1 power transistors 2sD2139 silicon npn triple diffusion planar type for high-current amplification ratio, power amplification n features l high foward current transfer ratio h fe l satisfactory linearity of foward current transfer ratio h fe l allowing supply with the radial taping n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current base current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c i b p c t j t stg ratings 80 60 6 6 3 1 15 2 150 C55 to +150 unit v v v a a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage transition frequency symbol i cbo i ceo i ebo v ceo h fe * v ce(sat) f t conditions v cb = 80v, i e = 0 v ce = 40v, i b = 0 v eb = 6v, i c = 0 i c = 25ma, i b = 0 v ce = 4v, i c = 0.5a i c = 2a, i b = 0.05a v ce = 12v, i c = 0.2a, f = 10mhz min 60 500 typ 50 max 100 100 100 2500 1 unit m a m a m a v v mhz * h fe rank classification rank q p o h fe 500 to 1000 800 to 1500 1200 to 2500 t c =25 c ta=25 c unit: mm 1:base 2:collector 3:emitter mt4 type package 1.0 10.0 0.2 0.55 0.1 2.5 0.2 2.5 0.2 4.2 0.2 13.0 0.2 2.5 0.2 18.0 0.5 solder dip 5.0 0.1 2.25 0.2 1.2 0.1 0.65 0.1 0.55 0.1 c1.0 90 c1.0 123 1.05 0.1 0.35 0.1 free datasheet http://www.ndatasheet.com
2 power transistors 2sD2139 p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c c ob v cb area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 1.2 1.0 0.8 0.6 0.4 0.2 t c =25?c i b =1.6ma 1.4ma 1.2ma 1.0ma 0.8ma 0.6ma 0.4ma 0.2ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 02.0 1.6 0.4 1.2 0.8 0 6 5 4 3 2 1 v ce =4v t c =100?c 25?c ?5?c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =40 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 10000 1000 100 30 300 3000 v ce =4v 25?c ?5?c t c =100?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 1000 100 10 3 30 300 v ce =12v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 1 3 10 30 100 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c t=10ms 1ms dc i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a ) free datasheet http://www.ndatasheet.com
3 power transistors 2sD2139 r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 0.1 1 10 100 10000 1000 note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w ) free datasheet http://www.ndatasheet.com
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