vishay siliconix si7983dp document number: 72637 s09-0272-rev. b, 16-feb-09 www.vishay.com 1 dual p-channel 20-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? new low thermal resistance powerpak ? package with low 1.07 mm profile applications ? load switch product summary v ds (v) r ds(on) ( )i d (a) - 20 0.017 at v gs = - 4.5 v - 12 0.020 at v gs = - 2.5 v - 11 0.024 at v gs = - 1.8 v - 10.1 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d1 d1 d2 d2 6.15 mm 5.15 mm bottom view powerpak so-8 ordering information: si7983dp-t1-e3 (lead (pb)-free) SI7983DP-T1-GE3 (lead (pb)-free and halogen-free) s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. b. see solder profile ( http://www.vishay.com/ppg?73257 ). the powerpak so-8 is a leadless pack age. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. c. rework conditions: manual soldering with a solder ing iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) a t a = 25 c i d - 12 - 7.7 a t a = 70 c - 9.6 - 6.2 pulsed drain current i dm - 30 continuous source current (diode conduction) a i s - 2.9 - 1.2 maximum power dissipation a t a = 25 c p d 3.5 1.4 w t a = 70 c 2.2 0.9 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) b, c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 26 35 c/w steady state 60 85 maximum junction-to-case (drain) steady state r thjc 2.2 2.7
www.vishay.com 2 document number: 72637 s09-0272-rev. b, 16-feb-09 vishay siliconix si7983dp notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 600 a - 0.40 - 1 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 5 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 30 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 12 a 0.014 0.017 v gs = - 2.5 v, i d = - 11 a 0.016 0.020 v gs = - 1.8 v, i d = - 4.1 a 0.020 0.024 forward transconductance a g fs v ds = - 15 v, i d = - 12 a 41 s diode forward voltage a v sd i s = - 2.9 a, v gs = 0 v - 0.8 - 1.2 v dynamic b total gate charge q g v ds = - 10 v, v gs = - 4.5 v, i d = - 12 a 49 74 nc gate-source charge q gs 7.2 gate-drain charge q gd 12.1 gate resistance r g f = 1 mhz 8 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 10 i d ? - 1 a, v gen = - 4.5 v, r g = 6 35 55 ns rise time t r 60 90 turn-off delay time t d(off) 390 585 fall time t f 190 285 source-drain reverse recovery time t rr i f = - 2.9 a, di/dt = 100 a/s 106 160 output characteristics 0 5 10 15 20 25 30 012345 v gs = 5 thru 2 v 1 v 1.5 v v ds - drain-to-source voltage (v) - drain current (a) i d transfer characteristics 0 5 10 15 20 25 30 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 25 c t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 72637 s09-0272-rev. b, 16-feb-09 www.vishay.com 3 vishay siliconix si7983dp typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 v gs = 1.8 v - on-resistance ( ) r ds(on) i d - drain current (a) v gs = 2.5 v v gs = 4.5 v 0 1 2 3 4 5 0 102030405060 v ds = 10 v i d = 12 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v sd - source-to-drain voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c t j = 25 c 30 10 1 - source current (a) i s capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 1000 2000 3000 4000 5000 6000 048121620 c rss c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 v gs = 4.5 v i d = 12 a t j - junction t emperature ( c) (normalized) - on-resistance r ds(on) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 1234 5 - on-resistance ( ) r ds(on) v gs - gate-to-source v oltage (v) i d = 4.1 a i d = 12 a
www.vishay.com 4 document number: 72637 s09-0272-rev. b, 16-feb-09 vishay siliconix si7983dp typical characteristics 25 c, unless otherwise noted threshold voltage - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 600 a variance (v) v gs(th) t j - temperature (c) single pulse power, junction-to-ambient 0 10 50 power (w) time (s) 30 40 0.1 600 1 0.01 0.001 20 10 100 safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse p(t) = 10 dc 0.1 i dm limited i d( on) limited ds(on) * limited by r bvdss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified - drain current (a) i d normalized thermal transient im pedance, junction-to-ambient 10 - 3 10 - 2 1 1 0 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef fective t ransient thermal impedance 1. duty cycle, d = 2. per unit base = r th j a = 68 c/w 3. t jm - t a = p dm z th j a (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 72637 s09-0272-rev. b, 16-feb-09 www.vishay.com 5 vishay siliconix si7983dp typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72637. normalized thermal transient impedance, junction-to-case 10 - 3 10 - 2 1 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance
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