1 - 5 ? 2005 ixys all rights reserved 0526 ixys reserves the right to change limits, test conditions and dimensions. ixrh 40n120 v ces = 1200 v i c25 = 55 a v ce(sat) = 2.3 v typ. features ? igbt with npt (non punch through) structure reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage epoxy of to-247 package meets ul 94v-0 applications converters requiring reverse blocking capability: - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching in the main current path igbt symbol conditions maximum ratings v ces t vj = 25c to 150c 1200 v v ges 20 v i c25 t c = 25c 55 a i c90 t c = 90c 35 a i cm v ge = 0/15 v; r g = 22 ? ; t vj = 125c 80 a v cek rbsoa, clamped inductive load; l = 100 h 600 v p tot t c = 25c 300 w to-247 ad g c e g = gate, c = collector, e = emitter, tab = collector c (tab) igbt with reverse blocking capability ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ixys corporation 3540 bassett street, santa clara ca 95054 phone: (408) 982-0700, fax: 408-496-0670 symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 30 a; v ge = 15 v; t vj = 25c 2.3 2.7 v t vj = 125c 2.8 v v ge(th) i c = 2 ma; v ge = v ce 48v i ces v ce = v ces ; v ge = 0 v; t vj = 25c 50 a t vj = 125c 3.0 ma i ges v ce = 0 v; v ge = 20 v 500 na q gon v ce = 120v; v ge = 15 v; i c = 35 a 90 nc c e g
2 - 5 ? 2005 ixys all rights reserved 0526 ixys reserves the right to change limits, test conditions and dimensions. ixrh 40n120 to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc component symbol conditions maximum ratings t vj -55...+150 c t stg -55...+125 c m d mounting torque 0.8 - 1.2 nm f c mounting force with clip 20...120 n symbol conditions characteristic values min. typ. max. r thch with heatsink compound 0.25 k/w weight 6g igbt symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) typ. external diode dsep30-12 - diagram see fig. 17 t d(on) 31 ns t r 54 ns t d(off) 184 ns t f 24 ns e on 3.0 mj e off 0.7 mj internal diode - diagram see fig. 18 t d(on) 29.5 ns t r 47 ns t d(off) 183 ns t f 46 ns e on 19.2 mj e off 1.0 mj e rec int 7mj i rm i f = 35 a; di c /dt = -50 a/s; t vj = 125c 28.5 a t rr v ce = -600 v; v ge = 15 v 2.1 s r thjc 0.42 k/w inductive load, t vj = 125c v ce = 600 v; i c = 35 a v ge = 15 v; r g = 15 ? inductive load, t vj = 125c v ce = 600 v; i c = 35 a v ge = 15 v; r g = 15 ?
3 - 5 ? 2005 ixys all rights reserved 0526 ixys reserves the right to change limits, test conditions and dimensions. ixrh 40n120 t vj -50-25 0 255075100125150 v ce 0 1 2 3 4 5 v ce 02468 i c 0 10 20 30 40 50 60 70 02468 0 10 20 30 40 50 60 70 9 v t j = 25c v ge = 19 v t j = 125c 11 v v ge 5678910111213 0 10 20 30 40 50 60 70 80 90 9 v 17 v 15 v 13 v t j = 125c t j = 25c t j = -40c i c = 70 a i c = 35 a i c = 17.5 a v ge = 19 v 17 v 15 v 13 v 11 v v a i c a v ce v i c a v c v v ce = 20 v 0 10203040506070 0 3 6 9 12 15 0 70 140 210 280 350 0 10203040506070 0 1 2 3 0 80 160 240 e on t d(on) t r e off t d(off) t f i c a i c a e off e on t t mj ns ns mj v ce = 600 v v ge = 15 v r g = 15 ? t j = 125c v ce = 600 v v ge = 15 v r g = 15 ? t j = 125c v ge = 15 v fig. 1 typical output characteristics fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 typ. collector emitter saturation as a function of case temperature fig. 5 typ. turn on energy and switching times vs. collector current, inductive switching with ext. free wheeling diode (fig. 17) fig. 6 typ. turn off energy and switching times vs. collector current, inductive switching with ext. free wheeling diode (fig. 17)
4 - 5 ? 2005 ixys all rights reserved 0526 ixys reserves the right to change limits, test conditions and dimensions. ixrh 40n120 e on t d(on) t r e off t d(off) t f r g ? r g ? e on mj e off t ns t 0 20406080100 0 1 2 3 4 0 200 400 600 800 0 20406080100 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 0 20406080 0 1 2 3 0 300 600 900 e on t d(on) t r e off t d(off) t f r g r g e on mj e off t ns t v ce = 600 v v ge = 15 v i c = 35 a t j = 125c 0 20406080100 0 5 10 15 20 25 30 0 25 50 75 100 125 150 0 20406080 0 10 20 30 40 50 0 30 60 90 120 150 e on t d(on) t r i c a e on e recint t ns v ce = 600 v v ge = 15 v r g = 15 ? t j = 125c e rec int 0 20406080100 0 2 4 6 0 80 160 240 e off t d(off) t f i c a e off t ns mj v ce = 600 v v ge = 15 v r g = 15 ? t j = 125c ns mj v ce = 600 v v ge = 15 v i c = 35 a t j = 125c e recint v ce = 600 v v ge = 15 v i c = 35 a t j = 125c ns mj v ce = 600 v v ge = 15 v i c = 35 a t j = 125c mj ? ? fig. 7 typ. turn on energy and switching times vs. gate resistor, inductive switching with ext. free wheeling diode (fig. 17) fig. 8 typ. turn off energy and switching times vs. gate resistor, inductive switching with ext. free wheeling diode (fig. 17) fig. 9 typ. turn on energy and switching times vs. collector current, inductive switching with internal diode (fig. 18) fig. 10 typ. turn off energy and switching times vs. collector current, inductive switching with internal diode (fig. 18) fig. 11 typ. turn on energy and switching times vs. gate resistor, inductive switching with internal diode (fig. 18) fig. 12 typ. turn off energy and switching times vs. gate resistor, inductive switching with internal diode (fig. 18)
5 - 5 ? 2005 ixys all rights reserved 0526 ixys reserves the right to change limits, test conditions and dimensions. ixrh 40n120 fig. 13 typ. turn off characteristics of the internal diode fig. 14 typ. turn off characteristics of the internal diode fig. 15 typical gate charge fig. 16 typ. transient thermal impedance ri 0.034 0.048 0.092 0.174 0.075 0.0001 0.0035 0.02 0.142 0.18 i rm t rr di f /dt a/s i rm t a ns 0 100 200 300 400 500 20 30 40 50 60 900 1200 1500 1800 2100 2400 0 100 200 300 400 500 30 31 32 33 34 35 36 di f /dt q rr a/s q g 0.00 0.04 0.08 0.12 0.16 v ge 0 4 8 12 16 20 v ce = 120 v i c = 35 a v c 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 0.4 t s z thjc k/w 0.45 IXRH40N120 v ce = -600 v v ge = 15 v i c = 35 a t j = 125c v ce = -600 v v ge = 15 v t j = 125c c u u fig. 17 turn-on/turn-off with external diode (dsep 30-12) fig. 18 turn-on/turn-off with internal diode u d evice u nder t est current sensing gate resistor driver voltage source free wheeling diode inductance dut inductance current sensing current sensing +15 v driver voltage source igbt is on dut gate resistor
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