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hexfet power mosfet notes through are on page 8 applications ? control mosfet for high frequency buck converters
pqfn 3.3 x 3.3 mm orderable part number form quantity IRFHM8334PBF pqfn 3.3mm x 3.3mm tape and reel 4000 irfhm8334trpbf base part number package type standard pack
3 2 1 8 7 6 5 4 d d d d s s s g v ds 30 v v gs max 20 v r ds(on) max (@v gs = 10v) 9.0 (@v gs = 4.5v) 13.5 q g typ. 7.1 nc i d (@t c ( bottom ) = 25c) 25 a m features benefits low thermal resistance to pcb (< 4.5c/w) enable better thermal dissipation low profile (<1.2mm) increased power density industry-standard pinout results in multi-vendor compatibility compatible with existin g surface mount techniques ? easier manufacturing rohs compliant, halo g en-free environmentall y friendlier msl1, consumer qualification increased reliability absolute maximum ratings parameter units v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v ( source bondin g technolo gy limited ) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bott om) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c -55 to + 150 2.7 0.021 28 max. 13 27 176 20 43 25

d s g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 4.5 r jc (top) junction-to-case ??? 44 c/w r ja junction-to-ambient ??? 47 r ja (<10s) junction-to-ambient ??? 30 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 21 ??? mv/c r ds ( on ) static drain-to-source on-resistance ??? 7.2 9.0 ??? 11.2 13.5 v gs ( th ) gate threshold voltage 1.35 1.8 2.35 v v ds = v gs , i d = 25a ? v gs ( th ) gate threshold voltage coefficient ??? -6.6 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 44 ??? ??? s q g total gate charge ??? 15 ??? nc q g total gate charge ??? 7.1 11 q g s1 pre-vth gate-to-source charge ??? 2.5 ??? q g s2 post-vth gate-to-source charge ??? 1.0 ??? q g d gate-to-drain charge ??? 2.3 ??? q g odr gate charge overdrive ??? 1.3 ??? q sw switch charge (q g s2 + q g d ) ??? 3.3 ??? q oss output charge ??? 5.7 ??? nc r g gate resistance ??? 1.2 ??? ? t d ( on ) turn-on delay time ??? 8.3 ??? t r rise time ??? 14 ??? t d ( off ) turn-off delay time ??? 7.0 ??? t f fall time ??? 4.6 ??? c iss input capacitance ??? 1180 ??? c oss output capacitance ??? 260 ??? c rs s reverse transfer capacitance ??? 110 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 13 20 ns q rr reverse recovery charge ??? 19 29 nc typ. r g =1.8 ? v ds = 10v, i d = 20a v ds = 24v, v gs = 0v, t j = 125c m ? i d = 20a i d = 20a ? = 1.0mhz v dd = 30v, v gs = 4.5v v gs = 0v t j = 25c, i f = 20a, v dd = 15v di/dt = 380 a/s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. v ds = 10v conditions max. 35 conditions v gs = 0v, i d = 250a reference to 25c, i d = 1.0ma v gs = 10v, i d = 20a v ds = 24v, v gs = 0v v ds = 16v, v gs = 0v v gs = 4.5v, i d = 16a v gs = 4.5v v gs = 10v, v ds = 15v, i d = 20a ??? ??? 176 ??? ??? 25 mosfet symbol na ns a pf nc v ds = 15v v gs = 20v v gs = -20v

fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 02468101214161820 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 20a

fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package

fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 5 10 15 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.3a 9.0a bottom 20a

fig 16. !"#$% for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period &
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starting t j = 25c, l = 0.18mh, r g = 50 ? , i as = 20a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf calculated continuous current based on maximum allowable junction temperature. current is limited to 25a by source bonding technology. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/
-/(0 #%*+#)# 0+/!! !+ *! ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. ms l 1 (per jedec j-s td-020d ??? ) rohs compliant yes pqfn 3.3mm x 3.3mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per jedec jesd47f ??? guidelines ) camber not e: 1. dimension measured on the bottom of the cavity. 2. pi tch tolerance over any 10 pi tches = 0.008 [0.2] 3. esd requirement: 0200volts 4. surface resistivity = 10 to 10 ohms per square i nch 5. roll should contai n splice-free material 6. engrave resy symbol every 100 sprockets (about 15.75 [400] ( conform suppl ier speci fi cation) ps the camber shall not exceed in 1mm/250

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