maximum ratings: (t a =25c) symbol n-ch (q1) p-ch (q2) units drain-source voltage v ds 20 v gate-source voltage v gs 8.0 v continuous drain current (steady state) i d 650 ma maximum pulsed drain current (tp=10s) i dm 1.3 1.0 a power dissipation (note 1) p d 350 mw power dissipation (note 2) p d 300 mw power dissipation (note 3) p d 150 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance (note 1) ja 357 c/w electrical characteristics: (t a =25c) n-ch (q1) p-ch (q2) symbol test conditions min typ max min typ max units i gssf , i gssr v gs =4.5v, v ds =0 - - 1.0 - - 10 a i dss v ds =16v, v gs =0 - - 100 - - 100 na bv dss v gs =0, i d =250a 20 - - 20 - - v v gs(th) v ds =v gs , i d =250a 0.5 - 1.1 0.5 - 1.0 v v sd v gs =0, i s =200ma - - 1.1 - - - v v sd v gs =0, i s =250ma - - - - - 1.1 v r ds(on) v gs =4.5v, i d =600ma - 0.14 0.23 - - - r ds(on) v gs =4.5v, i d =350ma - - - - 0.25 0.36 r ds(on) v gs =2.5v, i d =500ma - 0.2 0.275 - - - r ds(on) v gs =2.5v, i d =300ma - - - - 0.37 0.5 r ds(on) v gs =1.8v, i d =350ma - - 0.7 - - - r ds(on) v gs =1.8v, i d =150ma - - - - - 0.8 cmldm7585 surface mount silicon n-channel and p-channel enhancement-mode complementary mosfets description: the central semiconductor cmldm7585 consists of complementary n-channel and p-channel enhancement-mode silicon mosfets designed for high speed pulsed amplifier and driver applications. these mosfets offer very low r ds(on) and low threshold voltage. marking code: 87c features: ? esd protection up to 1800v (human body model) ? 350mw power pissipation ? very low r ds(on) ? low threshold voltage ? logic level compatible ? small, sot-563 surface mount package notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 4.0mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 4.0mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 1.4mm 2 applications: ? load/power switches ? power supply converter circuits ? battery powered portable devices sot-563 case r4 (5-june 2013) www.centralsemi.com
cmldm7585 surface mount silicon n-channel and p-channel enhancement-mode complementary mosfets sot-563 case - mechanical outline pin configuration lead code: 1) source q1 2) gate q1 3) drain q2 4) source q2 5) gate q2 6) drain q1 marking code: 87c electrical characteristics - continued: (t a =25c) n-ch (q1) p-ch (q2) symbol test conditions min typ min typ units g fs v ds =10v, i d =400ma 1.0 - - - s g fs v ds =10v, i d =200ma - - 0.2 - s c rss v ds =16v, v gs =0, f=1.0mhz - 18 - 25 pf c iss v ds =16v, v gs =0, f=1.0mhz - 100 - 100 pf c oss v ds =16v, v gs =0, f=1.0mhz - 16 - 21 pf q g(tot) v ds =10v, v gs =4.5v, i d =500ma - 1.58 - - nc q g(tot) v ds =10v, v gs =4.5v, i d =200ma - - - 1.2 nc q gs v ds =10v, v gs =4.5v, i d =500ma - 0.17 - - nc q gs v ds =10v, v gs =4.5v, i d =200ma - - - 0.24 nc q gd v ds =10v, v gs =4.5v, i d =500ma - 0.24 - - nc q gd v ds =10v, v gs =4.5v, i d =200ma - - - 0.36 nc t on v dd =10v, v gs =4.5v, i d =200ma, r g =10 - 10 - 38 ns t off v dd =10v, v gs =4.5v, i d =200ma, r g =10 - 25 - 48 ns www.centralsemi.com r4 (5-june 2013)
cmldm7585 surface mount silicon n-channel and p-channel enhancement-mode complementary mosfets n-channel typical electrical characteristics r4 (5-june 2013) www.centralsemi.com
cmldm7585 surface mount silicon n-channel and p-channel enhancement-mode complementary mosfets p-channel typical electrical characteristics r4 (5-june 2013) www.centralsemi.com
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