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| sod-523 unit: mm 0.77max 0.6 +0.1 -0.1 0.3 +0.05 -0.05 0.8 +0.05 -0.05 1.2 +0.1 -0.1 1.6 +0.1 -0.1 0.1 +0.05 -0.02 0.07max +- BAP63-02 features high speed switching for rf signals low diode capacitance low diode forward resistance very low series inductance. for applications up to 3 ghz. absolute maximum ratings ta = 25 parameter symbol min max unit continuous reverse voltage v r 50 v continuous forward current i f 100 ma total power dissipation t s 90 p tot 715 mw storage temperature t stg -65 +150 junction temperature t j -65 +150 thermal resistance from junction to soldering point r th j-s 85 k/w product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol conditions typ max unit forward voltage v f i f =50ma 0.95 1.1 v reverse leakage current i r v r = 35 v 10 na v r = 0; f = 1 mhz 0.36 v r = 1 v; f = 1 mhz 0.32 v r = 20v; f = 1 mhz 0.25 0.32 i f = 0.5 ma; f = 100 mhz; note 1 2.5 3.5 i f = 1 ma; f = 100 mhz; note 1 1.95 3 i f = 10 ma; f = 100 mhz; note 1 1.17 1.8 i f = 100 ma; f = 100 mhz; note 1 0.9 1.5 v r = 0; f = 900 mhz 15.6 v r = 0; f = 1800 mhz 10.3 v r = 0; f = 2450 mhz 8.3 v r = 0.5; f = 900 mhz 0.19 v r = 0.5; f = 1800 mhz 0.24 v r = 0.5; f = 2450 mhz 0.28 v r =1;f=900mhz 0.16 v r = 1; f = 1800 mhz 0.20 v r = 1; f = 2450 mhz 0.25 v r = 10; f = 900 mhz 0.10 v r = 10; f = 1800 mhz 0.16 v r = 10; f = 2450 mhz 0.20 v r = 100; f = 900 mhz 0.09 v r = 100; f = 1800 mhz 0.14 v r = 100; f = 2450 mhz 0.18 when switched from i f =10matoi r =6ma; r l = 100 ;measured at i r =3ma series inductance l s i f = 100 ma; f = 100 mhz 0.6 nh note 1. guaranteed on aql basis: inspection level s4, aql 1.0. db db db pf db db insertion loss insertion loss insertion loss |s21| 2 |s21| 2 |s21| 2 |s21| 2 |s21| 2 isolation insertion loss diode capacitance c d r d diode forward resistance s l charge carrier life time 310 marking marking k5 BAP63-02 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123 |
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