to ? 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors BC212 transistor (pnp) features z general purpose switch ing and amplification. maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -0.01ma,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-2ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-0.01ma,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -15 na collector cut-off current i ceo v ce =-30v,i b =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -15 na BC212 140 600 BC212b 140 400 dc current gain h fe v ce =-5v, i c =-2ma BC212c 350 600 collector-emitter saturation voltage v ce(sat) i c =-100ma,i b =-5ma -0.6 v base-emitter saturation voltage v be(sat) i c =-100ma,i b =-5ma -1.2 v base-emitter voltage v be v ce =-5v, i c =-2ma -0.72 v transition frequency f t v ce =-5v,i c =-10ma,f=100mhz 200 mhz collector output capacitance c ob v cb =-10v,i c =0, f=1mhz 6 pf symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.1 a p c collector power dissipation 0.35 w r ja thermal resistance from junction to ambient 357 /w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
