2.8 3.04 0.110 0.120 e 2.1 2.64 0.083 0.104 e1 1. 2 1. 4 0.047 0.055 e 0.95 bsc 0.038 bsc e1 1.90 bsc 0.075 bsc l1 0.54 ref 0.021 ref m 2.29 .90 n 0.95 0.038 o 0.78 0.30 typ p 0.78 0.30 typ b 3 e1 e 2 1 e e1 d a a1 c l1 m n o p recommended pad layout embossed carrier tape & reel speci?cation sot23-3 package [.009 .000 5 ] .229 .013 [.028] 1 3. 5 o max 8o max 9o max .71 [.081] 2.06 .99 [.039] .46 [.018] a 0 k 0 b 0 p0 p1 p d d1 e f w symbol millimetres inches min max min max a0 3.05 3.25 0.12 0.128 b0 2.67 2.87 0.105 0.113 d 3.9 4.1 0.153 0.161 d1 1.95 2.05 0.788 0.792 e 1.65 1.85 0.065 0.073 f 3.45 3.55 0.136 0.14 k0 1.12 1.32 0.476 0.484 p 0.95 1.05 0.037 0.041 p0 3.9 4.1 0.153 0.161 p1 1.6 0.063 w 7.9 8.3 0.311 0.327 ordering information part number package marking min. order qty. splv2.8htg sot23-3 u2.8 3000 part numbering system part marking system sp lv2.8 h t g series package h = sot23-3 t= tape & reel g= green silicon protection array (spa tm ) family of tvs diode arrays u2.8 u 2.8 product series u = splv2.8 voltage level


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