vishay siliconix dg2730 document number: 67786 s11-2396-rev. f, 05-dec-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 2 port, usb 2.0 high speed (480 mbps) switch, dpdt analog switch description the dg2730 is 2 port high speed analog switch optimized for usb 2.0 signal switching. t he dg2730 switch is configured in dpdt. it handles bidirectional signal flow, achieving a 900 mhz - 3 db bandwidth, and a port to port crosstalk and isolation at - 49 db. processed with high density su b micron cmos, the dg2730 provide low parasitic capacit ance. signals are routed with minimized phase distortion and attain a bit to bit skew is as low as 40 ps. the dg2730 is designed for a wide range of operating voltages, from 2.7 v to 4.3 v that can be driven directly from one cell li-ion battery. on-chip circuitry protects against conditions when either the d+/d- lines are shorted to the v bus at the usb port. additionally, logic control pins (s and oe ) can tolerate the presen ce of voltages that are above the supply power rail (v+). the control logic threshold is guaranteed to be (v ih = 1.3 v/min). latch up current is 300 ma, as per jesd78, and its esd tolerance exceeds 8 kv. packaged in ultra small miniqfn-10 (1.4 mm x 1.8 mm x 0.55 mm), it is ideal for portable high speed mix signal switching application. as a committed partner to the community and the environment, vishay siliconix manufactures this product with lead (pb)-free device termination. the miniqfn-10 package has a nickel-palladium-gold device termination and is represented by the lead (pb)-fr ee ?-e4? suffix to the ordering part number. the nickel-palladium-gold device terminations meet all jedec standards for reflow and msl rating. as a further sign of vishay siliconix's commitment, the dg2730 is fully rohs complaint. features ? halogen-free according to iec 61249-2-21 definition ? wide operation voltage range ? low on-resistance, 7 ? (typical at 3 v) ? low capacitance, c on = 5.8 pf (typical) ? 3 db high bandwidth: 900 mhz (typical) ? low bit to bit skew: 40 ps (typical) ? low power consumption ? low logic threshold: v ? power down protection: d+/d- pins can tolerate up to 5 v when v+ = 0 v ? logic (s and oe ) above v+ tolerance ? 8 kv esd protection (hbm) ? latch-up current 300 ma per jesd78 ? lead (pb)-free low profile miniqfn-10 (1.4 mm x 1.8 mm x 0.55 mm) ? compliant to rohs directive 2002/95/ec applications ? cellular phones ? portable media players ?pda ? digital camera ?gps ? notebook computer ? tv, monitor, and set top box functional block diagram and pin configuration top v ie w g n d v + s hsd2- oe hsd2+ d- hsd1- miniqfn-10l 3 5 4 pin 1: lo n g lead d+ hsd1+ 1 7 6 2 10 9 8 control 5x pin 1 de v ice marking: 5x for dg2730 x = date/lot tracea b ility code
www.vishay.com 2 document number: 67786 s11-2396-rev. f, 05-dec-11 vishay siliconix dg2730 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. signals on s, oe , d, hsd1, hsd2 exceeding v+ will be clamped by internal diodes. limit forw ard diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 2.6 mw/c above 70 c. ordering information temp. range package part number - 40 c to 85 c miniqfn-10 dg2730dn-T1-GE4 truth table oe (pin 8) s (pin 10) function 0 1 d+ = hsd1+ and d- = hsd1- 0 0 d+ = hsd2+ and d- = hsd2- 1 x disconnect pin descriptions pin name description oe bus switch enable s select input hsd1, hsd2, d data port absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter limit unit reference to gnd v+ - 0.3 to 6 v s, oe , d, hsd1, hsd2 a - 0.3 to (v+ + 0.3) current (any terminal except s, oe , d, hsd1, hsd2) 30 ma continuous current (s, oe , d, hsd1, hsd2) 250 peak current (pulsed at 1 ms, 10 % duty cycle) 500 storage temperature (d suffix) - 65 to 150 c power dissipation (packages) b miniqfn-10 c 208 mw esd (human body model) i/o to gnd 8 kv latch-up (current injection) 300 ma specifications (v+ = 3 v) parameter symbol test conditions otherwise unless specified temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v analog r ds(on) full 0 v+ v on-resistance r ds(on) v+ = 3 v, i d = 8 ma, v hsd1/2 = 0.4 v room 7 8 ? full 9 on-resistance match d ? r on v+ = 3 v, i d = 8 ma, v hsd1/2 = 0.4 v room 0.8 on-resistance resistance flatness d r on flatness v+ = 3 v, i d = 8 ma, v hsd1/2 = 0 v, 1 v room 2 switch off leakage current i (off) v+ = 4.3 v, v hsd1/2 = 0.3 v, 3 v, v d = 3 v, 0.3 v full - 100 100 na channel on leakage current i (on) v+ = 4.3 v, v hsd1/2 = 0.3 v, 4 v, v d = 4 v, 0.3 v full - 200 200 digital control input voltage high v inh v+ = 3 v to 3.6 v full 1.3 v v+ = 4.3 v full 1.5 input voltage low v inl v+ = 3 v to 4.3 v full 0.5 input capacitance c in full 6.5 pf input current i inl or i inh v in = 0 or v+ full - 1 1 a
document number: 67786 s11-2396-rev. f, 05-dec-11 www.vishay.com 3 vishay siliconix dg2730 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this datas heet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, not subjected to production test. e. v in = input voltage to perform proper function. f. crosstalk meas ured between channels. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (v+ = 3 v) parameter symbol test conditions otherwise unless specified temp. a limits - 40 c to 85 c unit min. b typ. c max. b dynamic characteristics break-before-make time e, d t bbm v+ = 3 v, v d1/2 = 1.5 v, r l = 50 ? , c l = 35 pf room 5 ns full s, oe turn-on time e, d t on room 30 full s, oe turn-off time e, d t off room 25 full charge injection d q inj c l = 1 nf, r gen = 0 ? , v gen = 0 v room 0.5 pc off-isolation d oirr v+ = 3 v to 3.6 v, r l = 50 ? , c l = 5 pf, f = 240 mhz - 30 db crosstalk d x talk - 45 bandwidth d bw v+ = 3 v to 3.6 v, r l = 50 ? , - 3 db 900 mhz d+/d- on capacitance c on v+ = 3.3 v, oe = 0 v, f = 240 mhz 5.8 pf d1n, d2n off capacitance c off v+ = oe = 3.3 v, f = 240 mhz 2.2 channel-to-channel skew d t sk(o) v+ = 3 v to 3.6 v, r l = 50 ? , c l = 5 pf 50 ps skew off opposite transitions of the same output d t sk(p) 20 total jitter d t j 200 power supply power supply range v+ 2.6 4.3 v power supply current i+ v in = 0 v, or v+ full 2 a
www.vishay.com 4 document number: 67786 s11-2396-rev. f, 05-dec-11 vishay siliconix dg2730 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) r on vs. v d and single supply voltage r on vs. analog voltage and temperature r on vs. analog voltage and temperature 4 6 8 10 12 14 16 1 8 20 22 24 26 2 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v d - analog v oltage ( v ) r o n - on-resistance ( ) v + = 4.3 v t = 25 c i s = 8 ma d1 v + = 3.0 v v + = 2.6 v v + = 3.3 v v + = 3.6 v v d - analog v oltage ( v ) r o n - on-resistance ( ) - 40 c 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 + 8 5 c + 25 c v + = 3.0 v i o n = 8 ma v d - analog v oltage ( v ) r o n - on-resistance ( ) 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 - 40 c + 8 5 c + 25 c v + = 3.6 v i o n = 8 ma r on vs. analog voltage and temperature r on vs. analog voltage and temperature r on vs. analog voltage and temperature v d - analog v oltage ( v ) r o n - on-resistance ( ) 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 + 8 5 c + 25 c - 40 c v + = 2.6 v i o n = 8 ma v d - analog v oltage ( v ) r o n - on-resistance ( ) 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 - 40 c + 8 5 c + 25 c v + = 3.3 v i o n = 8 ma v d - analog v oltage ( v ) r o n - on-resistance ( ) 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v + = 4.3 v i o n = 8 ma - 40 c + 8 5 c + 25 c
