IXA20I1200PB preliminary single igbt xpt igbt (c) 2 (e) 3 (g) 1 part number IXA20I1200PB backside: collector c25 ce(sat) vv 1.8 ces 38 1200 = v= v i= a features / advantages: applications: package: easy paralleling due to the positive temperature coefficient of the on-state voltage rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) ac motor drives solar inverter medical equipment uninterruptible power supply air-conditioning systems welding equipment switched-mode and resonant-mode power supplies inductive heating, cookers pumps, fans to-220 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20131024a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
IXA20I1200PB preliminary -di /dt = a/s t = c v ces v 1200 collector emitter voltage collector emitter saturation voltage t = 25c collector current a 38 a c vj symbol definition ratings typ. max. min. conditions unit 22 v v ce(sat) total power dissipation 165 w collector emitter leakage current 6.5 v turn-on delay time 70 ns t reverse bias safe operating area a v ges v 20 v gem max. transient gate emitter voltage t = c c v p tot gate emitter threshold voltage rbsoa 45 30 t = c t = c vj v max. dc gate voltage i c25 i c t = 25c vj i = a; v = 15 v cge t = 25c vj v ge(th) i ces i = ma; v = v cgece v = v ; v = 0 v ce ces ge i ges t = 25c vj gate emitter leakage current v = 20 v ge 2.1 2.1 5.9 5.4 ma 0.1 ma 0.1 500 g(on) total gate charge v = v; v = 15 v; i = a ce q ge c 47 nc t t t e e d(on) r d(off) f on off 40 ns 250 ns 100 ns 1.65 mj 1.7 mj current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load v = v; i = a v = 15 v; r = ? ce c ge g v = 15 v; r = ? ge g v = v cemax 1200 short circuit safe operating area s scsoa 10 t = c vj v = v; v = 15 v ce ge short circuit duration t short circuit current i sc sc r = ? ; non-repetitive g 60 a r thjc thermal resistance junction to case 0.76 k/w v rrm v 1200 max. repetitive reverse voltage t = 25c vj t = 25c forward current a tbd a c tbd t = c c i f25 i f t = 25c forward voltage v tbd v vj tbd t = 125c vj v f i = a f t = 25c reverse current ma * ma vj * t = 125c vj i r r rrm t = 125c vj q i t rr rm rr tbd c tbd a tbd ns reverse recovery charge max. reverse recovery current reverse recovery time v = i = a; v = 0 v f fge e rec tbd mj reverse recovery energy r r thjc thermal resistance junction to case tbd k/w v = v t = 25c c t = 25c vj t = c vj vj 15 0.6 15 15 56 56 56 600 900 600 i cm 1.8 r thch thermal resistance case to heatsink k/w r thch thermal resistance case to heatsink k/w * not applicable, see ices value above igbt diode 600 v v = v cemax 900 80 80 80 80 125 125 125 125 125 na 0.50 ixys reserves the right to change limits, conditions and dimensions. 20131024a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
IXA20I1200PB preliminary ratings xxxxxx zyyww logo part number date code lot # abcdef product markin g a ssembly line i x a 20 i 1200 pb part number igbt xpt igbt gen 1 / std single igbt to-220ab (3) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 0.6 mounting torque 0.4 t vj c 150 virtual junction temperature -40 weight g 2 symbol definition typ. max. min. conditions operation temperature unit f c n 60 mounting force with clip 20 i rms rms current 35 a per terminal 125 -40 to-220 similar part package voltage class ixa20if1200hb to-247ad (3) 1200 delivery mode quantity code no. part number marking on product ordering IXA20I1200PB 507929 tube 50 IXA20I1200PB standard t stg c 150 storage temperature -40 threshold voltage v m ? v 0 max r 0 max slope resistance * 1.1 86 equivalent circuits for simulation t = vj i v 0 r 0 igbt 150 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131024a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
IXA20I1200PB preliminary dim. millimeter inches min. max. min. max. a 4.32 4.82 0.170 0.190 a1 1.14 1.39 0.045 0.055 a2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 2.54 bsc 0.100 bsc h1 5.85 6.85 0.230 0.270 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.54 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 3x b2 e ?p q d l1 l 3x b 2x e c a2 h1 a1 a 123 4 (c) 2 (e) 3 (g) 1 outlines to-220 ixys reserves the right to change limits, conditions and dimensions. 20131024a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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