2sC3624 features high dc current gain: h fe = 1000 to 3200. low v ce(sat) :(v ce(sat) = 0.07 v typ). 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 12 v collector current (dc) i c 150 ma total power dissipation p t 200 mw junction temperature t j 150 storage temperature range t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 50v, i e =0 100 na emitter cutoff current i ebo v eb = 10v, i c =0 100 na dc current gain * h fe v ce =5v,i c = 1ma 1000 1800 3200 base-emitter voltage * v be v ce =5v,i c = 1ma 0.56 v collector-emitter saturation voltage * v ce(sat) i c = 50ma , i b = 5ma 0.07 0.3 v base-emitter saturation voltage * v be(sat) i c = 50ma , i b =5ma 0.8 1.2 v gain bandwidth product f t v ce =5v,i e = -10ma 250 mhz output capacitance c ob v cb =5v,i e =0,f=1.0mhz 3 pf turn-on time t on v cc = 10v , v be(off) = -2.7v 0.13 ns storage time t stg i c = 50ma , 0.72 ns turn-off time t off i b1 =-i b2 = 1ma 1.22 ns *. pw 350s,duty cycle 2% h fe classification marking l17 l18 h fe 1000 2000 1600 3200 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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