draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra 1. general description the tuner on main board ic (TEF6601t/v1) is an am/fm radio including pll tuning system. the system is designed in such a way, that it can be used as a world-wide tuner covering the common fm and am bands for radio reception. the device is controlled by the i 2 c-bus. besides the basic feat ure set it provides a good weak signal processing. 2. features 3. quick reference data TEF6601/v1 tuner on main board ic rev. 0.1 ? 25 august 2006 objective specification ? fm tuner for japan, europe and us reception ? am tuner for lw and mw reception ? am rf tracking selectivity ? integrated pll tuning system including automatic low/high side lo injection (not supported by /v1) ? fully integrated local oscillator ? no alignment needed ? very easy application on the mainboard ? no critical rf components ? fully integrated if filters and fm stereo decoder ? fully integrated fm noise blanker ? field strength (level), multipath (wam) and noise (usn) dependent stereo blend ? field strength (l evel), multipath (wam) and noise (usn) dependent high cut control (hcc) ? field strength (level), multipath (wam) and noise (usn) dependent soft mute ? single power supply table 1. quick reference data symbol parameter conditions min typ max unit i cc supply current at pins v cc1 and v cc2 and vregsup; t amb = 25 c 90 130 165 ma fm mode f rf rf frequency tuning range japan, europe, usa 76 - 108 mhz v i(sens) input sensitivity voltage signal to noise ratio = 26 db; f rf = 97.1 mhz -2- v free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 2 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 4. ordering information s/n ultimate signal to noise ratio v i(rf) = 1 mv; ? f = 22.5 khz 50 59 60 -db thd total harmonic distortion ? f = 75 khz, v i(rf) = 1 mv -0.40.8% image image rejection ratio f unwanted = f wanted 2 * f if 50 60 - db cs stereo channel separation v i(rf) = 1 mv; byte fh, chsep[2:0] = 100 26 40 - db am mode f rf rf frequency tuning range lw 144 - 288 khz mw 522 - 1710 khz v i(sens) input sensitivity voltage signal to noise ratio = 26 db; byte 3h, demp[1:0] = 10 f rf = 990 khz -34-db v s/n ultimate signal to noise ratio v i(rf) = 10 mv - 55 - db thd total harmonic distortion v i(rf) = 1 mv; m= 80% -1-% image image rejection ratio f unwanted = f wanted 2 * f if 40 55 - db table 1. quick reference data symbol parameter conditions min typ max unit table 2. ordering information type number package name description version TEF6601t/v1 so32 plastic small outline package; 32 leads; body width 7.5 mm sot287-1 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 3 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 5. block diagram fig 1. block diagram of TEF6601t/v1 signal improvement control stereo decoder high cut softmute noise blanker 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 26 25 24 27 28 29 30 31 32 fm tuner am tuner pll tuning system i 2 c bus output power supply TEF6601t/v1 amrfdec amrfin fmin2 fmin1 gndrf vcc2 amrfagc lout rout gndaud amifagc2 mpxin mpxout rssi xtal2 xtal1 gndd scl sda vref vregsup vcc1 gndana vcodec test amselin1 amselin2 amifagc1 amselout1 amselout2 pllref pll free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 4 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 6. pinning information 6.1 pinning 6.2 pin description fig 2. pin configuration d h e c 17 16 a 1 a 2 e pin 1 index amrfdec amrfin fmin2 fmin1 gndrf v cc2 amrfagc lout rout gndaud amifagc2 mpxin rssi xtal2 xtal1 gndd scl mpxout sda vref vregsup v cc1 gnd vcodec pll pllref test amselin1 amselin2 amifagc1 amselout1 amselout2 TEF6601t table 3. pin description symbol pin description amrfdec 1 am rf de-coupling amrfin 2 am rf single ended input fmin2 3 fm rf differential input 2 fmin1 4 fmrf differential input 1 gndrf 5 rf ground v cc2 6 supply voltage 2 amrfagc 7 am rf agc lout 8 audio left out rout 9 audio right out gndaud 10 audio ground amifagc2 11 am if agc 2 mpxin 12 mpx and am audio input to stereo decoder mpxout 13 mpx and am audio output from tuner part rssi 14 received signal strength indicator xtal2 15 4 mhz crystal oscillator pin 2 xtal1 16 4 mhz crystal oscillator pin 1 gndd 17 digital ground scl 18 i 2 c-bus clock input free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 5 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 7. functional description 7.1 fm tuner the rf input signal is mixed to a low if with inherent image suppression. the if signal is filtered and demodulated. the complete signal path is fully integrated. 7.2 am tuner the rf signal is filtered and mixed to a lo w if with inherent image suppression. the if signals are filtered and demodulated. t he signal path is highly integrated. 7.3 pll tuning system the pll tuning system includes a fully integr ated vco. to avoid problems with unwanted signals on image side the receiver controls automatically high- or low- side injection (not supported by /v1) . 7.4 fm stereo decoder the mpx signal from the fm tuner is translated by the stereo decoder into a left and right audio channel. good channel separation is achieved with no alignment required. 7.5 weak signal processi ng and noise blanker the reception quality of the station received is measured by a combination of detectors; field strength (level), multipath (wam) and noise (usn). the audio processing functions of soft mute, high cut control and mono-stereo blend are controlled accordingly to maintain the best possible audio quality in case of poor signal conditions. sda 19 i 2 c-bus data input and output vref 20 reference voltage de-coupling vregsup 21 supply voltage internal voltage regulators v cc1 22 supply voltage 1 gnd 23 ground vcodec 24 de coupling for vco supply voltage pll 25 pll tuning voltage pllref 26 pll reference voltage test 27 test pin; leave open in normal operation amselin1 28 am selectivity input 1 amselin2 29 am selectivity input 2 amifagc1 30 am if agc 1 amselout1 31 am sele ctivity output 1 amselout2 32 am sele ctivity output 2 table 3. pin description symbol pin description free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 6 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic audio disturbances like e.g. ignition noise are suppressed by the noise blanker circuit, using ultrasonic noise detection on mpx and spike detection on the level signal. 7.6 i 2 c-bus transceiver the ic can be controlled by means of the i 2 c-bus. the ?fast mode? i 2 c-bus allows up to 400 kbit/s bus speed. 8. i 2 c-bus protocol 8.1 read mode fig 3. write mode ack-s ack-s data slave address w data transferred (n bytes + acknowledge) 001aad05 1 p s ack-s msa mode fig 4. read mode data ack-s ack-m data na slave address r 001aad04 9 p s data transferred (n ? 