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inchange semiconductor isc product specification isc silicon npn power transistor 2sC2489 description good linearity of h fe collector-emitter sustaining voltage- : v ceo(sus) = 150v (min) wide area of safe operation complement to type 2sa1065 applications designed for af amplifier,high power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 5 v i c collector current-continuous 10 a i cm collector current-peak 15 a p c collector power dissipation @t c =25 120 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn free datasheet http://www.ndatasheet.com
inchange semiconductor isc product specification isc silicon npn power transistor 2sC2489 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a ; i e = 0 150 v v ce (sat) collector-emitter saturation voltage i c = 8a; i b = 0.8a b 2.0 v v be (on) base-emitter on voltage i c = 10a ; v ce = 5v 2.5 v i cbo collector cutoff current v cb = 70v; i e = 0 1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 2 ma h fe-1 dc current gain i c = 2a ; v ce = 5v 40 280 h fe-2 dc current gain i c = 10a ; v ce = 5v 30 f t current-gain?bandwidth product i c = 0.5a ; v ce = 10v 50 mhz ? h fe- 1 classifications r q p o 40-80 60-120 90-180 140-280 isc website www.iscsemi.cn free datasheet http://www.ndatasheet.com |
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