sot23 pnp silicon planar medium power switching transistors issue 2 ? september 1995 j partmarking details ? bss69 - l2 bss70 - l3 bss69r - l6 bss70r - l7 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v peak pulse current i cm -200 ma continuous collector current i c -100 ma base current i b -50 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-emitter breakdown voltage v (br)ceo -40 v i c =-1ma collector-base breakdown voltage v (br)cbo -40 v i c =-10 m a emitter-base breakdown voltage v (br)ebo -5 v i e =-10 m a collector- emitter cut-off current i ces -50 na v ces =-30v collector-emitter saturation voltage v ce(sat) -0.25 -0.40 v v i c =-10ma, i b =-1ma i c =-50ma, i b =-5ma* base-emitter saturation voltage v be(sat) -0.65 -0.85 -0.95 v v i c =-10ma, i b =-1ma i c =-50ma, i b =-5ma* static forward current bss69 transfer ratio h fe 30 40 50 30 15 150 i c =-100 m a, i c =-1ma, i c =-10ma, v ce =-1v i c =-50ma*, i c =-100ma*, static forward current bss70 transfer ratio h fe 60 80 100 60 30 300 i c =-100 m a, i c =-1ma, i c =-10ma, v ce =-1v i c =-50ma*, i c =-100ma*, transition frequency bss69 bss70 f t 200 250 mhz mhz i c =-10ma, v ce =-20v f=100mhz collector-base capacitance c obo 4.5 pf v cb =-5v, f=100khz emitter-base capacitance c ibo 10 pf v eb =-0.5v, f=100khz noise figure n typ. 5 db i c =-100 ma, v ce =-5v r s =1k w , f=10hz to15.7 khz switching times: delay; rise storage time fall time t d ; t f t s t f 35 225 70 ns ns ns v cc =-3v, i c =-10ma i b1 = i b2 =-1ma *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% bss69 bss70 c b e page number
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