1 bytes + acknowledge) table 4. description of i 2 c-bus format code description s start condition slave address w 1100 0000b slave address r 1100 0001b ack-s acknowledge generated by the slave ack-m acknowledge generated by the master na not acknowledge generated by the master mode mode and subaddress byte data data byte p stop condition table 5. read mode - status (read byte 0h) bit allocation 7 6 5 4 3 2 1 0 qrs1 qrs0 por stin - - tas1 tas0 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 7 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic [1] when pll tuning is ready the quality detectors are rese t for fastest result. in fm mode the first reliable quality result of level, usn and wam is available from 1 ms after reset. in am mode the first level result is available from 1 ms, gradually changing from peak level toward s average level realizing the maximum attenuation of am modulation influence from 32 ms. the quality result of an af-update tuning is stored and can be read at any time later. table 6. read mode - status (read byte 0h) bit description bit symbol description 7 to 6 qrs[1:0] quality read status: [1] 00 = no quality data available (tuning is in progress or quality data is settling) 01 = quality data (level, usn and wam) availabl e; for if counter check the ifcs status 10 = af-update quality data available of level, usn, wam and if counter 5 por power on reset indicator; 0 = standard operation 1 = power-on or power dip detected. i 2 c settings are lost 4 stin stereo indicator: 0 = no pilot detected 1 = stereo pilot detected 3 to 2 - reserved 1 to 0 tas[1:0] tuning action state: 00 = tuning not active, not muted 01 = muting in progress 10 = tuning in progress 11 = tuning ready and muted table 7. read mode - level (r ead byte 1h) bit allocation 7 6 5 4 3 2 1 0 lev7 lev6 lev5 lev4 lev3 lev2 lev1 lev0 table 8. read mode - level (r ead byte 1h) bit description bit symbol description 7 to 0 lev[7:0] level detector (rssi) output signal via fast level detector timing. 0 to 255 = 0.25 v to 4.25 v table 9. read mode - usn_wam (read byte 2h) bit allocation 7 6 5 4 3 2 1 0 usn3 usn2 usn1 usn0 wam3 wam2 wam1 wam0 table 10. read mode - usn_wam (read byte 2h) bit description bit symbol description 7 to 4 usn[3:0] fm ultrasonic noise: ultrasonic noise content (usn) 3 to 0 wam[3:0] fm wide band am (multipath): 0 to 15 = no disturbance to high disturbance, 0 to 15 = 0 to 100% am at 20 khz wide band am content (wam) free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 8 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic [1] when pll tuning is ready the if counter and other qualit y detectors are reset for fastest result. the first if counter result is available from 2 ms after reset. fu rther results are available from 8 ms and 32 ms after reset, reducing the influence of fm modulation on the coun ter result. later counter results are available at a count time of 32 ms. table 11. read mode - ifcounter (read byte 3h) bit allocation 7 6 5 4 3 2 1 0 ifcs1 ifcs0 ifcn ifc4 ifc3 ifc2 ifc1 ifc0 table 12. read mode - ifcounter (read byte 3h) bit description bit symbol description 7 to6 ifcs[1:0] if counter status [1] 00 = no first counter result available 01 = first counter result available from 2 ms count time 10 = first counter result available from 8 ms count time 11 = counter result available from 32 ms count time 5 ifcn if count result negative 0 = positive rf frequency error 1 = negative rf frequency error 4 to 0 ifc[4:0] if counter result, see table 13. table 13. if counter result ifc4 ifc3 ifc2 ifc1 ifc0 frequency error in fm frequency error in am 000000 khz to 5 khz 0 khz to 0.5 khz 000015 khz to 10 khz 0.5 khz to 1 khz 0001010 khz to 15 khz 1 khz to 1.5 khz 0001115 khz to 20 khz 1.5 khz to 2 khz 0010020 khz to 25 khz 2 khz to 2.5 khz 11110 150 khz to 155 khz 15 khz to 15.5 khz 11111> 155 khz > 15.5 khz table 14. read mode - (read byte 4h) bit allocation 7 6 5 4 3 2 1 0 - - - - - id2 id1 id0 table 15. read mode - (read byte 4h) bit description bit symbol description 7 to 3 not used 2 to 0 id[2:0] device type identification 000 = TEF6601t/v1 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 9 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 8.2 write mode table 16. write mode - mode bit allocation 7 6 5 4 3 2 1 0 mode2 mode1 mode0 0 sa3 sa2 sa1 sa0 table 17. write mode - mode bit description bit symbol description 7 to 5 mode[2:0] mode; see ta b l e 1 8 4 - not used, must be set to logic 0 3 to 0 sa[3:0] subaddress table 18. tuning action modes mode2 mode1 mode0 symbol description 0 0 0 standard write without tuning action 0 0 1 preset tune to new program with short mute time; see figure 5 0 1 0 search tune to new program and stay muted; see figure 6 and figure 7 0 1 1 af-update tune to af program, check af quality and tune back to main program; see figure 8 and figure 9 1 0 0 af-jump tune to af program in minimum mute time; see figure 10 and figure 11 1 0 1 af-check tune to af program and stay muted; see figure 12 , figure 13 and figure 14 1 1 0 mirror test check current image situation and select injection for best result; see figure 15 1 1 1 end end, release mute from search mode or af-check mode free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 10 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 5. preset mode tuning i 2 c-bus p freq x freq 0 freq 1 preset freq 1 freq 0 freq 1 1 ms tuning freq 0 preload swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 00 01 10 11 00 audio quality detectors continuous reset continuous weak signal timing user defined fast settling < 30 ms user defined level usn wam continuous result freq 0 freq 0 hold continuous result freq 1 if count result freq 0 freq 0 hold 2 ms freq 1 8 ms freq 1 32 ms freq 1 reset 2 ms 8 ms 32 ms 32 ms 32 ms 1 ms mute count count count 0 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 11 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 6. search mode tuning i 2 c-bus p freq x freq 0 freq 1 search freq 1 freq 0 freq 1 1 ms tuning freq 0 preload swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 00 01 10 11 audio quality detectors continuous reset continuous weak signal timing user defined fast settling < 30 ms level usn wam continuous result freq 0 freq 0 hold continuous result freq 1 if count result freq 0 freq 0 hold 2 ms freq 1 8 ms freq 1 32 ms freq 1 reset 2 ms 8 ms 32 ms 32 ms mute count count count 0 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 12 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 7. search mode after search, end tuning i 2 c-bus p freq x freq 0 freq 1 search freq 0 freq 1 tuning freq 0 preload swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 11 10 00 11 audio quality detectors continuous reset continuous weak signal timing user defined fast settling < 30 ms level usn wam continuous freq 0 freq 0 hold continuous result freq 1 if count result freq 0 freq 0 hold 2 ms freq 1 8 ms freq 1 32 ms freq 1 reset 2 ms 8 ms 32 ms 32 ms 1 ms mute count count count 0 p end f1 count free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 13 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 8. af-update mode tuning i 2 c-bus p freq x freq 0 freq 1 afu freq 1 freq 0 freq 1 1 ms tuning freq 0 preload swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 00 01 10 11 00 audio quality detectors continuous reset continuous weak signal timing user defined user defined level usn wam continuous result freq 0 freq 0 hold continuous freq 1 hold until read if count result freq 0 freq 0 hold 2 ms result freq 1 hold until read reset 1 ms mute count count 0 2 ms tuning hold 10 swap freq 0 freq 1 freq 0 freq 1 freq 0 reset 2 ms reset count 2 ms 8 ms p read continuous result freq 0 result freq 0 continuous free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 14 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 9. af-update mo de after check tuning i 2 c-bus p freq x freq 0 freq 1 check freq 1 freq 0 freq 1 1 ms tuning freq 0 preload swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 00 01 10 11 audio quality detectors continuous reset continuous weak signal timing user defined level usn wam continuous result freq 0 freq 0 hold continuous result freq 1 if count result freq 0 freq 0 hold 2 ms freq 1 reset 2 ms 8 ms mute count count count 0 hold p freq 0 afu tuning 1 ms f0 freq 0 freq 1 freq 1 freq 0 10 00 reset continuous user defined freq 1 hold freq 1 hold until i 2 c-bus read 8 ms freq 1 hold swap freq 1 hold until i 2 c-bus read 2 ms reset freq 0 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 15 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 10. jump mode tuning i 2 c-bus p freq x freq 0 freq 1 jump freq 1 freq 0 freq 1 1 ms tuning freq 0 preload swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 00 01 10 00 audio quality detectors continuous reset continuous weak signal timing user defined user defined level usn wam continuous result freq 0 freq 0 hold continuous result freq 1 if count result freq 0 freq 0 hold 2 ms freq 1 8 ms freq 1 32 ms freq 1 reset 2 ms 8 ms 32 ms 32 ms mute count count count 0 1 ms hold free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 16 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 11. jump mode after check tuning i 2 c-bus p freq x freq 0 freq 1 check freq 1 freq 0 freq 1 1 ms tuning freq 0 preload swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 00 01 10 11 audio quality detectors continuous reset continuous weak signal timing user defined level usn wam continuous result freq 0 freq 0 hold continuous result freq 1 if count result freq 0 freq 0 hold 2 ms freq 1 8 ms freq 1 reset 2 ms 8 ms mute count count count 0 hold p freq 0 jump tuning 1 ms f0 freq 0 freq 1 freq 1 freq 0 10 00 reset continuous user defined freq 1 hold continuous result freq 0 8 ms freq 1 hold 2 ms 0 swap freq 0 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 17 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 12. check mode tuning i 2 c-bus p freq x freq 0 freq 1 check freq 1 freq 0 freq 1 1 ms tuning freq 0 preload swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 00 01 10 11 audio quality detectors continuous reset continuous weak signal timing user defined level usn wam continuous result freq 0 freq 0 hold continuous result freq 1 if count result freq 0 freq 0 hold 2 ms freq 1 8 ms freq 1 32 ms freq 1 reset 2 ms 8 ms 32 ms 32 ms mute count count count 0 hold free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 18 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 13. check mode after check, end tuning i 2 c-bus p freq x freq 1 check f1 freq 0 freq 1 tuning freq 0 swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 11 00 10 11 audio quality detectors continuous reset continuous weak signal timing level usn wam continuous freq 0 freq 0 hold continuous result freq 1 if count result freq 0 freq 0 hold 2 ms freq 1 8 ms freq 1 32 ms freq 1 reset 2 ms 8 ms 32 ms 32 ms mute count count count 0 hold p end user defined 1 ms count free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 19 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 14. check mode after check, preset tuning i 2 c-bus p freq x freq 1 check f1 freq 0 freq 1 tuning freq 0 swap time buffer register control register freq 0 freq 1 freq 0 freq 1 tas 11 11 10 10 audio quality detectors continuous reset continuous weak signal timing level usn wam continuous freq 0 freq 0 hold continuous result freq 1 if count result freq 0 freq 0 hold 2 ms freq 1 8 ms freq 1 reset 2 ms 8 ms mute count count count 0 hold user defined 1 ms p freq 2 preset tuning 32 ms 11 preload freq 1 freq 2 freq 1 freq 1 freq 2 00 fast settling < 30 ms freq 1 hold 0 2 ms 8 ms 32 ms 32 ms freq 2 freq 2 freq 2 f2 reset continuous freq 1 hold reset count continuous result freq 2 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 20 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic fig 15. image test (not supported by /v1) tuning i 2 c-bus p freq x image test freq 0 1 ms tuning time buffer register control register freq 0 freq 0 freq 0 freq 0 tas 00 01 10 00 audio quality detectors continuous reset continuous weak signal timing user defined hold user defined level usn wam continuous result freq 0 freq 0 hold continuous result freq 0 if count result freq 0 freq 0 hold 2 ms freq 0 8 ms freq 0 32 ms freq 0 reset 2 ms 8 ms 32 ms 32 ms 1 ms mute count count count 0 table 19. write mode - tune r0 (byte 0h) bit allocation bit 7 6 5 4 3 2 1 0 symbol 0 0 band 0 freq11 freq10 freq9 freq8 reset 10110 table 20. write mode - tune r1 (byte 1h) bit allocation bit 7 6 5 4 3 2 1 0 symbol freq7 freq6 freq5 freq4 freq3 freq2 freq1 freq0 reset 11111010 table 21. write mode - tuner0 (byte 0h) bit description bit symbol description 7 to 6 - not used, must be set to logic 0 5 band frequency band; see table 23. [1] 4 - not used, must be set to logic 0 3 to 0 freq[11:8] upper byte of tuning frequency word; see table 24. [1] free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 21 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic [1] for a correct tuning result a change in the band or freq setting should always be combined with a tuning action of modes 001 to 101 table 22. write mode - tuner1 (byte 1h) bit description bit symbol description 7 to 0 freq[7:0] lower byte of tuning frequency word; see table 24. [1] table 23. decoding of band bits band description 0 am: lw and mw 1fm table 24. tuning frequency band freq[12:0] value reception frequency frequency correlation step am, lw and mw 144 to 1720 144 khz to 1720 khz freq = f rf [khz] 1 khz fm 1520 to 2160 76 mhz to 108 mhz freq = f rf [mhz] * 20 50 khz table 25. write mode - tune r2 (byte 2h) bit allocation bit 7 6 5 4 3 2 1 0 symbol rfagc1rfagc0000000 reset 00 table 26. write mode - tuner2 (byte 2h) bit description bit symbol description 7 to 6 rfagc[1:0] am rf agc sensitivity control: fm rf agc sensitivity control: 00 = default am lna agc threshold 00 = agc threshold reduced by 6 db 01 = agc threshold reduced by 2 db 01 = agc threshold reduced by 4 db 10 = agc threshold reduced by 4 db 10 = agc threshold reduced by 2 db 11 = agc threshold reduced by 6 db 11 = standard fm rf agc threshold 5 to 4 inj[1:0] lo injection: 00 = automatic (standard control) (not supported by /v1) 01 = high injection 10 = low injection 3 to 0 - not used, must be set to logic 0 table 27. write mode - tune r3 (byte 3h) bit allocation bit 7 6 5 4 3 2 1 0 symbol nbs1 nbs0 locut mono demp1 demp0 0 outa reset 100000 0 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 22 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic table 28. write mode - tuner3 (byte 3h) bit description bit symbol description 7 to 6 nbs[1:0] fm noise blanker sensitivity control: 00 = fm noise blanker off 01 to 11 = low to high fm noise blanker sensitivity 5 locut control of audio high pass filter: 0 = no limitation (-3 db at 7 hz) 1 = high pass function (-3 db at 100 hz); only for am use 4 mono mono/stereo switch: 0 = fm stereo enabled 1 = fm stereo disabled (forced mono) 3 to 2 demp[1:0] de-emphasis setting: 00 = 50 s de-emphasis 01 = 75 s de-emphasis 10 = 103 s low pass 1 - not used, must be set to logic 0 0 outa audio output gain: 0 = low audio gain at lout and rout 1 = high audio gain at lout and rout table 29. write mode - softmu te0 (byte 4h) bit allocation bit 7 6 5 4 3 2 1 0 symbol 0 0 0 mat2 mat1 mat0 mrt1 mrt0 reset 00000 table 30. write mode - softmu te0 (byte 4h) bit description bit symbol description 7 to 5 - not used, must be set to logic 0 4 to 2 mat[2:0] softmute slow attack time, see table 31. 1 to 0 mrt[1:0] softmute slow recovery time: 00 = 1 times attack time 01 = 2 times attack time 10 = 4 times attack time 11 = 8 times attack time according table 31. table 31. softmute attack time mat2 mat1 mat0 softmute attack time 000125 ms 001250 ms 0 1 0 0.5 s 0111 s 1002 s free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 23 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 1014 s 1108 s 11116 s table 31. softmute attack time mat2 mat1 mat0 softmute attack time table 32. write mode - softmu te1 (byte 5h) bit allocation bit 7 6 5 4 3 2 1 0 symbol mfol msol 0 mst2 mst1 mst0 msl1 msl0 reset 00 00000 table 33. write mode - softmu te1 (byte 5h) bit description bit symbol description 7 mfol softmute fast on level: 0 = no fast control on level 1 = fast control on level active 6 msol softmute slow on level 0 = no slow control on level (not supported by /v1) 1 = slow control on level active 5 - not used, must be set to logic 0 4 to 2 mst[2:0] softmute start on level: 000 to 111 = high to low threshold of weak signal softmute control 1 to 0 msl[1:0] softmute slope on level: 00 to 11 = low to high steepness of slope of weak signal softmute control table 34. write mode - softmute 2_fm (byte 6h) bit allocation bit 7 6 5 4 3 2 1 0 symbol mfon mson mns1 mns0 mfom msom mms1 mms0 reset 00000000 table 35. write mode - softmute 2_fm (byte 6h) bit description bit symbol description 7 mfon softmute fast on noise (usn): 0 = no fast control on noise (usn) 1 = fast control on noise (usn) active 6 mson softmute slow on noise (usn): 0 = no slow control on noise (usn) 1 = slow control on noise (usn) active 5 to 4 mns[1:0] sensitivity of softmute on noise 00 to 11 = weak to strong softmute control by fm ultrasonic noise (usn) 3 mfom softmute fast on multipath (wam) 0 = no fast control on multipath (wam) 1 = fast control on multipath (wam) active free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 24 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 2 msom softmute slow on multipath (wam) 0 = no slow control on multipath (wam) 1 = slow control on multipath (wam) active 1 to 0 mms[1:0] sensitivity of softmute on multipath (wam) 00 to 11 = weak to strong softmu te control by fm multipath (wam) table 35. write mode - softmute 2_fm (byte 6h) bit description bit symbol description table 36. write mode - softmute2_am (byte 6h) bit allocation bit 7 6 5 4 3 2 1 0 symbol 0 0 0 mlim4 mlim3 mlim2 mlim1 mlim0 reset 00000 table 37. write mode - softmute 2_am (byte 6h) bit description bit symbol description 7 to 5 - not used, must be set to logic 0 4 to 0 mlim[4:0] softmute limit 00000 to 11110 = softmute control limited at 0 db to 30 db the softmute control can be limited to t he point at which natural softmute starts table 38. write mode - hig hcut0 (byte 7h) bit allocation bit 7 6 5 4 3 2 1 0 symbol 0 0 hlim hat2 hat1 hat0 hrt1 hrt0 reset 000000 table 39. write mode - highcut 0 (byte 7h) bit description bit symbol description 7 to 6 - not used, must be set to logic 0 5 hlim limitation of highcut contro l on level, noise and multipath 0 = highcut limit at 165 s, -10 db at 10 khz (for 50 s de-emphasis) 1 = highcut limit at 103 s, -6 db at 10 khz (for 50 s de-emphasis) 4 to 2 hat[2:0] highcut slow attack time, see table 40. 1 to 0 hrt[1:0] highcut slow recovery time: 00 = 1 times attack time 01 = 2 times attack time 10 = 4 times attack time 11 = 8 times attack time according table 40. table 40. highcut attack time hat2 hat1 hat0 highcut attack time 000125 ms 001250 ms 0 1 0 0.5 s 0111 s free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 25 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 1002 s 1014 s 1108 s 11116 s table 40. highcut attack time hat2 hat1 hat0 highcut attack time table 41. write mode - hig hcut1 (byte 8h) bit allocation bit 7 6 5 4 3 2 1 0 symbol hfol hsol 0 hst2 hst1 hst0 hsl1 hsl0 reset 00 00000 table 42. write mode - highcut 1 (byte 8h) bit description bit symbol description 7 hfol highcut fast on level: 0 = no fast control on level 1 = fast control on level active 6 hsol highcut slow on level 0 = no slow control on level (not supported by /v1) 1 = slow control on level active 5 - not used, must be set to logic 0 4 to 2 hst[2:0] highcut start on level: 000 to 111 = high to low threshold of weak signal highcut control 1 to 0 hsl[1:0] highcut slope on level: 00 to 11 = low to high steepness of slope of weak signal highcut control table 43. write mode - hig hcut2 (byte 9h) bit allocation bit 7 6 5 4 3 2 1 0 symbol hfon hson hns1 hns0 hfom hsom hms1 hms0 reset 00000000 table 44. write mode - highcut 2 (byte 9h) bit description bit symbol description 7 hfon highcut fast on noise (usn): 0 = no fast control on noise (usn) 1 = fast control on noise (usn) active 6 hson highcut slow on noise (usn): 0 = no slow control on noise (usn) 1 = slow control on noise (usn) active 5 to 4 hns[1:0] sensitivity of highcut on noise 00 to 11 = weak to strong highcut control by fm ultrasonic noise (usn) free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 26 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 3 hfom highcut fast on multipath (wam) 0 = no fast control on multipath (wam) 1 = fast control on multipath (wam) active 2 hsom highcut slow on multipath (wam) 0 = no slow control on multipath (wam) 1 = slow control on multipath (wam) active 1 to 0 hms[1:0] sensitivity of highcut on multipath (wam) 00 to 11 = weak to strong highcu t control by fm multipath (wam) table 44. write mode - highcut 2 (byte 9h) bit description bit symbol description table 45. write mode - ster eo0 (byte ah) bit allocation bit 7 6 5 4 3 2 1 0 symbol 0 0 0 sat2 sat1 sat0 srt1 srt0 reset 00000 table 46. write mode - stereo0 (byte ah) bit description bit symbol description 7 to 5 - not used, must be set to logic 0 4 to 2 sat[2:0] stereo blend slow attack time, see table 47. 