? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 0.6 a i dm t c = 25 c, pulse width limited by t jm 1.2 a i a t c = 25 c 0.6 a e as t c = 25 c50 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c42w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g ds99872c(07/09) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1200 v v gs(th) v ds = v gs , i d = 50 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v 3 a t j = 125 c 125 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 27 34 polar tm power mosfet n-channel enhancement mode avalanche rated ixta06n120p IXTP06N120P v dss = 1200v i d25 = 0.6a r ds(on) 34 features z international standard packages z avalanche rated z low package inductance advantages z easy to mount z space savings z high power density applications z high voltage switched-mode and resonant-modepower supplies z high voltage pulse power applications z high voltage discharge circuits in lasers pulsers, spark igniters, rf generators z high voltage dc-dc converters z high voltage dc-ac inverters g = gate d = drain s = source tab = drain to-220 (ixtp) to-263 (ixta) g s d (tab) (tab) d g s
ixys reserves the right to change limits, test conditions, and dimensions. ixta06n120p IXTP06N120P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 0.5 ? i d25 , note 1 0.28 0.45 s c iss 236 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 15 pf c rss 3.2 pf t d(on) 19 ns t r 37 ns t d(off) 35 ns t f 34 ns q g(on) 13.3 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 2.4 nc q gd 7.8 nc r thjc 3.0 c/w r thcs (to-220) 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 0.6 a i sm repetitive, pulse width limited by t jm 1.8 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr i f = 0.6a, -di/dt = 100a/ s 900 ns v r = 100v, v gs = 0v note 1. pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixtp) outline resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 , r g = 50 (external) to-263 (ixta) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 1. gate 2. collector 3. emitter 4. collector bottom side
? 2009 ixys corporation, all rights reserved ixta06n120p IXTP06N120P fig. 1. output characteristics @ 25oc 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. output characteristics @ 125oc 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35 40 45 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. r ds(on) normalized to i d = 0.3a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized i d = 0.6a i d = 0.3a v gs = 10v fig. 4. r ds(on) normalized to i d = 0.3a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 0.1 0.2 0.3 0.4 0.5 3.0 3.5 4.0 4.5 5.0 5.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta06n120p IXTP06N120P ixys ref: t_06n120p (1a) 04-02-08-b fig. 11. maximum transient thermal impedance 0.1 1.0 10.0 0.1 1 10 100 1000 pulse width - second z (th)jc - oc / w fig. 7. transconductance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 0.2 0.3 0.4 0.5 0.6 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 v sd - volts i s - amperes t j = 25oc t j = 125oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 q g - nanocoulombs v gs - volts v ds = 600v i d = 0.3a i g = 1ma fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss
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