document number: 67786 s11-2396-rev. f, 05-dec-11 www.vishay.com 5 vishay siliconix dg2730 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) supply current vs. input switching frequency switching threshold vs. supply voltage off-isolation, v+ = 3.3 v inp u t s w itching freq u ency (hz) i+ - s u pply c u rrent (a) 10 100 1 k 10 k 100 k 1 m 10 m 10 ma 1 ma 100 a 10 a 1 a 100 na 10 na 1 na 100 pa v + = 2.6 v v + = 3.0 v v + = 3.3 v v + = 3.6 v v + = 4.3 v v + - s u pply v oltage ( v ) v t - s w itching threshold ( v ) 0.50 0.55 0.60 0.65 0.70 0.75 0. 8 0 0. 8 5 0.90 0.95 1.00 1.05 1.10 1.15 1.20 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5 v il v ih - 100 - 90 - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 freq u ency (mhz) off isolation (db) 1 10 100 1000 leakage current vs. temperature gain vs. frequency, v+ = 3.3 v crosstalk, v+ = 3.3 v temperat u re (c) leakage c u rrent (pa) 0.1 1 10 100 1000 10 000 - 60 - 40 - 20 0 20 40 60 8 0 100 120 140 v + = 4.3 v i d(off) i d(off) i d(o n ) - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 freq u ency (mhz) gain (db) 1 10 100 1000 10 000 freq u ency (mhz) crosstalk (db) 1 10 100 1000 - 100 - 90 - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0
www.vishay.com 6 document number: 67786 s11-2396-rev. f, 05-dec-11 vishay siliconix dg2730 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ hsd1 or hsd2 c l 35 pf d logic input r l 50 v out gnd v+ 50 % 0 v logic input switch output t on t off logic "1" = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output d r l r l r on 0.9 x v out t r 5 ns t f 5 ns v inh v inl = + < < ( ) s v out oe figure 2. break-before-make interval c l (includes fixture and stray capacitance) hsd2 v hsd1 hsd1 v hsd2 0 v logic input switch output v o hsd1 = hsd2 t r < 5 ns t f < 5 ns 90 % t d t d d v+ gnd v+ c l 35 pf v o r l 50 v inl v inh s oe figure 3. charge injection off on on in v out v out q = out x c l c l = 1 nf r gen v out d v in = 0 - v+ oe gnd v+ v+ in depends on switch configuration: input polarity determined by sense of switch. + hsd1 or hsd2 v gen s
document number: 67786 s11-2396-rev. f, 05-dec-11 www.vishay.com 7 vishay siliconix dg2730 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67786 . figure 4. off-isolation oe gnd hsd1 or hsd2 0 v, 2.4 v 10 nf d off isolation 20 log v d v hsd2 or hsd1 r l analyzer v+ v+ = s figure 5. channel off/on capacitance hsd1 or hsd2 f = 1 mhz oe d gnd 0 v, 2.4 v meter hp4192a impedance analyzer or e q uivalent 10 nf v+ v+ s
vishay siliconix package information document number: 74496 12-feb-07 www.vishay.com 1 mini qfn-10l case outline dim millimeters inches min. nam. max. min. nam. max. a 0.50 0.55 0.60 0.0197 0.0217 0.0236 a1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 ref 0.006 ref d 1.75 1.80 1.85 0.069 0.071 0.073 e 1.35 1.40 1.45 0.053 0.055 0.057 e 0.40 bsc 0.016 bsc l 0.35 0.40 0.45 0.014 0.016 0.018 l1 0.45 0.50 0.55 0.0177 0.0197 0.0217 ecn t-07039-rev. a, 12-feb-07 dwg: 5957
document number: 66554 www.vishay.com revision: 05-mar-10 1 pad pattern vishay siliconix recommended minimum pads for mini qfn 10l mounting footprint dimen s ion s in mm (inch) 10 x 0.225 (0.0089) 1 9 x 0.663 (0.0261) 0.200 (0.0079) 0.400 (0.0157) pitch 2.100 (0.0827) 1.700 (0.0669) 0.563 (0.0221)
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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