1 to 0 srt[1:0] stereo blend slow recovery time: 00 = 1 times attack time 01 = 2 times attack time 10 = 4 times attack time 11 = 8 times attack time according table 47. table 47. stereo blend attack time sat2 sat1 sat0 stereo blend attack time 000125 ms 001250 ms 0 1 0 0.5 s 0111 s 1002 s 1014 s 1108 s 11116 s table 48. write mode - ster eo1 (byte bh) bit allocation bit 7 6 5 4 3 2 1 0 symbol sfol ssol 0 sst2 sst1 sst0 ssl1 ssl0 reset 00 00000 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 27 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic table 49. write mode - stereo1 (byte bh) bit description bit symbol description 7 sfol stereo blend fast on level: 0 = no fast control on level 1 = fast control on level active 6 ssol stereo blend slow on level 0 = no slow control on level (not supported by /v1) 1 = slow control on level active 5 - not used, must be set to logic 0 4 to 2 sst[2:0] stereo blend start on level: 000 to 111 = high to low threshold of weak signal stereo blend control 1 to 0 ssl[1:0] stereo blend slope on level: 00 to 11 = low to high steepness of sl ope of weak signal stereo blend control table 50. write mode - ster eo2 (byte ch) bit allocation bit 7 6 5 4 3 2 1 0 symbol sfon sson sns1 sns0 sfom ssom sms1 sms0 reset 00000000 table 51. write mode - stereo2 (byte ch) bit description bit symbol description 7 sfon stereo blend fast on noise (usn): 0 = no fast control on noise (usn) 1 = fast control on noise (usn) active 6 sson stereo blend slow on noise (usn): 0 = no slow control on noise (usn) 1 = slow control on noise (usn) active 5 to 4 sns[1:0] sensitivity of stereo blend on noise 00 to 11 = weak to strong stereo blend control by fm ultrasonic noise (usn) 3 sfom stereo blend fast on multipath (wam) 0 = no fast control on multipath (wam) 1 = fast control on multipath (wam) active 2 ssom stereo blend slow on multipath (wam) 0 = no slow control on multipath (wam) 1 = slow control on multipath (wam) active 1 to 0 sms[1:0] sensitivity of st ereo blend on multipath (wam) 00 to 11 = weak to strong highcu t control by fm multipath (wam) table 52. write mode - level_a lign (byte eh) bit allocation bit 7 6 5 4 3 2 1 0 symbol levat leva6 leva5 leva4 leva3 leva2 leva1 leva0 reset 01000000 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 28 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic [1] the level correction is included in the weak signal processing and the level read data via i 2 c-bus. the level correction is not included in the analog voltage at pin rssi 9. limiting values table 53. write mode - level_a lign (byte eh) bit description bit symbol description 7 levat level alignment test signal 0 = normal operation 1 = insertion of level alignment test signal 6 to 0 leva[6:0] level alignment 0 to 127 = correction of level voltage by -1 v to +1 v [1] table 54. write mode - am_l na (byte fh) bit allocation bit 7 6 5 4 3 2 1 0 symbol 0 0 alaft1 alaft0 alafm chsep2 chsep1 chsep0 reset 111100 table 55. write mode - am_lna (byte fh) bit description bit symbol description 7 to 6 - not used, must be set to logic 0 5 to 4 alaft[1:0] am lna agc step control 00 = no fast control of linea r agcs at am lna agc step 01 = 2 ms fast control of li near agcs at am lna agc step 10 = 4 ms fast control of li near agcs at am lna agc step 11 = 7 ms fast control of li near agcs at am lna agc step 3alafmagc mute 0 = no mute during fast control of linear agcs at am lna agc step 1 = mute during fast control of linear agcs at am lna agc step 2 to 0 chsep[1:0] stereo chan nel separation alignment 100 = default setting (no alignment) 000 to 111 optional channel separation table 56. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc analog supply voltage at pins v cc1 and v cc2 -0.3 10 v ? v cc voltage difference between v cc1 and v cc2 -0.3 0.3 v v i voltage on pins sda and scl -0.5 5.5 tbf v v regsup analog supply voltage at pin vregsup -0.3 v cc v v n dc voltage at all other pins -0.3 v cc v free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 29 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic [1] for use of full operating supply voltage range and operating temperature range, the thermal resistance r th should be less than 54 k/w. [2] human body model: c = 100 pf; r = 1.5 k ? [3] machine model: c = 200 pf; l = 0.75 h; r = 10 ? 10. thermal characteristics [1] single layer board 70 mm by 100 mm with a copper thickness of 35 m and a copper area coverage of 20%. 11. static characteristics v fmin rf input voltage between pins fmin1 and fmin2 (peak value) -6v v amrfin rf input voltage at pin amrfin (peak value) -3v t stg storage temperature -40 150 c t amb ambient temperature [1] -40 85 c t j(max) maximum junction temperature - 150 c v esd electrostatic discharge voltage [2] -2000 2000 v [3] -200 200 v table 56. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit table 57. thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient [1] 45 k/w table 58. static characteristics v cc = 8.5 v; t amb = 25 c; unless otherwise specified symbol parameter conditions id min typ max unit v cc supply voltage at pins v cc1 and v cc2 003 88.59v supply current in fm mode i cc supply current into pins v cc1 , v cc2 and vregsup t amb = -40 c 611 -tbf220ma t amb = 25 c 624 90 130 165 ma t amb = 85 c 625 90 tbf 155 ma supply current in am mode i cc supply current into pins v cc1 , v cc2 and vregsup t amb = -40 c 612 -tbf220ma t amb = 25 c 626 90 130 165 ma t amb = 85 c 627 90 tbf 155 ma power-on reset v p(por) power-on reset supply voltage reset at power-on 035 6.5 6.7 6.9 v free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 30 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic [1] sda and scl high and low internal thresholds are specified according to an i 2 c-bus voltage range from 2.5 v to 3.3 v including i 2 c-bus voltage tolerances of 10%. the i 2 c-bus interface tolerates also sda and scl signals from a 5 v bus, but does not fu lfill the 5 v bus specification completely o f this ic version (/v1) a re not in accordance with t he generic i 2 c-bus specification. 12. dynamic characteristics v hys(por) power-on reset hysteresis voltage -0.2- logic pins sda and scl (voltage referenced to pin gndd) v ih high level input voltage 030 [1] 1.95 1.58 -- v il low level input voltage 031 [1] -- 0.75 1.0 9 table 58. static characteristics v cc = 8.5 v; t amb = 25 c; unless otherwise specified symbol parameter conditions id min typ max table 59. dynamic characteristics vcc = 8.5 v; tamb = 25 c ; unless otherwise specified fm condition: all rf voltages are rms values measured at the input of a 75 ? dummy aerial; f mod = 1 khz, ? f = 22.5 khz, de-emphasis = 50 s, f rf = 97.1 mhz unless otherwise specified am condition: all rf voltages are rms values measured at the input 15 pf / 60 pf dummy aerial; f mod = 400 hz, m = 30%, f rf = 990 khz unless otherwise specified symbol parameter conditions id min typ max unit fm path f rf rf frequency tuning range 040 76 - 108 mhz minimum grid step 040 50 - khz v i(sens) input sensitivity voltage signal to noise ratio = 26 db 043 [1] -6-db v signal to noise ratio = 46 db 044 [1] -19-db v v lo lo leakage lo residue at antenna input; r antenna = 75 ? 