document number: 83508 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.6, 13-oct-09 1 optocoupler with phototransistor output K233P, K233Pg vishay semiconductors description the K233P(g) series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. agency approvals ? bsi: bs en 41003, bs en 60065, bs en 60950 ? fimko (seti): en 60950, certificate number fi25155 ? underwriters laboratory (ul) 1577 recognized, file number e52744 ? en 60747 (vde 0884) features ? rated impulse voltage (transient overvoltage) v iotm = 6 kv peak ? isolation test voltage (partial discharge test voltage) v pd = 1.6 kv ? rated isolation voltage (rms includes dc) v iowm = 600 v rms (848 v peak) ? rated recurring peak voltage (repetitive) v iorm = 600 v rms ? creepage current resistance according to vde 0303/ iec 112 comparative tracking index: cti = 275 ? thickness through insulation 0.4 mm ? isolation materials according to ul94-vo ? pollution degree 2 (din/vde 0110/resp. iec 664) ? climatic classification 55/100/21 (iec 68 part 1) ? low temperature coefficient of ctr ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications circuits for safe protective separation against electrical shock according to safety cla ss ii (reinforced isolation): ? for appl. class i - iv at mains voltage 300 v ? for appl. class i - iv at mains voltage 600 v according to vde 0884, table 2, suitable for: - switch-mode power supplies - line receiver - computer peripheral interface - microprocessor system interface note g = lead form 10.16 mm; g is not marked on the body c e b 1 8 537_3 23 1 54 6 n c c(-) a (+) v de 17201_4 order information part remarks K233P 100 % to 200 % K233Pg 100 % to 200 %
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83508 2 rev. 1.6, 13-oct-09 K233P, K233Pg vishay semiconductors optocoupler with phototransistor output notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to wave profile for soldering co nditions for through hole devices (dip). note t amb = 25 c, unless otherwise specified. minimum and maximum values are testing requi rements. typical values ar e characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 5v forward current i f 3ma power dissipation t amb 25 c p v 70 mw junction temperature t j 125 c forward surge current t p 10 s i fsm 1a output collector emitter voltage v ceo 32 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation t amb 25 c p v 70 mw junction temperature t j 125 c coupler isolation test voltage (rms) t = 1 min v iso 5kv total power dissipation t amb 25 c p tot 200 mw ambient temperature range t amb - 55 to +100 c storage temperature range t stg - 55 to +125 c soldering temperature (2) 2 mm from case, t 10 s t sld 260 c electrical characteristics parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf output collector emitter voltage i c = 1 ma v ceo 32 v emitter collector voltage i e = 100 a v eco 7v collector emitter leakage v ce = 20 v, i f = 0, e = 0 i ceo 10 200 na coupler collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf
document number: 83508 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.6, 13-oct-09 3 K233P, K233Pg optocoupler with phototransistor output vishay semiconductors note according to din en 60747-5-5 (vde 0884) (see figure 2). this optoc oupler is suitable for safe el ectrical isolation only within the safety ratings. compliance with the safety ratings shall be ens ured by means of suitabl e protective circuits. fig. 1 - derating diagram fig. 2 - test pulse diagram for sample test according to din en 60747-5-5(vde0884)/din en 60747-; iec60747 current transfer ratio parameter test condition part symbol min. type max. unit i c /i f v ce = 5 v, i f = 10 ma K233Pg ctr 100 200 % v ce = 5 v, i f = 5 ma maximum safety ratings parameter test condition symbol min. typ. max. unit input forward current i f 130 ma output power dissipation t amb 25 c p diss 265 mw coupler rated impulse voltage v iotm 6kv safety temperature t si 150 c insulation rated parameters parameter test condition symbol min. type max. unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 2) v iotm 6kv v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 v io = 500 v, t amb = 100c r io 10 11 v io = 500 v, t amb = 150c (construction test only) r io 10 9 0 25 50 75 100 125 150 175 200 225 250 275 0 25 50 75 100 125 150 175 p - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 95 10923 tot p si (m w ) i si (ma) t 13930 t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v io w m v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83508 4 rev. 1.6, 13-oct-09 K233P, K233Pg