279 --6-db v v vco vco leakage vco residue at antenna input; r antenna = 75 ? -46-db v s/n ultimate signal to noise ratio v i(rf) = 1 mv; ? f = 22.5 khz 046 50 5 9 60 -db thd total harmonic distortion ? f = 75 khz, v i(rf) = 1 mv 049 -0.40.8% psrr power supply ripple rejection v ripple /v audio , v ripple = 100 mv, f ripple = 100 hz 618 24 36 - db f if if frequency 613 - 150 - khz ? f max maximum deviation thd = 3%, v i(rf) = 10 mv 050 115 140 - khz image image rejection f unwanted = f wanted 2 * f if 052 50 60 - db ip3 third order intercept point f u1 = 97.5 mhz, f u2 = 97.9 mhz, v i(rf) = 80 db v 053 - 110 116 -db v cs channel separation v i(rf) = 1 mv; byte fh, chsep[2:0] = 100 054 26 40 - db free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 31 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic ds f dynamic selectivity v i(rf) = 10 v; ? f = 22.5 khz; f af = 1 khz;; s/n = 26 db; f = 100 khz 058 -3-db f = 200 khz 059 -50-db f 300 khz 060 -70-db ms am suppression am: f af = 1 khz; m = 30%; v i(rf) = 0.05 mv to 10 mv 062 -55-db v i(rf) = 10 mv to 500 mv 063 -50-db v desense desensitization unwanted signal voltage for 6 db desensitization; | f unwanted -f wanted | > 400 khz v i(rf),wanted = 30 db v 065 -90-db v fm-front-end; pins fmin1 and fmin2 r i input resistance differential 076 - 300 - ? c i input capacitance differential 077 -4-pf v i(rf)agc rf agc v i(rf) value, at which the rf gain decreases by 6 db with increasing v i(rf) ; byte 2h, rfagc[1:0] = 10 step1 081 -82-db v step2 082 -88-db v step3 083 -94-db v step4 084 - 100 - db v step5 085 - 106 - db v step6 086 -112-db v v i(rf) value, at which the rf gain increases by 6 db with decreasing v i(rf) ; byte 2h, rfagc[1:0] = 10 step1 088 -80-db v step2 089 -86-db v step3 090 -92-db v step4 091 -98-db v step5 092 - 103 - db v step6 093 - 107 - db v table 59. dynamic characteristics vcc = 8.5 v; tamb = 25 c ; unless otherwise specified fm condition: all rf voltages are rms values measured at the input of a 75 ? dummy aerial; f mod = 1 khz, ? f = 22.5 khz, de-emphasis = 50 s, f rf = 97.1 mhz unless otherwise specified am condition: all rf voltages are rms values measured at the input 15 pf / 60 pf dummy aerial; f mod = 400 hz, m = 30%, f rf = 990 khz unless otherwise specified symbol parameter conditions id min typ max unit free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 32 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic v i(rf)agc if agc v i(rf) value, at which the if gain decreases by 6 db with increasing v i(rf) ; step1 - 76 - db v v i(rf) value, at which the if gain increases by 6 db with decreasing v i(rf) ; step1 - 73 - db v ss static selectivity 100 khz 135 -12-db 200 khz 137 -60-db 300 khz 138 -70-db fm-rssi; pin rssi v rssi rssi voltage v i(rf) = 0 v 614 tbf 0.75 tbf v v i(rf) = 20 v 155 tbf 2 tbf v v ld start of level detection (corner of level curve) 615 - 0.7 tbf v v rssislope slope of rssi voltage v i(rf) = 500 v 157 -0.8-v/ 20 db f -3db(rssi) cut off frequency of rssi v i(rf) = 500 v; m = 30% 158 - 60 - khz fm if counter v i(sens) input sensitivity voltage v i(rf) at which if counter starts; ? f= 0 160 -3- v res if count resolution 162 -5-khz fm-demodulator, pin mpxout v o output voltage ? f = 22.5 khz; f af = 1 khz; r l =5 k ?, c l = 20 pf 166 180 230 300 mv r o output resistance 169 --100 ? r l load resistance 170 5- - k ? c l load capacitance 171 --20pf audio output, pins lout and rout v o output voltage ? f = 22.5 khz; f af = 1 khz; byte 3h, outa = 1 631 200 tbf 285 410 tbf mv byte 3h, outa = 0 632 80 tbf 120 175 tbf mv r o output resistance - - 100 ? r l load resistance 10 - - k ? c l load capacitance - - 20 pf am path table 59. dynamic characteristics vcc = 8.5 v; tamb = 25 c ; unless otherwise specified fm condition: all rf voltages are rms values measured at the input of a 75 ? dummy aerial; f mod = 1 khz, ? f = 22.5 khz, de-emphasis = 50 s, f rf = 97.1 mhz unless otherwise specified am condition: all rf voltages are rms values measured at the input 15 pf / 60 pf dummy aerial; f mod = 400 hz, m = 30%, f rf = 990 khz unless otherwise specified symbol parameter conditions id min typ max unit free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 33 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic f rf rf frequency tuning range lw 187 144 - 288 khz mw 188 522 - 1710 khz minimum grid step 169 -1-khz v i(sens) input sensitivity voltage s/n = 26 db; byte 3h, demp[1:0] = 10 190 -34-db v s/n ultimate signal to noise v i(rf) = 10 mv 191 tbf 46 55 - db thd total harmonic distortion v i(rf) = 1 mv; m = 80% 193 -1 2 - % psrr power supply ripple rejection v ripple /v audio , v ripple = 100 mv, f ripple = 100 hz 618 24 36 - db f if if frequency 194 - 25 - khz image image rejection ratio f unwanted = f wanted 2 * f if 195 40 55 - db losens local oscillator sensitivity f unwanted = n * (f wanted f if )f if ; n=7 196 -50-db n = 2, 3, 4, 5, 6 - 90 - db ss static selectivity 10 khz 197 tbf 48 - db 20 khz 198 tbf 78 - db v i(rf)(max) maximum rf input voltage thd = 10%; m = 80% 199 tbf 130 - db v ip2 second order intercept point 200 - 170 - db v ip3 third order intercept point f = 40 khz 201 - 127 - db v am-demodulator (pin mpxout) v o output voltage m = 30% 204 195 tbf 230 265 tbf mv audio output (pins lout and rout) v o output voltage m = 30%; f af = 400 hz; byte tuner3, bit outa = 1 659 220 tbf 290 375 tbf mv byte tuner3, bit outa = 0 90 tbf 120 155 tbf mv am lna and am rf agc table 59. dynamic characteristics vcc = 8.5 v; tamb = 25 c ; unless otherwise specified fm condition: all rf voltages are rms values measured at the input of a 75 ? dummy aerial; f mod = 1 khz, ? f = 22.5 khz, de-emphasis = 50 s, f rf = 97.1 mhz unless otherwise specified am condition: all rf voltages are rms values measured at the input 15 pf / 60 pf dummy aerial; f mod = 400 hz, m = 30%, f rf = 990 khz unless otherwise specified symbol parameter conditions id min typ max unit free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 34 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic [1] the noise limited sensitivity is degraded by interferences at certain rf frequencies v i(rf)agc switched lna agc v i(rf) value, at which the lna gain decreases with increasing v i(rf) ; m = 0% step1 - 112 - db v step2 - 128 - db v step3 - 134 - db v v i(rf) value, at which the lna gain increases with decreasing v i(rf) ; m = 0% step1 - 108 - db v step2 - 114 - db v step3 - 126 - db v v i(rf)agc linear rf agc v i(rf) agc start; m = 0% 267 byte 2h, rfagc[1:0] = 00 - 90 - db v byte 2h, rfagc[1:0] = 01 - 88 - db v byte 2h, rfagc[1:0] = 10 - 86 - db v byte 2h, rfagc[1:0] = 11 - 84 - db v v i(rf)agc linear if agc v i(rf) agc start; m = 0% - 60 - db v t s settling time linear rf agc settling time; v i(rf) = 10 mv to 600 mv 276 - 64 - ms v i(rf) = 600 mv to 10 mv 277 - 3.2 - s am-rssi; pin rssi v rssi rssi voltage v i(rf) = 0 v 616 -1-v v i(rf) = 50 v 411 -2.5-v v i(rf) = 500 v 412 -3.3-v v ld start of level detection (corner of level curve) 617 -1- v v rssislope slope of rssi voltage 5 v < v i(rf) < 500 v 413 -0.8-v/ 20 db am if counter v i(sens) input sensitivity voltage v i(rf) at which if counter starts; m= 0 416 -3- v res if count resolution 418 - 500 - hz table 59. dynamic characteristics vcc = 8.5 v; tamb = 25 c ; unless otherwise specified fm condition: all rf voltages are rms values measured at the input of a 75 ? dummy aerial; f mod = 1 khz, ? f = 22.5 khz, de-emphasis = 50 s, f rf = 97.1 mhz unless otherwise specified am condition: all rf voltages are rms values measured at the input 15 pf / 60 pf dummy aerial; f mod = 400 hz, m = 30%, f rf = 990 khz unless otherwise specified symbol parameter conditions id min typ max unit free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 35 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 13. application information fig 16. application diagram of TEF6601t/v1 table 60. dc operating point values measured at v i(rf) = 0 v, audio output gain low symbol pin unloaded dc voltage (v) am mode fm mode min. typ max min. typ max amrfdec 1 - 4.2 - floating amrfin 2 - 2.9 - fmin2 3 - 3.1 - fmin1 4 - 3.1 - gndrf 5 ext. 0 ext. 0 v cc2 6 ext. 8.5 ext. 8.5 amrfagc 7 floating 1.8 l r scl sda v cc 1 f 220 nf 4 mhz 470 k ? 470 k ? 1 nf 1 nf 3.3 h 100 nf 220 nf 100 ? 560 h 10 nf 10 nf 560 h 4.7 k ? 10 nf 100 nf 100 nf 47 f 3.3 h 22 nf 100 nf 390 nh 6.8 pf 150 nh 33 pf 33 pf signal improvement control stereo decoder high cut softmute noise blanker rssi 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 26 25 24 27 28 29 30 31 32 100 nf test fm tuner am tuner pll tuning system i 2 c bus output power supply 33 ? 10 nf 18 pf TEF6601t/v1 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 36 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic lout 8 3.85 3.85 rout 9 3.85 3.85 gndaud 10 ext. 0 ext. 0 amifagc2 11 - tbf mpxin 12 3.7 3.7 mpxout 13 4.1 4.1 rssi 14 1.3 1.3 xtal2 15 6.5 6.5 xtal1 16 6.5 6.5 gndd 17 ext. 0 ext. 0 scl 18 . ext ext sda 19 . ext ext vref 20 4.0 4.0 vregsup 21 5.6 6.5 7 5.6 6.5 7 v cc1 22 ext. 8.5 ext. 8.5 gnd 23 ext. 0 ext. 0 vcodec 24 5.6 5.6 pll 25 1.2 5.5 1.2 5.5 pllref 26 2.25 2.25 test 27 - - amselin1 28 7 v cc 7v cc amselin2 29 7 v cc 7v cc amifagc1 30 5.5 amselout1 31 7 v cc 7v cc amselout2 32 7 v cc 7v cc table 60. dc operating point values measured at v i(rf) = 0 v, audio output gain low symbol pin unloaded dc voltage (v) am mode fm mode min. typ max min. typ max free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 37 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 14. package outline fig 17. package outline sot287-1 (so32) unit a max. a 1 a 2 a 3 b p cd (1) e (1) eh e ll p qz y w v references outline version european projection issue date iec jedec jeita mm inches 2.65 0.1 0.25 0.01 1.4 0.055 0.3 0.1 2.45 2.25 0.49 0.36 0.27 0.18 20.7 20.3 7.6 7.4 1.27 10.65 10.00 1.2 1.0 0.95 0.55 8 0 o o 0.25 0.1 0.004 0.25 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 1.1 0.4 sot287-1 mo-119 (1) 0.012 0.004 0.096 0.089 0.02 0.01 0.05 0.047 0.039 0.419 0.394 0.30 0.29 0.81 0.80 0.011 0.007 0.037 0.022 0.01 0.01 0.043 0.016 w m b p d h e z e c v m a x a y 32 17 16 1 a a 1 a 2 l p q detail x l (a ) 3 e pin 1 index 0 5 10 mm scale s o32: plastic small outline package; 32 leads; body width 7.5 mm sot287 -1 00-08-17 03-02-19 free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 38 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 15. soldering 15.1 introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all su rface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for fi ne pitch smds. in these situ ations reflow soldering is recommended. 15.2 reflow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circ uit board by screen printing, stencilling or pressure-syringe disp ensing before package placement. driven by legislation and environmental forc es the worldwide use of lead-free solder pastes is increasing. several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering a nd cooling) vary between 100 seconds and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 cto270 c depending on solder paste material. the top-surface temperature of the pack ages should preferably be kept: ? below 225 c (snpb process) or below 245 c (pb-free process) ? for all bga, htsson..t and ssop..t packages ? for packages with a thickness 2.5 mm ? for packages with a thickness < 2.5 mm and a volume 350 mm 3 so called thick/large packages. ? below 240 c (snpb process) or below 260 c (pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm 3 so called small/thin packages. moisture sensitivity precautions, as indicate d on packing, must be respected at all times. 15.3 wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder br idging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was s pecifically developed. if wave soldering is used the following conditions must be observed for optimal results: ? use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. ? for packages with leads on two sides and a pitch (e): ? larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the tr ansport direction of the printed-circuit board; ? smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the tran sport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 39 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic ? for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must inco rporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 c or 265 c, depending on solder material applied, snpb or pb-free respectively. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 15.4 manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. co ntact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 c and 320 c. 15.5 package related soldering information [1] for more detailed information on the bga packages refer to the (lf)bga application note (an01026); order a copy from your philips semiconductors sales office. [2] all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vapori zation of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . [3] these transparent plastic packages are ex tremely sensitive to reflow soldering conditions and must on no account be processe d through more than one soldering cycle or subjected to infr ared reflow soldering with peak temperature exceeding 217 c 10 c measured in the atmosphere of the reflow oven. the pack age body peak temperature must be kept as low as possible. [4] these packages are not suitable for wave soldering. on vers ions with the heatsink on the bo ttom side, the solder cannot pene trate between the printed-circuit board and the heatsink. on versions wi th the heatsink on the top side, the solder might be deposite d on the heatsink surface. [5] if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. [6] wave