vishay semiconductors optocoupler with phototransistor output fig. 3 - test circuit, non-saturated operation fig. 4 - test circuit, saturated operation fig. 5 - switching times switching characteristics parameter test condition part symbol min. typ. max. unit delay time v s = 5 v, i c = 5 ma, r l = 100 (see figure 3) t d 4s rise time v s = 5 v, i c = 5 ma, r l = 100 (see figure 3) t r 7s fall time v s = 5 v, i c = 5 ma, r l = 100 (see figure 3) t f 6.7 s storage time v s = 5 v, i c = 5 ma, r l = 100 (see figure 3) t s 0.3 s turn-on time v s = 5 v, i c = 5 ma, r l = 100 (see figure 3) t on 11 s turn-off time v s = 5 v, i c = 5 ma, r l = 100 (see figure 3) t off 7s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k (see figure 4) t on 25 s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k (see figure 4) t off 42.5 s channel i channel ii 100 50 + 5 v oscilloscope r l 1 m c l 20 pf i c = 5 ma; adj u sted thro u gh inp u t amplit u de i f i f r g = 50 t p t p = 50 s t = 0.01 0 14943 channel i channel ii 14944 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c i f 0 i f 50 1 k oscilloscope r l 1 m c l 20 pf t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p p u lse d u ration t d delay time t r rise time t on (= t d + t r ) t u rn-on time t s storage time t f fall time t off (= t s + t f )t u rn-off time 96 1169 8
document number: 83508 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.6, 13-oct-09 5 K233P, K233Pg optocoupler with phototransistor output vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 6 - total power dissipat ion vs. ambient temperature fig. 7 - forward current vs. forward voltage fig. 8 - relative current transfer ratio vs. ambient temperature fig. 9 - collector dark current vs. ambient temperature fig. 10 - collector base current vs. forward current fig. 11 - collector current vs. forward current 0 50 100 150 200 250 300 040 8 0 120 p tot - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 96 11700 co u pled de v ice phototransistor ir-diode 0.1 1 10 100 1000 0 v f - for w ard v oltage ( v ) 96 11 8 62 i f - for w ard c u rrent (ma) 1.6 1.2 0. 8 0.4 2.0 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 8 0 t am b - am b ient temperat u re (c) 96 11920 ctr rel - relati v e c u rrent transfer ratio v ce = 5 v i f = 10 ma 0255075 1 10 100 1000 10 000 i ceo - collector dark c u rrent, 100 95 11026 w ith open base (na) v ce = 20 v i f = 0 t am b - am b ient temperat u re (c) 110 0.001 0.01 0.1 1 i cb - collector base c u rrent (ma) i f - for w ard c u rrent (ma) 100 95 11052 v s = 5 v 0.1 1 10 0.01 0.1 1 100 i c - collector c u rrent (ma) i f - for w ard c u rrent (ma) 100 95 11053 10 v ce = 5 v
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83508 6 rev. 1.6, 13-oct-09 K233P, K233Pg vishay semiconductors optocoupler with phototransistor output fig. 12 - collector current vs. collector emitter voltage fig. 13 - collector emitter saturation voltage vs. collector current fig. 14 - dc current gain vs. collector current fig. 15 - current transfer ratio vs. forward current fig. 16 - turn-on/off time vs. forward current fig. 17 - turn-on/off time vs. collector current 0.1 1 10 0.1 1 10 100 v ce - collector emitter v oltage ( v ) 100 95 11054 i c - collector c u rrent (ma) 5 ma 2 ma 1 ma i f = 50 ma 20 ma 10 ma 110 0 0.2 0.4 0.6 0. 8 1.0 v cesat - collector emitter sat u ration v oltage ( v ) i c - collector c u rrent (ma) 100 95 11055 20 % u sed ctr = 50 % u sed 10 % u sed 0.01 0.1 1 10 0 200 400 600 8 00 1000 h fe - dc c u rrent gain i c - collector c u rrent (ma) 100 95 11056 v ce = 5 v 0.1 1 10 1 10 100 1000 ctr - c u rrent transfer ratio ( % ) i f - for w ard c u rrent (ma) 100 95 11057 v ce = 5 v 01015 0 10 20 30 40 50 i f - for w ard c u rrent (ma) 20 95 11017 t on /t off - t u rn-on/t u rn-off time ( s) sat u rated operation v s = 5 v r l = 1 k t off t on 5 04 i c - collector c u rrent (ma) 10 95 11016 n on-sat u rated operation v s = 5 v r l = 100 t off t on 0 5 10 15 20 8 t on /t off - t u rn-on/t u rn-off time ( s) 2 6
document number: 83508 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.6, 13-oct-09 7 K233P, K233Pg optocoupler with phototransistor output vishay semiconductors package dimensions in millimeters dip-6 dip-6, 400 mil package marking 14771_2 7.12 0.3 0.25 6.5 0.3 1.2 0.1 3.5 0.3 7.62 typ. 0.5 0.1 4.5 0.3 2. 8 0.5 4.5 0.3 1 2 3 6 5 4 7.62 to 9.5 typ. 14771_1 7.12 0.3 0.25 6.5 0.3 1.2 0.1 3.5 0.3 10.16 (typ.) 7.62 typ. 0.5 0.1 4.5 0.3 2. 8 0.5 4.5 0.3 1 2 3 6 5 4 21764-2 8 cqy 8 0 n v y ww 24
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