soldering is suitable for lqfp, qfp and tqfp packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. [7] wave soldering is suitable for ssop, tssop, vso and vssop packages with a pitch (e) equal to or larger than 0.65 mm; it is def initely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. table 61. suitability of surface mount ic packages for wave and reflow soldering methods package [1] soldering method wave reflow [2] bga, htsson..t [3] , lbga, lfbga, sqfp, ssop..t [3] , tfbga, vfbga, xson not suitable suitable dhvqfn, hbcc, hbga, hlqfp, hso, hsop, hsqfp, hsson, htqfp, htssop, hvqfn, hvson, sms not suitable [4] suitable plcc [5] , so, soj suitable suitable lqfp, qfp, tqfp not recommended [5] [6] suitable ssop, tssop, vso, vssop not recommended [7] suitable cwqccn..l [8] , pmfp [9] , wqccn..l [8] not suitable not suitable free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 40 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic [8] image sensor packages in principle should not be soldered. they are mounted in sockets or delivered pre-mounted on flex foil . however, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. the appropr iate soldering profile can be provided on request. [9] hot bar soldering or manual sol dering is suitable for pmfp packages. free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 41 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 16. revision history table 62. revision history document id release date data sheet status change notice supersedes 2006-04-18 objective specif ication initial version 2006-05-05 draft modifications: ? 0049, 0050, 0135 to 0138, 0169, 0196, 0276 ? new id: 0613 to 0618 modifications: ? ? free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 42 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 17. legal information 17.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.semiconductors.philips.com. 17.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may resu lt in modifications or additions. philips semiconductors does not give any representations or warranties as to the accuracy or completeness of informa tion included herein and shall have no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is i ntended for quick reference only and should not be relied upon to contain detail ed and full information. for detailed and full information see th e relevant full data sheet, which is available on request via the local philips semiconductors sales of fice. in case of any inconsis tency or conflict with the short data sheet, the full data sheet shall prevail. 17.3 disclaimers general ? information in this document is believed to be accurate and relia ble. however, philips semiconductors does not give any represe ntations or warranties, expressed or implied, as to the accuracy or comple teness of such information and shall have no liability for the co nsequences of use of such information. right to make changes ? philips semiconductors reserves the right to make changes to information published in this document, including without limitati on specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? philips semiconductors products are not designed, authorized or wa rranted to be suitable for use in medical, military, aircraft , space or life support equipment, nor in applications where failure or malfunct ion of a philips semiconductors product can reasonably be expec ted to result in personal injury, death or severe property or environmental damage. philips semi conductors accepts no liability for inclusion and/or use of phili ps semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors mak es no representation or warranty that such applications will be suitabl e for the specified use without further testing or modificatio n. limiting values ? stress above one or more limiting values (as defined in the ab solute maximum ratings system of iec 60134) may cause permanent da mage to the device. limiting values are stress ratings only and oper ation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting va lues for extended periods may affect device reliability. terms and conditions of sale ? philips semiconductors products are sold s ubject to the general terms and conditions of commercial sale, as published at http://www.semic onductors.philips.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by philips se miconductors. in case of any inconsistency or conflict between in formation in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 17.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 18. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification. free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 43 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic notes free datasheet http://
draft draft draft dr draft draft draft dr af draft draft dr aft draft dra f t d draft draft draft draft dr aft draft dra ? koninklijke philips electronics n.v. 2006. all rights reserved. objective specification rev. 0.1 ? 25 august 2006 44 of 44 philips semiconductors TEF6601t/v1 tuner on main board ic 19. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 quick reference data . . . . . . . . . . . . . . . . . . . . . 1 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 functional description . . . . . . . . . . . . . . . . . . . 5 7.1 fm tuner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2 fm stereo decoder . . . . . . . . . . . . . . . . . . . . . . 5 7.3 weak signal processing and noise blanker . . . 5 7.4 am tuner . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.5 pll tuning system . . . . . . . . . . . . . . . . . . . . . . 5 7.6 i2c-bus transceiver . . . . . . . . . . . . . . . . . . . . . 5 8 i2c-bus protocol . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.2 write mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 28 10 thermal characteristics . . . . . . . . . . . . . . . . . 29 11 static characteristics. . . . . . . . . . . . . . . . . . . . 29 12 dynamic characteristics . . . . . . . . . . . . . . . . . 30 13 application information. . . . . . . . . . . . . . . . . . 34 14 package outline . . . . . . . . . . . . . . . . . . . . . . . . 36 15 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 15.1 introduction to soldering surface mount packages 37 15.2 reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 37 15.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 37 15.4 manual soldering . . . . . . . . . . . . . . . . . . . . . . 38 15.5 package related solderin g information . . . . . . 38 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . 40 17 legal information. . . . . . . . . . . . . . . . . . . . . . . 41 17.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 41 17.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 17.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 17.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 41 18 contact information. . . . . . . . . . . . . . . . . . . . . 41 19 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 free datasheet http://
|
